Abstract: A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.

Abstract: The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.

Abstract: A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.

Abstract: An integrated circuit includes a first electrode including an inner portion and an outer portion laterally surrounding the inner portion. The outer portion has a greater resistivity than the inner portion. The integrated circuit includes a second electrode and resistivity changing material contacting the first electrode and coupled to the second electrode.

Abstract: An integrated circuit includes a first electrode, a second electrode, and dielectric material including an opening. The opening is defined by etching the dielectric material based on an oxidized polysilicon mask formed using a keyhole process. The integrated circuit includes resistivity changing material deposited in the opening and coupled between the first electrode and the second electrode.

Abstract: An integrated circuit includes a first electrode including an inner portion and an outer portion laterally surrounding the inner portion. The outer portion has a greater resistivity than the inner portion. The integrated circuit includes a second electrode and resistivity changing material contacting the first electrode and coupled to the second electrode.

Abstract: An integrated circuit includes a first electrode, a second electrode, and dielectric material including an opening. The opening is defined by etching the dielectric material based on an oxidized polysilicon mask formed using a keyhole process. The integrated circuit includes resistivity changing material deposited in the opening and coupled between the first electrode and the second electrode.

Abstract: An integrated circuit having an optical switch includes an optical body configured to transmit light, the optical body having a boundary, and a thin film disposed at the boundary that is configured to selectively change a pseudo-Brewster angle of light reflected at the boundary.

Abstract: The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.

Abstract: The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.

Abstract: A method of fabricating memory cells on a wafer includes forming cavities in a dielectric layer, where each of the cavities includes at least one corner. The method additionally includes depositing a memory cell material into the corner(s) of the cavities, and removing a portion of the memory cell material from the cavities such that an active portion of the memory cell material remains in the corner(s).

Abstract: A phase change memory cell includes a first spacer electrically coupled to a first electrode and to a second spacer. The first spacer includes a planar base contacting the first electrode and a wall extending from the planar base. The second spacer is electrically coupled between a second electrode and the wall of the first spacer. The phase change memory cell is formed at a boundary where the wall of the first spacer contacts the second spacer.

Abstract: A memory cell includes a first electrode, a second electrode, a layer of phase change material positioned between the first and second electrodes, and a stress layer contacting the layer of phase change material. The phase change material includes a high temperature state, and the stress layer defines an interface with the phase change material and operates to suppress a transition in the phase change material to the high temperature state.

Abstract: A semiconductor wafer includes a first dielectric layer, a second dielectric layer contacting the first dielectric layer, and a measurement area feature. The measurement area feature is laterally enclosed by the second dielectric layer. The measurement area feature is adapted to be used for determining a thickness of the first dielectric layer, and the measurement area feature includes a mixture of at least two materials.

Abstract: A method of forming features in a semiconductor is disclosed. The method includes providing a wafer substrate including a surface having a reflective region, and coating the surface with a photosensitive layer. The method additionally includes exposing the photosensitive layer. The method further includes controlling exposure intensity such that the photosensitive layer has an exposed area only in an area adjacent the reflective region.

Abstract: A system includes a non-contacting optical measurement instrument and a controller. The non-contacting optical measurement instrument is configured to obtain a measurement of a phase-change material. The controller is configured to determine a resistivity of the phase-change material based on the measurement.

Abstract: A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.

Abstract: A phase change memory cell is disclosed. The phase change memory cell includes a first thin film spacer and a second thin film spacer. The first thin film spacer defines a sub-lithographic dimension and is electrically coupled to a first electrode. The second thin film spacer defines a sub-lithographic dimension and is electrically coupled between a second electrode and the first thin film spacer. In this regard, the phase change memory cell is formed at a boundary where the first thin film spacer electrically contacts the second thin film spacer.

Abstract: The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.

Abstract: Disclosed is system and method for measuring small integrated circuit features without destroying the wafer. A preferred embodiment comprises measuring the deviation from the characteristic refractive index of a wafer surface as indicative of the size of the circuit features. The method further comprises irradiating a plurality of the features, detecting emanating radiation with respect to the features, determining therefrom an effective index of refraction of the film and the features, and analyzing the effective index of refraction to determine the size of the features. Analyzing the effective index of refraction comprises comparing the effective index of refraction to an index of refraction of a film having therein features of a nominal feature size and determining the deviation of feature size based upon the comparing step.