Patents by Inventor Shogo Inoue
Shogo Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240413806Abstract: An acoustic resonator includes a piezoelectric layer on a substrate and an interdigital electrode structure on the piezoelectric layer. The interdigital electrode structure includes a first bus bar, a second bus bar, a first set of electrode fingers, and a second set of electrode fingers. The first bus bar and the second bus bar extend parallel to one another along a length of the interdigital electrode structure. The first set of electrode fingers are coupled to the first bus bar and extend to a first apodization edge. The second set of electrode fingers are coupled to the second bus bar and extend to a second apodization edge. The first set of electrode fingers and the second set of electrode fingers are interleaved. At least one of the first apodization edge and the second apodization edge provides a wave pattern along the length of the interdigital electrode structure.Type: ApplicationFiled: August 22, 2024Publication date: December 12, 2024Inventors: Shogo Inoue, Hao Dong
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Patent number: 12107562Abstract: An acoustic resonator includes a piezoelectric layer on a substrate and an interdigital electrode structure on the piezoelectric layer. The interdigital electrode structure includes a first bus bar, a second bus bar, a first set of electrode fingers, and a second set of electrode fingers. The first bus bar and the second bus bar extend parallel to one another along a length of the interdigital electrode structure. The first set of electrode fingers are coupled to the first bus bar and extend to a first apodization edge. The second set of electrode fingers are coupled to the second bus bar and extend to a second apodization edge. The first set of electrode fingers and the second set of electrode fingers are interleaved. At least one of the first apodization edge and the second apodization edge provides a wave pattern along the length of the interdigital electrode structure.Type: GrantFiled: November 8, 2021Date of Patent: October 1, 2024Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Hao Dong
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Publication number: 20240313739Abstract: An acoustic wave device includes a piezoelectric layer and an interdigital electrode structure over the piezoelectric layer. The interdigital electrode structure includes a plurality of first electrode fingers extending from a first busbar towards a first apodization edge, and a plurality of second electrode fingers extending from a second busbar towards a second apodization edge. The plurality of first electrode fingers and the plurality of second electrode fingers are interleaved with one another. At least one of the first apodization edge or the second apodization edge follows a periodic arccosine apodization function over at least two adjacent electrode fingers. A number of periods of the first apodization edge or the second apodization edge is at least 2. A first distance between one of a first electrode finger or a second electrode finger and the respective periodic arccosine apodization function is less than or equal to a predetermined percentage of an apodization amplitude.Type: ApplicationFiled: March 6, 2024Publication date: September 19, 2024Inventor: Shogo Inoue
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Patent number: 12052011Abstract: The present disclosure relates to acoustic wave devices, and particularly to high quality factor (Q) transducers for surface acoustic wave (SAW) devices. An exemplary SAW device includes an interdigital transducer (IDT) between two reflective gratings to form a resonator. The resonator operates through shear horizontal mode acoustic waves, and therefore suppression of transverse modes (parallel to electrode fingers of the IDT) is desired. A piston mode can be formed in the resonator to suppress transverse modes, which may also increase energy leakage and result in a lower Q. A higher Q is achieved by adding a fast region at an end of one or more of the electrode fingers of the IDT.Type: GrantFiled: November 16, 2021Date of Patent: July 30, 2024Assignee: Qorvo US, Inc.Inventors: Marc Solal, Shogo Inoue
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Patent number: 11750170Abstract: A guided surface acoustic wave (SAW) device includes a substrate, a piezoelectric layer on the substrate, and a transducer on the piezoelectric layer. The substrate is silicon, and has a crystalline orientation defined by a first Euler angle (?), a second Euler angle (?), and a third Euler angle (?). The first Euler angle (?), the second Euler angle (?), and the third Euler angle (?) are chosen such that a velocity of wave propagation within the substrate is less than 6,000 m/s.Type: GrantFiled: November 19, 2020Date of Patent: September 5, 2023Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Marc Solal
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Patent number: 11742826Abstract: Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.Type: GrantFiled: November 19, 2021Date of Patent: August 29, 2023Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Marc Solal
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Patent number: 11716069Abstract: A device includes a die and an interdigital transducer on the die. The interdigital transducer includes a first bus bar, a second bus bar, and a number of electrode fingers. The first bus bar is parallel to the second bus bar. The electrode fingers are divided into a first set of electrode fingers and a second set of electrode fingers. The first set of electrode fingers extend obliquely from the first bus bar towards the second bus bar. The second set of electrode fingers extend obliquely from the second bus bar towards the first bus bar, and are parallel to and interleaved with the first set of electrode fingers. By providing the electrode fingers oblique to the bus bars, spurious transverse modes may be suppressed while maintaining the quality factor, electromechanical coupling coefficient, and capacitance of the device.Type: GrantFiled: August 17, 2021Date of Patent: August 1, 2023Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Marc Solal
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Publication number: 20220352862Abstract: A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.Type: ApplicationFiled: July 5, 2022Publication date: November 3, 2022Inventors: Shogo Inoue, Marc Solal, Robert Aigner
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Patent number: 11451206Abstract: A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.Type: GrantFiled: July 10, 2019Date of Patent: September 20, 2022Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Marc Solal, Robert Aigner
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Patent number: 11399001Abstract: A controller that controls a machine detects an event that has occurred in the controller or the machine to compose and store event information that contains the event. Upon receiving an e-mail acquisition request from a terminal, the controller retrieves the stored event information, composes an e-mail that contains the event information, and transmits the e-mail directly to the terminal.Type: GrantFiled: January 15, 2014Date of Patent: July 26, 2022Assignee: FANUC CORPORATIONInventor: Shogo Inoue
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Publication number: 20220149813Abstract: The present disclosure relates to acoustic wave devices, and particularly to high quality factor (Q) transducers for surface acoustic wave (SAW) devices. An exemplary SAW device includes an interdigital transducer (IDT) between two reflective gratings to form a resonator. The resonator operates through shear horizontal mode acoustic waves, and therefore suppression of transverse modes (parallel to electrode fingers of the IDT) is desired. A piston mode can be formed in the resonator to suppress transverse modes, which may also increase energy leakage and result in a lower Q. A higher Q is achieved by adding a fast region at an end of one or more of the electrode fingers of the IDT.Type: ApplicationFiled: November 16, 2021Publication date: May 12, 2022Inventors: Marc Solal, Shogo Inoue
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Publication number: 20220140808Abstract: An acoustic resonator includes a piezoelectric layer on a substrate and an interdigital electrode structure on the piezoelectric layer. The interdigital electrode structure includes a first bus bar, a second bus bar, a first set of electrode fingers, and a second set of electrode fingers. The first bus bar and the second bus bar extend parallel to one another along a length of the interdigital electrode structure. The first set of electrode fingers are coupled to the first bus bar and extend to a first apodization edge. The second set of electrode fingers are coupled to the second bus bar and extend to a second apodization edge. The first set of electrode fingers and the second set of electrode fingers are interleaved. At least one of the first apodization edge and the second apodization edge provides a wave pattern along the length of the interdigital electrode structure.Type: ApplicationFiled: November 8, 2021Publication date: May 5, 2022Inventors: Shogo Inoue, Hao Dong
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Patent number: 11309861Abstract: Embodiments of a Surface Acoustic Wave (SAW) device having a guided SAW structure that provides spurious mode suppression and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a non-semiconductor support substrate, a piezoelectric layer on a surface of the non-semiconductor support substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the non-semiconductor support substrate. A thickness of the piezoelectric layer, a SAW velocity of the piezoelectric layer, and an acoustic velocity of the non-semiconductor support substrate are such that a frequency of spurious modes above a resonance frequency of the SAW device is above a bulk wave cut-off frequency of the SAW device. In this manner, the spurious modes above the resonance frequency of the SAW device are suppressed.Type: GrantFiled: September 13, 2018Date of Patent: April 19, 2022Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Marc Solal
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Patent number: 11273740Abstract: By promoting air circulation, heat and humidity are reduced more efficiently. A vehicle seat ventilation mechanism includes: a body case which is provided in a cushioning material of at least one of a seat cushion and a seat back and whose interior is an air circulation space; a fan disposed in the body case; and an exhaust port which is provided at a position apart from the fan and discharges an air stream created by air suction by the fan. The air stream enhances the comfort of a microclimate condition on a vehicle seat side which is a rear side of a contact surface, and with this microclimate condition, a thermal environment on a seat occupant side having an increased causal factor of discomfort is replaced, thereby making it possible to enhance the comfort of the clothing microclimate.Type: GrantFiled: January 25, 2019Date of Patent: March 15, 2022Assignee: DELTA KOGYO CO., LTD.Inventors: Etsunori Fujita, Yumi Ogura, Tatsuya Motoie, Atsushi Nishida, Naoki Tsukamoto, Yoshika Nobuhiro, Shogo Inoue
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Publication number: 20220077838Abstract: Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.Type: ApplicationFiled: November 19, 2021Publication date: March 10, 2022Inventors: Shogo Inoue, Marc Solal
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Patent number: 11206007Abstract: Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.Type: GrantFiled: July 17, 2018Date of Patent: December 21, 2021Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Marc Solal
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Publication number: 20210376813Abstract: A device includes a die and an interdigital transducer on the die. The interdigital transducer includes a first bus bar, a second bus bar, and a number of electrode fingers. The first bus bar is parallel to the second bus bar. The electrode fingers are divided into a first set of electrode fingers and a second set of electrode fingers. The first set of electrode fingers extend obliquely from the first bus bar towards the second bus bar. The second set of electrode fingers extend obliquely from the second bus bar towards the first bus bar, and are parallel to and interleaved with the first set of electrode fingers. By providing the electrode fingers oblique to the bus bars, spurious transverse modes may be suppressed while maintaining the quality factor, electromechanical coupling coefficient, and capacitance of the device.Type: ApplicationFiled: August 17, 2021Publication date: December 2, 2021Inventors: Shogo Inoue, Marc Solal
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Patent number: 11177791Abstract: The present disclosure relates to acoustic wave devices, and particularly to high quality factor (Q) transducers for surface acoustic wave (SAW) devices. An exemplary SAW device includes an interdigital transducer (IDT) between two reflective gratings to form a resonator. The resonator operates through shear horizontal mode acoustic waves, and therefore suppression of transverse modes (parallel to electrode fingers of the IDT) is desired. A piston mode can be formed in the resonator to suppress transverse modes, which may also increase energy leakage and result in a lower Q. A higher Q is achieved by adding a fast region at an end of one or more of the electrode fingers of the IDT.Type: GrantFiled: February 1, 2019Date of Patent: November 16, 2021Assignee: Qorvo US, Inc.Inventors: Marc Solal, Shogo Inoue
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Patent number: 11171627Abstract: An acoustic resonator includes a piezoelectric layer on a substrate and an interdigital electrode structure on the piezoelectric layer. The interdigital electrode structure includes a first bus bar, a second bus bar, a first set of electrode fingers, and a second set of electrode fingers. The first bus bar and the second bus bar extend parallel to one another along a length of the interdigital electrode structure. The first set of electrode fingers are coupled to the first bus bar and extend to a first apodization edge. The second set of electrode fingers are coupled to the second bus bar and extend to a second apodization edge. The first set of electrode fingers and the second set of electrode fingers are interleaved. At least one of the first apodization edge and the second apodization edge provides a wave pattern along the length of the interdigital electrode structure.Type: GrantFiled: May 1, 2019Date of Patent: November 9, 2021Assignee: Qorvo US, Inc.Inventors: Shogo Inoue, Hao Dong
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Publication number: 20210291707Abstract: Provided is a seat cover whose attachment work is easy and that can be manufactured at a low cost even if a material having excellent durability is used. The seat cover (1) of the present invention has a cushion cover part (10) and a back cover part (20), and since an upper portion (22) of the back cover part (20) is located at a position within a range from a pelvis top corresponding part to a chest middle corresponding part, the height range that it covers in a seat back part is shorter than that of a conventional seat cover that covers a range up to the vicinity of the bottom of a headrest. This can make the amount of a material used for forming the back cover part (20) smaller than conventionally to reduce a cost increase even if a more expensive material having high durability against friction is used.Type: ApplicationFiled: August 5, 2019Publication date: September 23, 2021Applicant: DELTA KOGYO CO., LTD.Inventors: Etsunori FUJITA, Takashi KURASHITA, Shogo INOUE, Naoki OCHIAI