Abstract: A data journaling method in a solid state storage device, the method including: receiving a read request; determining whether updated data mapping for the read request is located in at least one of a volatile journal and a nonvolatile journal using a Bloom filter; searching the volatile journal if the updated data mapping for the request is located in the Bloom filter, and then, searching the nonvolatile journal if the updated data mapping for the request is not found in the volatile journal; and stopping the search when the updated data mapping is found.

Abstract: A memory system includes a table storing a plurality of entries, where each entry is associated with a different logical block address (LBA), a plurality of memory devices, channels, and ways, where each memory device is connected to one of the channels ways and to one of the ways, and a memory controller configured to receive an LBA and data from a host, execute a plurality of pseudo-random functions on the received LBA to generate a plurality of slot indexes, select one of the slot indexes, write the data to one of the memory devices identified by the selected one slot index, and update a corresponding one of the entries to include the selected one slot index.

Abstract: A data journaling method in a solid state storage device, the method including: receiving a read request; determining whether updated data mapping for the read request is located in at least one of a volatile journal and a nonvolatile journal using a Bloom filter; searching the volatile journal if the updated data mapping for the request is located in the Bloom filter, and then, searching the nonvolatile journal if the updated data mapping for the request is not found in the volatile journal; and stopping the search when the updated data mapping is found.

Abstract: A method of encrypting unencrypted digital content includes measuring an analog value associated with a physical property of interested cells of a memory array; digitizing the measured analog value to generate a response key; generating an encryption key based at least on the response key; encrypting the unencrypted digital content to generated encrypted digital content based on the encryption key; and storing the encrypted digital content.

Abstract: A memory system includes a table storing a plurality of entries, where each entry is associated with a different logical block address (LBA), a plurality of memory devices, channels, and ways, where each memory device is connected to one of the channels ways and to one of the ways, and a memory controller configured to receive an LBA and data from a host, execute a plurality of pseudo-random functions on the received LBA to generate a plurality of slot indexes, select one of the slot indexes, write the data to one of the memory devices identified by the selected one slot index, and update a corresponding one of the entries to include the selected one slot index.

Abstract: A method, executed by a processor of a mobile communication device, for authenticating a purchase transaction includes receiving a certificate from a purchase agent and authenticating the purchase transaction based upon a comparison outcome of the certificate and a Flash Physical Unclonable Function (F-PUF) of a nonvolatile memory device integrated within the mobile communication device.

Abstract: A method of encrypting unencrypted digital content includes measuring an analog value associated with a physical property of interested cells of a memory array; digitizing the measured analog value to generate a response key; generating an encryption key based at least on the response key; encrypting the unencrypted digital content to generated encrypted digital content based on the encryption key; and storing the encrypted digital content.

Abstract: A method generating a cryptographic key and corresponding helper data includes measuring an analog value associated with a physical property of cells of a memory array; digitizing the measured analog value to generate the cryptographic key; quantizing the measured analog value to generate the corresponding non-leaky helper data.

Abstract: A method generating a cryptographic key and corresponding helper data includes measuring an analog value associated with a physical property of cells of a memory array; digitizing the measured analog value to generate the cryptographic key; quantizing the measured analog value to generate the corresponding non-leaky helper data.

Abstract: A method of programming a non-volatile memory device includes; defining a set of verification voltages, setting a maximum verification voltage among verification voltages that are less than or equal to a first target programming voltage to be a target verification voltage, calculating a number of extra pulses based on the target verification voltage and the first target programming voltage, verifying whether a threshold voltage of the memory cell is equal to or greater than the target verification voltage by applying an incremental step pulse program (ISPP) pulse to the memory cell and then applying at least one verification voltage in the set of verification voltages to the memory cell, and further applying the ISPP pulse to the memory cell a number of times equal to the number of extra pulses when the threshold voltage is verified to be equal to or greater than the target verification voltage.

Abstract: A method of programming a non-volatile memory device includes; defining a set of verification voltages, setting a maximum verification voltage among verification voltages that are less than or equal to a first target programming voltage to be a target verification voltage, calculating a number of extra pulses based on the target verification voltage and the first target programming voltage, verifying whether a threshold voltage of the memory cell is equal to or greater than the target verification voltage by applying an incremental step pulse program (ISPP) pulse to the memory cell and then applying at least one verification voltage in the set of verification voltages to the memory cell, and further applying the ISPP pulse to the memory cell a number of times equal to the number of extra pulses when the threshold voltage is verified to be equal to or greater than the target verification voltage.