Abstract: Decrease of the off-state current, increase of the on-state current, and reduction of variations of electrical characteristics. A method for manufacturing a channel-etched inversed staggered thin film transistor includes the following steps: removing, by first dry-etching, a part of a semiconductor layer including an impurity element which imparts one conductivity type, which is exposed from the source and drain electrodes, and partially a part of an amorphous semiconductor layer just below and in contact with the part of the semiconductor layer; removing, by second dry-etching, partially the part of the amorphous semiconductor layer which is exposed by the first dry-etching; and performing plasma treatment on the surface of the part of the amorphous semiconductor layer which is exposed by the second dry-etching so that an altered layer is formed.

Abstract: Decrease of the off-state current, increase of the on-state current, and reduction of variations of electrical characteristics. A method for manufacturing a channel-etched inversed staggered thin film transistor includes the following steps: removing, by first dry-etching, a part of a semiconductor layer including an impurity element which imparts one conductivity type, which is exposed from the source and drain electrodes, and partially a part of an amorphous semiconductor layer just below and in contact with the part of the semiconductor layer; removing, by second dry-etching, partially the part of the amorphous semiconductor layer which is exposed by the first dry-etching; and performing plasma treatment on the surface of the part of the amorphous semiconductor layer which is exposed by the second dry-etching so that an altered layer is formed.