Abstract: A display is provided with: a substrate; a plurality of parallel scan wires extending over the substrate in a first direction; a plurality of parallel data wires extending parallel to a surface of the substrate in a second direction perpendicular to the first direction; at least one switching element per intersection between the scan wires and the data wires; pixel electrodes connected to the switching elements; at least one phosphor layer provided above the pixel electrodes; and common electrodes provided above the phosphor layer, and the phosphor layer has a polycrystalline structure made of a first semiconductor material and a second semiconductor material segregated between grain boundaries in the polycrystalline structure, which is different from the first semiconductor material.

Abstract: A linear light-emitting device is provided with a pair of first and second linear electrodes opposing each other, and a linear phosphor layer is sandwiched between the paired electrodes, with at least one of the paired first and second electrodes being a transparent electrode, and the phosphor layer has a polycrystalline structure made from a first semiconductor substance, with a second semiconductor substance different from the first semiconductor substance being segregated on a grain boundary of the polycrystalline structure.

Abstract: A light emitting device having a straight-line shape is provided with: a pair of first and second electrodes each having a straight-line shape which face each other; and a phosphor layer having a straight-line shape provided so as to be sandwiched between the pair of electrodes, wherein at least one of the pair of first and second electrodes is a transparent electrode, at least one buffer layer is provided so as to be sandwiched between the first or second electrode and the phosphor layer, and the buffer layer makes the height of a potential barrier between the electrode and the phosphor layer which sandwich the buffer layer lower than the height of a Schottky barrier when the electrode and the phosphor layer are brought into direct contact.

Abstract: An electroluminescent device having a phosphor layer including a phosphor material and a pair of electrodes for applying a voltage to the foregoing phosphor layer wherein an acetylacetonato complex salt is included in the phosphor layer to realize an electroluminescent device with high luminance. Further, the EL device realizes an electroluminescent device with higher luminance by constructing the foregoing phosphor layer so as to contain acetylacetonato complex salt, in which ligands coordinate with a trivalent metal atom, particularly a metal atom of Group III or Group XIII as the foregoing acetylacetonato complex salt.

Abstract: A display device is provided with a pair of a first electrode and a second electrode, at least one electrode of the first and second electrodes being transparent or translucent and a phosphor layer provided as being sandwiched between the first electrode and the second electrode, and at least one buffer layer provided as being sandwiched between the first or second electrode and the phosphor layer, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions, and wherein the buffer layer is sandwiched between the first or second electrode and the phosphor layer so that the size of an electric potential barrier between the first or second electrode and the phosphor layer via the buffer layer is made smaller than the size of a Schottky barrier between the first or second electrode and the phosphor layer that are directly made contact with each other without the buffe

Abstract: The phosphor element includes a pair of electrodes facing each other and a phosphor layer containing phosphor particles, the phosphor layer being supported between the pair of electrodes. The phosphor particles include a first semiconductor part and a second semiconductor part which covers at least a part of the surface of the first semiconductor part.

Abstract: A light emitting device having a straight-line shape is provided with: a pair of first and second electrodes each having a straight-line shape which face each other; and a phosphor layer having a straight-line shape provided so as to be sandwiched between the pair of electrodes, wherein at least one of the pair of first and second electrodes is a transparent electrode, at least one buffer layer is provided so as to be sandwiched between the first or second electrode and the phosphor layer, and the buffer layer makes the height of a potential barrier between the electrode and the phosphor layer which sandwich the buffer layer lower than the height of a Schottky barrier when the electrode and the phosphor layer are brought into direct contact.

Abstract: This light emitting device includes a pair of electrodes at least one of which is transparent or translucent, and a phosphor layer that is sandwiched between the electrodes and has a polycrystalline structure made of a first semiconductor material, and in this structure, a second semiconductor material different from the first semiconductor material is segregated on a grain boundary of the polycrystalline structure. The first semiconductor material and the second semiconductor material preferably have semiconductor structures of conduction types that are different from each other. Moreover, the first semiconductor material preferably has an n-type semiconductor structure, and the second semiconductor material preferably has a p-type semiconductor structure. Furthermore, in the case where the first semiconductor material is a zinc-based material containing zinc, at least one of the paired electrodes is preferably made of a material containing zinc.

Abstract: The electroluminescent element includes a first electrode, a first dielectric layer formed on the first electrode, a second dielectric layer formed opposed to the first dielectric layer, a second electrode formed on the second dielectric layer, a phosphor layer sandwiched between the first dielectric layer and the second dielectric layer, and a photoelectric conversion layer that generates electron-hole pairs by light from the phosphor layer, the photoelectric conversion layer being sandwiched between the first dielectric layer and the second dielectric layer. At least one of the first electrode and the second electrode is transparent or translucent.

Abstract: There is provided a display device: a display unit including a plurality of scan electrodes arranged to extend in parallel to each other along a first direction, a plurality of data electrodes arranged to extend in parallel to each other along a second direction crossing the scan electrodes, and a plurality of pixels, each pixel at which a pair of the scan electrode and the data electrode cross each other, each pixel having a light emitting layer and a dielectric layer interposed between the scan electrode and the data electrode from a direction vertical to a face; and an erasing pulse supplying unit operable to supply attenuation voltage pulse, to the light emitting layer of each pixel, which starts at a voltage not more than an emission starting voltage at which the light emitting layer starts emission and in which polarity is alternately reversed between positive and negative.

Abstract: A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particles, and wherein the nitride semiconductor particles have metal nano structures precipitated in grain boundaries between the nitride semiconductor particles.

Abstract: A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron

Abstract: An electroluminescent device having a phosphor layer including a phosphor material and a pair of electrodes for applying a voltage to the foregoing phosphor layer wherein an acetylacetonato complex salt is included in the phosphor layer to realize an electroluminescent device with high luminance. Further, the EL device realizes an electroluminescent device with higher luminance by constructing the foregoing phosphor layer so as to contain acetylacetonato complex salt, in which ligands coordinate with a trivalent metal atom, particularly a metal atom of Group III or Group XIII as the foregoing acetylacetonato complex salt.

Abstract: A light-emitting element is provided with: a pair of plate electrodes at least one of which is transparent or translucent; a light-emitting layer containing an inorganic phosphor, which is sandwiched between the electrodes; and at least one layer of a dielectric layer made from a ferroelectric polymer material, which is sandwiched between the electrodes in addition to the light-emitting layer.

Abstract: The phosphor element includes a pair of electrodes facing each other and a phosphor layer containing phosphor particles, the phosphor layer being supported between the pair of electrodes. The phosphor particles include a first semiconductor part and a second semiconductor part which covers at least a part of the surface of the first semiconductor part.

Abstract: A light-emitting device having first electrodes, a dielectric layer, a phosphor layer, and second electrodes layered sequentially on a substrate, the dielectric layer is made from a dielectric composed of a crystalline material with a perovskite structure where the lattice constant of the c-axis is greater than the lattice constant of the a-axis obtained by x-ray diffraction.

Abstract: The EL device has a first electrode formed over a substrate, an insulating layer made from a dielectric material having a dielectric constant of 300 or greater formed over the first electrode, a light emitting layer formed over the insulating layer having a film thickness in a range of 10 ?m to 100 ?m, and a second electrode formed over the light emitting layer.

Abstract: A prism and an optical pickup employing such prism includes a parallel prism having a polarization beam splitter film and a reflection film. The polarization beam splitter film is formed on an angled plane of a glass material having an approximate parallelogram cross-section, and consists of a multi-layer film of a composite film made of Si and SiO.sub.2-x (x<0.5) and multiple layers of multiple dielectric films. The reflection film is formed on an angled plane of the same glass material approximately parallel to the angled plane on which the polarization beam splitter film is formed, and consists of a multi-layer film of a composite film made of metal Si and oxide SiO.sub.2-x (x<0.5) as a high refractive film and multiple layers of multiple dielectric films as a relatively low refractive film.

Abstract: A magnetic head is provided with a protective film of chromium nitride on its sliding surface. The film thickness is set to have no adverse effect upon the electromagnetic conversion characteristics of the head, and the film has sufficient wear resistance not only against a magnetic tape having its sliding surface formed of iron oxide or other metallic magnetic substances, but also against a magnetic tape having its sliding surface formed of chrome oxide, the chrome oxide substance having a strong abrasion effect upon the magnetic head. The protective film has a compressive internal stress in a range of 10.sup.9 to 10.sup.11 dynes/cm.sup.2, a Knoop hardness of not less than 1500 kgf/mm.sup.2, a nitrogen composition ratio in a range of 20 to 60 atom %. The magnetic head core portion (23, 60) or non-magnetosensitive portion (25; 26, 61) has a plurality of minute projections (62) formed on the top surface thereof.

Abstract: A magnetic head is provided with a protective film of chromium nitride on its sliding surface. The film thickness is set to have no adverse effect upon the electromagnetic conversion characteristics of the head, and the film has sufficient wear resistance not only against a magnetic tape having its sliding surface formed of iron oxide or other metallic magnetic substances, but also against a magnetic tape having its sliding surface formed of chrome oxide, the chrome oxide substance having a strong abrasion effect upon the magnetic head. The protective film has a compressive internal stress in a range of 10.sup.9 to 10.sup.11 dynes/cm.sup.2, a Knoop hardness of not less than 1500 kgf/mm.sup.2, a nitrogen composition ratio in a range of 20 to 60 atom %, and a film thickness in a range of 50 to 1000.ANG..