Abstract: An object of the present invention is to provide an emergency report system (1) that may detect that pressing of a phone call button (13) is continued based on a calling state retained even after pressing of the phone call button (13) is finished. The calling state is stored when the phone call button (13) of an interphone extension unit (8) is pressed inside a car (6). Storing of the calling state is retained even after pressing of the phone call button (13) is finished. Continuation of pressing of the phone call button (13) is detected by detecting storing of the calling state performed again, the storing being canceled at a time interval set in advance.

Abstract: A groove 34 having a generally U-shape cross section is formed in an N− type semiconductor layer 33 of an SOI substrate 30. A P− type well region 36 reaching a buried silicon oxide film 32 is formed in a surface layer on one side of the groove 34 and an N type well region 35 having substantially the same depth as that of the groove 34 is formed in the surface layer on the other side of the groove 34. A PN junction formed by the P− type well region 36 and the semiconductor layer 33 is formed in substantially coplanar with the side wall of the groove 34 on the side of the P− type well region 36. A P type base region 37 having substantially the same depth as that of the groove 34 and adjacent to the side wall of the groove 34 is formed in a surface layer of the P− type well region 36.

Abstract: A groove 34 having a generally U-shape cross section is formed in an N− type semiconductor layer 33 of an SOI substrate 30. A P− type well region 36 reaching a buried silicon oxide film 32 is formed in a surface layer on one side of the groove 34 and an N type well region 35 having substantially the same depth as that of the groove 34 is formed in the surface layer on the other side of the groove 34. A PN junction formed by the P− type well region 36 and the semiconductor layer 33 is formed in substantially coplanar with the side wall of the groove 34 on the side of the P− type well region 36. A P type base region 37 having substantially the same depth as that of the groove 34 and adjacent to the side wall of the groove 34 is formed in a surface layer of the P− type well region 36.