Abstract: A wiring substrate includes first conductor pads formed on a surface of an insulating layer, second conductor pads formed on the surface of the insulating layer, a second insulating layer covering the surface of the insulating layer and first and second conductor pads, first via conductors formed in first via holes penetrating through the second insulating layer such that the first via conductors are formed on the first conductor pads, and second via conductors formed in second via holes penetrating through the second insulating layer such that the second via conductors are formed on the second conductor pads. The first and second conductor pads are formed such that an annular width amount of each second conductor pad is smaller than an annular width amount of each first conductor pad and that a haloing amount in each second conductor pad is smaller than a haloing amount in each first conductor pad.

Abstract: A method for manufacturing a wiring substrate includes forming conductor pads on a surface of an insulating layer, positioning, on or in the insulating layer, an electronic component having electrode pads, forming a second insulating layer covering the surface of the insulating layer, conductor pads and electronic component, forming first via holes exposing the conductor pads, applying a first desmear treatment to the second insulating layer such that residues are removed from the first via holes, forming second via holes in the second insulating layer after the first desmear treatment such that the second via holes expose the electrode pads of the electronic component positioned on or in the insulating layer, applying a second desmear treatment to the second insulating layer such that residues are removed from the second via holes, forming first via conductors in the first via holes, and forming second via conductors in the second via holes.

Abstract: A substrate processing apparatus of processing a substrate by using a processing fluid in a supercritical state, the substrate processing apparatus includes: a processing container in which the substrate is accommodated; a supply line connecting the processing container to a fluid source configured to send out the processing fluid in the supercritical state; a discharge line configured to discharge the processing fluid from the processing container; a control valve interposed in the discharge line; and a controller configured to control a pressure in the processing container by adjusting an opening degree of the control valve. In a circulation process in which the processing fluid is supplied to the processing container from the supply line, the controller is configured to adjust the opening degree of the control valve such that each of a pressure-lowering step and a pressure-raising step.

Abstract: A substrate processing apparatus performs a drying process for drying a substrate with a liquid film formed on a pattern formation surface thereof, using a processing fluid in a supercritical state. The substrate processing apparatus includes a processing container, a holder, and a processing liquid supply. The processing container accommodates the substrate. The holder holds the substrate inside the processing container. The processing liquid supply supplies a processing fluid into the processing container. Further, the holder includes a base, a plurality of support members, and a lifting mechanism. The base is disposed below the substrate. The plurality of support members are provided on the base, and support the substrate from below. The lifting mechanism moves the plurality of support members up and down.

Abstract: A wiring substrate includes an insulating layer including inorganic filler particles and resin, and a conductor layer including a metal film formed on a surface of the insulating layer and having a conductor pattern. The inorganic filler particles include first inorganic filler particles such that each of the first inorganic filler particles has a portion exposed on the surface of the insulating layer and is at least partially separated from the resin, the conductor layer is formed such that a part of the metal film is between the first inorganic filler particles and the resin from the surface of the insulating layer and that a distance between the surface of the insulating layer and the surface of the insulating layer at a deepest part of the part of the metal film is in the range of 0.1 ?m to 0.5 ?m.

Abstract: A liquid supply device includes: a storage tank configured to store a processing liquid including a first processing liquid (sulfuric acid) and a second processing liquid (hydrogen peroxide solution); a circulation path having a first pipeline through which the processing liquid passes in a horizontal direction, and configured to circulate the processing liquid stored in the storage tank; a branch path configured to supply the processing liquid to a processing unit; and a branching part having an opening for allowing the processing liquid to flow out from the first pipeline to the branch path, wherein the opening is formed in the branching part and formed below a periphery of the first pipeline when the first pipeline is viewed in section.

Abstract: An apparatus includes: a tank storing a processing liquid; a circulation line; a branch line; a processing part for supplying the processing liquid to a substrate at the branch line; a discharge part for reducing a storage amount of the processing liquid; a supply part for supplying a new processing liquid to the tank; and a controller including: a first determination part for determining whether the storage amount is less than a lower limit value; a first replenishment controller for replenishing the processing liquid to the tank when the storage amount is less than the lower limit value; a calculation part for calculating a replenishment amount of the processing liquid; and a second replenishment controller for reducing the storage amount and replenishing the processing liquid to the tank when a calculation value of the replenishment amount is less than a set value.

Abstract: There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

Abstract: A method of removing particles of a substrate processing apparatus includes a pressure increasing process, a circulating process, and a particle removing process. In the pressure increasing process, a pressure in a processing space is increased by supplying a cleaned fluid from a first supply line to the processing space in a state where a second on-off valve and a third on-off valve are closed. In the circulating process, a processing fluid is supplied from a second supply line to the processing space and discharged from a discharge line by opening the second on-off valve and the third on-off valve after the pressure increasing process. In the particle removing process, a flow of the cleaned fluid is generated against the pressure of the processing space in the second supply line by opening and closing the second on-off valve during the pressure increasing process.

Abstract: In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a first processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a second processing liquid supply device 71.

Abstract: A liquid supply device includes: a storage tank configured to store a processing liquid including a first processing liquid (sulfuric acid) and a second processing liquid (hydrogen peroxide solution); a circulation path having a first pipeline through which the processing liquid passes in a horizontal direction, and configured to circulate the processing liquid stored in the storage tank; a branch path configured to supply the processing liquid to a processing unit; and a branching part having an opening for allowing the processing liquid to flow out from the first pipeline to the branch path, wherein the opening is formed in the branching part and formed below a periphery of the first pipeline when the first pipeline is viewed in section.

Abstract: There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

Abstract: A substrate processing apparatus performs a drying process for drying a substrate with a liquid film formed on a pattern formation surface thereof, using a processing fluid in a supercritical state. The substrate processing apparatus includes a processing container, a holder, and a processing liquid supply. The processing container accommodates the substrate. The holder holds the substrate inside the processing container. The processing liquid supply supplies a processing fluid into the processing container. Further, the holder includes a base, a plurality of support members, and a lifting mechanism. The base is disposed below the substrate. The plurality of support members are provided on the base, and support the substrate from below. The lifting mechanism moves the plurality of support members up and down.

Abstract: A method of removing particles of a substrate processing apparatus includes a pressure increasing process, a circulating process, and a particle removing process. In the pressure increasing process, a pressure in a processing space is increased by supplying a cleaned fluid from a first supply line to the processing space in a state where a second on-off valve and a third on-off valve are closed. In the circulating process, a processing fluid is supplied from a second supply line to the processing space and discharged from a discharge line by opening the second on-off valve and the third on-off valve after the pressure increasing process. In the particle removing process, a flow of the cleaned fluid is generated against the pressure of the processing space in the second supply line by opening and closing the second on-off valve during the pressure increasing process.

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.

Abstract: In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a processing liquid supply device 71.

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.