Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]: satisfying both of 500?(C1/W1) and 0.04?(C2/C1);??[A] satisfying both of 200?(C1/?(W1)) and 8?C2; and??[B] satisfying both of 500?(C1/W1) and 8?C2.

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

Abstract: [Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced.

Abstract: [Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced.

Abstract: To provide a wetting agent for semiconductors and a polishing composition whereby the wettability of a semiconductor substrate surface can be improved, and microdefects such as particle attachments can be remarkably reduced. A wetting agent for semiconductors, comprising a water soluble polymer compound having a low viscosity and water, and a polishing composition. A 0.3 wt % aqueous solution of the water soluble polymer compound has a viscosity of less than 10 mPa·s at 25° C.

Abstract: To provide a wetting agent for semiconductors and a polishing composition whereby the wettability of a semiconductor substrate surface can be improved, and microdefects such as particle attachments can be remarkably reduced. A wetting agent for semiconductors, comprising a water soluble polymer compound having a low viscosity and water, and a polishing composition. A 0.3 wt % aqueous solution of the water soluble polymer compound has a viscosity of less than 10 mPa·s at 25° C.