Patents by Inventor SHO NISHIDA
SHO NISHIDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250148612Abstract: [Object] Provided is a novel and improved technology capable of distinguishing the treatment of a predetermined object recognized from image data depending on the situation. [Solving Means] Provided is an information processing apparatus including an image recognition unit configured to recognize an object from image data, a motion detection unit configured to detect motion in sensing data acquired by a sensor, and an object detection unit configured to detect an object recognized as a predetermined object by the image recognition unit and corresponding to a region in which motion has been detected by the motion detection unit.Type: ApplicationFiled: January 6, 2023Publication date: May 8, 2025Applicants: Sony Semiconductor Solutions Corporation, Sony Group CorporationInventors: Yuji MATSUI, Sho NISHIDA
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Publication number: 20240431128Abstract: A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.Type: ApplicationFiled: September 4, 2024Publication date: December 26, 2024Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takushi SHIGETOSHI, Hideaki TOGASHI, Junpei YAMAMOTO, Shinpei FUKUOKA, Moe TAKEO, Sho NISHIDA
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Publication number: 20240394685Abstract: A terminal apparatus (20) according to an embodiment includes: a first ranging unit (203) including a light source unit (2110) and a light reception unit (2111) and configured to perform range-finding on a basis of light emitted from the light source unit and light received by the light reception unit, and a control unit (219) configured to control the first ranging unit, in which the control unit controls light emission from the light source unit included in the first ranging unit in response to transmission data to transmit the transmission data to another equipment using light and to cause the first ranging unit to execute the range-finding at least once before completing transmission of the transmission data.Type: ApplicationFiled: January 14, 2022Publication date: November 28, 2024Inventors: Kenta Endo, Mikio Ishimaru, Takao Tanikame, Sho Nishida, Nicholas Walker, Matthew Lawrenson, Harm Cronie
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Patent number: 12123744Abstract: A distance measuring device according to the present disclosure includes: a light-receiving section including a first light-receiving pixel and a second light-receiving pixel that are configured to detect light, and a light-shielded pixel that is light-shielded, the first light-receiving pixel, the light-shielded pixel, and the second light-receiving pixel being disposed in a first direction in this order; and a processor that is configured to measure a distance to a measurement object on the basis of a detection result in the first light-receiving pixel and a detection result in the second light-receiving pixel.Type: GrantFiled: February 12, 2020Date of Patent: October 22, 2024Assignee: SONY GROUP CORPORATIONInventors: Sho Nishida, Kenta Endo, Kei Nakagawa, Takao Tanikame
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Patent number: 12120897Abstract: A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.Type: GrantFiled: January 21, 2020Date of Patent: October 15, 2024Assignees: Sony Group Corporation, Sony Semiconductor Solutions CorporationInventors: Takushi Shigetoshi, Hideaki Togashi, Junpei Yamamoto, Shinpei Fukuoka, Moe Takeo, Sho Nishida
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Publication number: 20240332330Abstract: The present disclosure relates to a solid-state image-capturing element and electronic equipment that make it possible to attain more uniform sensitivity characteristics. The solid-state image-capturing element is configured such that it is provided with an on-chip lens for each 2×2 array of pixels in a same-color pixel group including pixels that receive light of the same color and that are arranged in a 4×4 array. Further, a sensitivity adjustment structure is configured by providing, on the light-incidence-surface side of a semiconductor substrate of predetermined pixels in the same-color pixel group, intra-pixel grooves with various shapes that are formed by digging shallower than an element separating portion for separating a photoelectric converting section in units of the pixels. For example, the present technology can be applied to a CMOS image sensor.Type: ApplicationFiled: March 24, 2022Publication date: October 3, 2024Inventors: SHUHEI KASUKAWA, SHO NISHIDA, MICHIKO SAKAMOTO
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Patent number: 12040340Abstract: Provided is an imaging element that includes a semiconductor substrate, a first photoelectric converter, a through electrode, a first dielectric film, and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter and penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate and has a first film thickness. The second dielectric film is provided on a side surface of the through hole and has a second film thickness. The second film thickness is less than the first film thickness.Type: GrantFiled: July 1, 2019Date of Patent: July 16, 2024Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideaki Togashi, Moe Takeo, Sho Nishida, Junpei Yamamoto, Shinpei Fukuoka, Takushi Shigetoshi
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Patent number: 12028612Abstract: An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.Type: GrantFiled: September 3, 2020Date of Patent: July 2, 2024Assignees: Sony Semiconductor Solutions Corporation, Sony Group CorporationInventors: Yusuke Murakawa, Hideaki Togashi, Yoshito Nagashima, Akira Furukawa, Yoshihiro Ando, Yasumasa Akutagawa, Taku Minoda, Hiroki Iwashita, Takahito Niwa, Sho Nishida, Mikio Ishimaru
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Patent number: 12002832Abstract: A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.Type: GrantFiled: July 23, 2019Date of Patent: June 4, 2024Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Shinpei Fukuoka, Moe Takeo, Sho Nishida, Hideaki Togashi, Takushi Shigetoshi, Junpei Yamamoto
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Publication number: 20220344390Abstract: To reduce a dark current of an image sensor including a photoelectric conversion unit disposed on a back surface of a semiconductor substrate. The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge.Type: ApplicationFiled: July 27, 2020Publication date: October 27, 2022Inventors: Akira FURUKAWA, Sho NISHIDA, Hideaki TOGASHI, Takushi SHIGETOSHI, Shinpei FUKUOKA, Junpei YAMAMOTO
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Publication number: 20220311943Abstract: An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.Type: ApplicationFiled: September 3, 2020Publication date: September 29, 2022Applicants: SONY SEMICONDUCTOR SOLUTIONS CORPORATION, SONY GROUP CORPORATIONInventors: Yusuke MURAKAWA, Hideaki TOGASHI, Yoshito NAGASHIMA, Akira FURUKAWA, Yoshihiro ANDO, Yasumasa AKUTAGAWA, Taku MINODA, Hiroki IWASHITA, Takahito NIWA, Sho NISHIDA, Mikio ISHIMARU
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Publication number: 20220136826Abstract: A distance measuring device according to the present disclosure includes: a light-receiving section including a first light-receiving pixel and a second light-receiving pixel that are configured to detect light, and a light-shielded pixel that is light-shielded, the first light-receiving pixel, the light-shielded pixel, and the second light-receiving pixel being disposed in a first direction in this order; and a processor that is configured to measure a distance to a measurement object on the basis of a detection result in the first light-receiving pixel and a detection result in the second light-receiving pixel.Type: ApplicationFiled: February 12, 2020Publication date: May 5, 2022Inventors: SHO NISHIDA, KENTA ENDO, KEI NAKAGAWA, TAKAO TANIKAME
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Publication number: 20220085110Abstract: A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.Type: ApplicationFiled: January 21, 2020Publication date: March 17, 2022Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takushi SHIGETOSHI, Hideaki TOGASHI, Junpei YAMAMOTO, Shinpei FUKUOKA, Moe TAKEO, Sho NISHIDA
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Publication number: 20210273006Abstract: An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate; a first photoelectric converter; a through electrode; a first dielectric film; and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter. The through electrode penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate. The first dielectric film has first film thickness. The second dielectric film is provided on a side surface of the through hole. The second dielectric film has second film thickness.Type: ApplicationFiled: July 1, 2019Publication date: September 2, 2021Inventors: HIDEAKI TAGASHI, MOE TAKEO, SHO NISHIDA, JUNPEI YAMAMOTO, SHINPEI FUKUOKA, TAKUSHI SHIGETOSHI
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Publication number: 20210273008Abstract: A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.Type: ApplicationFiled: July 23, 2019Publication date: September 2, 2021Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinpei FUKUOKA, Moe TAKEO, Sho NISHIDA, Hideaki TOGASHI, Takushi SHIGETOSHI, Junpei YAMAMOTO