Patents by Inventor Shogo Ishizuka
Shogo Ishizuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9496433Abstract: The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.Type: GrantFiled: October 10, 2013Date of Patent: November 15, 2016Assignees: ROHM CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Takuji Maekawa, Shigeru Niki, Shogo Ishizuka, Hajime Shibata
-
Patent number: 9202962Abstract: A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.Type: GrantFiled: October 4, 2012Date of Patent: December 1, 2015Assignees: Rohm Co., Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Osamu Matsushima, Masaki Takaoka, Kenichi Miyazaki, Shogo Ishizuka, Keiichiro Sakurai, Shigeru Niki
-
Publication number: 20150303330Abstract: The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.Type: ApplicationFiled: October 10, 2013Publication date: October 22, 2015Applicants: ROHM CO., LTD., National Institute of Advanced Industrial science and TechnologyInventors: Takuji MAEKAWA, Shigeru NIKI, Shogo ISHIZUKA, Hajime SHIBATA
-
Patent number: 8921691Abstract: There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer.Type: GrantFiled: March 19, 2009Date of Patent: December 30, 2014Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Shogo Ishizuka, Shigeru Niki, Nobuaki Kido, Hiroyuki Honmoto
-
Patent number: 8895463Abstract: A glass substrate for a CIGS solar cell, having high cell efficiency and high glass transition temperature is provided. The glass substrate for a vapor-deposited CIGS film solar cell has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10?7 to 100×10?7/° C., wherein the ratio of the average total amount of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35, and the ratio of the average Na amount within from 10 to 40 nm in depth from the surface of the glass substrate after heat treatment to such average Na amount before the heat treatment is at least 1.5.Type: GrantFiled: January 28, 2013Date of Patent: November 25, 2014Assignee: Asahi Glass Company, LimitedInventors: Yutaka Kuroiwa, Yuichi Yamamoto, Tomomi Abe, Tetsuya Nakashima, Yasushi Kawamoto, Shigeru Niki, Shogo Ishizuka
-
Patent number: 8592933Abstract: A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic.Type: GrantFiled: March 30, 2009Date of Patent: November 26, 2013Assignees: Rohm Co., Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Kenichi Miyazaki, Osamu Matsushima, Shigeru Niki, Keiichiro Sakurai, Shogo Ishizuka
-
Patent number: 8304804Abstract: An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x<y and a relationship of x<z. For instance, such values as x=0.1, y=0.15 and z=0.16 can be chosen. Otherwise, such values as x=0.15, y=0.25 and z=0.24 can be choose as well. In this case, by increasing the value x of the active layer, it is possible to shift its light emission wavelength to the shorter wavelength side. In addition, as shown in the above-described results, by increasing the value x, it is possible to enhance its light emission efficiency.Type: GrantFiled: May 13, 2008Date of Patent: November 6, 2012Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Hajime Shibata, Hitoshi Tampo, Koji Matsubara, Akimasa Yamada, Keiichiro Sakurai, Shogo Ishizuka, Shigeru Niki
-
Patent number: 8299510Abstract: A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided. A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.Type: GrantFiled: February 1, 2008Date of Patent: October 30, 2012Assignees: Rohm Co., Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Osamu Matsushima, Masaki Takaoka, Kenichi Miyazaki, Shogo Ishizuka, Keiichiro Sakurai, Shigeru Niki
-
Publication number: 20120199203Abstract: Provided are a glass sheet for a CIGS solar cell which satisfies both of high power generation efficiency and high glass transition temperature, and a CIGS solar cell having high power generation efficiency. A glass sheet for a Cu—In—Ga—Se solar cell containing, in terms of mol % on the basis of the following oxides, 60 to 75% of SiO2, 3 to 10% of Al2O3, 0 to 3% of B2O3, 5 to 18% of MgO, 0 to 5% of CaO, 4 to 18.5% of Na2O, 0 to 17% of K2O, and 0% or more and less than 10% of SrO+BaO+ZrO2, wherein K2O/(Na2O+K2O) is 0 to 0.5, and the glass sheet has a glass transition temperature (Tg) of more than 550° C.Type: ApplicationFiled: April 18, 2012Publication date: August 9, 2012Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Manabu Nishizawa, Yuichi Kuroki, Tatsuo Nagashima, Yasushi Kawamoto, Shigeru Niki, Shogo Ishizuka
-
Patent number: 8012546Abstract: A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.Type: GrantFiled: August 23, 2007Date of Patent: September 6, 2011Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Shogo Ishizuka, Shigeru Niki, Keiichiro Sakurai, Akimasa Yamada, Koji Matsubara
-
Publication number: 20110024859Abstract: A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic.Type: ApplicationFiled: March 30, 2009Publication date: February 3, 2011Applicant: Rohm Co., LtdInventors: Kenichi Miyazaki, Osamu Matsushima, Shigeru Niki, Keiichiro Sakurai, Shogo Ishizuka
-
Publication number: 20110023963Abstract: There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer.Type: ApplicationFiled: March 19, 2009Publication date: February 3, 2011Inventors: Shogo Ishizuka, Shigeru Niki, Nobuaki Kido, Hiroyuki Honmoto
-
Publication number: 20100163864Abstract: An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x<y and a relationship of x<z. For instance, such values as x=0.1, y=0.15 and z=0.16 can be chosen. Otherwise, such values as x=0.15, y=0.25 and z=0.24 can be choose as well. In this case, by increasing the value x of the active layer, it is possible to shift its light emission wavelength to the shorter wavelength side. In addition, as shown in the above-described results, by increasing the value x, it is possible to enhance its light emission efficiency.Type: ApplicationFiled: May 13, 2008Publication date: July 1, 2010Inventors: Hajime Shibata, Hitoshi Tampo, Koji Matsubara, Akimasa Yamada, Keiichiro Sakurai, Shogo Ishizuka, Shigeru Niki
-
Publication number: 20100102368Abstract: A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided. A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).Type: ApplicationFiled: February 1, 2008Publication date: April 29, 2010Inventors: Osamu Matsushima, Masaki Takaoka, Kenichi Miyazaki, Shogo Ishizuka, Keiichiro Sakurai, Shigeru Niki
-
Publication number: 20090301558Abstract: A photoelectric converter includes a lower electrode layer, a compound semiconductor thin film of a chalcopyrite structure functioning as a photoabsorption layer and a light transmitting electrode layer that are sequentially laminated on a substrate. An end portion of the of compound semiconductor thin film is positioned outward beyond an end of the light transmitting electrode layer.Type: ApplicationFiled: October 31, 2006Publication date: December 10, 2009Applicant: Rohm Co LtdInventors: Masaki Takaoka, Osamu Matsushima, Shogo Ishizuka, Shigeru Niki, Keiichiro Sakurai
-
Publication number: 20090217969Abstract: Disclosed is a method for manufacturing a photoelectric converter wherein a lower electrode layer, a compound semiconductor thin film having a chalcopyrite structure which serves as a light absorptive layer and a light-transmitting electrode layer that are laminated to form layers are each patterned by photolithography, thereby minimizing damages to the crystals of the compound semiconductor thin film.Type: ApplicationFiled: October 31, 2006Publication date: September 3, 2009Applicant: ROHM CO., LTD.Inventors: Osamu Matsushima, Masaki Takaoka, Shogo Ishizuka, Shigeru Niki, Keiichiro Sakurai
-
Publication number: 20080072962Abstract: A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.Type: ApplicationFiled: August 23, 2007Publication date: March 27, 2008Inventors: Shogo ISHIZUKA, Shigeru NIKI, Keiichiro SAKURAI, Akimasa YAMADA, Koji MATSUBARA
-
Publication number: 20050284518Abstract: A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.Type: ApplicationFiled: June 23, 2005Publication date: December 29, 2005Inventors: Akimasa Yamada, Hitoshi Tampo, Koji Matsubara, Shigeru Niki, Keiichiro Sakurai, Shogo Ishizuka, Kakuya Iwata