Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

Abstract: A reverse bias voltage is applied to a photodiode array provided with a plurality of avalanche photodiodes operated in Geiger mode and with quenching resistors connected in series to the respective avalanche photodiodes. Electric current is measured with change of the reverse bias voltage applied, and the reverse bias voltage at an inflection point in change of electric current measured is determined as a reference voltage. A voltage obtained by adding a predetermined value to the determined reference voltage is determined as a recommended operating voltage.

Abstract: A reverse bias voltage is applied to a photodiode array provided with a plurality of avalanche photodiodes operated in Geiger mode and with quenching resistors connected in series to the respective avalanche photodiodes. Electric current is measured with change of the reverse bias voltage applied, and the reverse bias voltage at an inflection point in change of electric current measured is determined as a reference voltage. A voltage obtained by adding a predetermined value to the determined reference voltage is determined as a recommended operating voltage.