Patents by Inventor Sho Oikawa
Sho Oikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11721595Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.Type: GrantFiled: January 8, 2020Date of Patent: August 8, 2023Assignee: Tokyo Electron LimitedInventors: Sho Oikawa, Seiji Yokoyama, Taichi Okano, Shunichi Kawasaki
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Patent number: 11610766Abstract: A target object processing method is provided for processing a target object using a plasma processing apparatus including a processing chamber, a mounting table which is disposed in the processing chamber and on which the target object is mounted, an outer peripheral member disposed around the mounting table, and a first voltage application device configured to apply a voltage to the outer peripheral member. The method comprises preparing the target object having an etching target film and a patterned mask formed on the etching target film, and processing the mask. The step of processing the mask includes supplying a first processing gas containing a first rare gas to the processing chamber, and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas while applying a DC voltage to the outer peripheral member.Type: GrantFiled: November 5, 2019Date of Patent: March 21, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Seiji Yokoyama, Taichi Okano, Sho Oikawa, Shunichi Kawasaki, Toshifumi Nagaiwa
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Patent number: 11328934Abstract: Provided is an etching method performed in a substrate-processing apparatus having: a first electrode on which a substrate is placed; and a second electrode facing the first electrode, the method comprising: a first step for introducing a first gas and halfway etching a target film into a pattern of a predetermined film on the target film formed on the substrate; a second step for introducing a second gas including Ar gas, H2 gas, and deposition gas and applying DC voltage to the second electrode to form a protective film, the second step being performed after the first step; and a third step for introducing a third gas and etching the target film, the third step being performed after the step for forming the protective film.Type: GrantFiled: June 24, 2019Date of Patent: May 10, 2022Assignee: Tokyo Electron LimitedInventors: Sho Oikawa, Wakako Ishida
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Patent number: 11211229Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.Type: GrantFiled: January 7, 2020Date of Patent: December 28, 2021Assignee: Tokyo Electron LimitedInventors: Sho Oikawa, Seiji Yokoyama, Taichi Okano, Shunichi Kawasaki
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Publication number: 20200411326Abstract: Provided is an etching method performed in a substrate-processing apparatus having: a first electrode on which a substrate is placed; and a second electrode facing the first electrode, the method comprising: a first step for introducing a first gas and halfway etching a target film into a pattern of a predetermined film on the target film formed on the substrate; a second step for introducing a second gas including Ar gas, H2 gas, and deposition gas and applying DC voltage to the second electrode to form a protective film, the second step being performed after the first step; and a third step for introducing a third gas and etching the target film, the third step being performed after the step for forming the protective film.Type: ApplicationFiled: June 24, 2019Publication date: December 31, 2020Inventors: Sho OIKAWA, Wakako ISHIDA
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Publication number: 20200227241Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.Type: ApplicationFiled: January 7, 2020Publication date: July 16, 2020Inventors: Sho OIKAWA, Seiji YOKOYAMA, Taichi OKANO, Shunichi KAWASAKI
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Publication number: 20200227326Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.Type: ApplicationFiled: January 8, 2020Publication date: July 16, 2020Inventors: Sho OIKAWA, Seiji YOKOYAMA, Taichi OKANO, Shunichi KAWASAKI
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Publication number: 20200168468Abstract: An etching method is provided. In the method, a substrate including an etching target film, a hard mask containing silicon and a patterned resist is provided. A protective film is formed on a surface of the substrate by generating a first plasma from one of a first gas containing carbon, fluorine and a dilute gas, and a second gas containing carbon, hydrogen and the dilute gas. The hard mask is etched by generating a second plasma from a third gas after performing the step of forming the protective film.Type: ApplicationFiled: November 25, 2019Publication date: May 28, 2020Inventors: Takayuki ISHII, Taichi OKANO, Sho OIKAWA
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Publication number: 20200144034Abstract: A target object processing method is provided for processing a target object using a plasma processing apparatus including a processing chamber, a mounting table which is disposed in the processing chamber and on which the target object is mounted, an outer peripheral member disposed around the mounting table, and a first voltage application device configured to apply a voltage to the outer peripheral member. The method comprises preparing the target object having an etching target film and a patterned mask formed on the etching target film, and processing the mask. The step of processing the mask includes supplying a first processing gas containing a first rare gas to the processing chamber, and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas while applying a DC voltage to the outer peripheral member.Type: ApplicationFiled: November 5, 2019Publication date: May 7, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Seiji Yokoyama, Taichi Okano, Sho Oikawa, Shunichi Kawasaki, Toshifumi Nagaiwa