Abstract: A transfer pulse supplying circuit for supplying transfer pulses to a solid-state imaging apparatus including a charge transfer unit includes N (N is an integer of two or more) transfer pulse supplying wirings to which the transfer pulses are supplied, and lead-in wirings connecting the transfer pulse supplying wirings to corresponding lead-out wirings from the charge transfer unit. The respective lead-in wirings have almost the same width and length as one another. At least part of the lead-in wirings is divided into a first region and a second region by slits, and the first region is connected to the transfer pulse supplying wirings and the lead-out wiring, the second region is connected to the lead-out wiring. Regions of the respective lead-in wirings connected to the transfer pulse supplying wirings have almost the same ratio of width to length as one another.

Abstract: A solid-state imaging device is provided. The imaging device includes an imaging portion which includes light receiving portions and vertical transfer registers, a horizontal transfer portion, an output part for outputting an electrical signal converted from electric charges transferred from the horizontal transfer portion, a first reference potential applying means, and a second reference potential applying means. The imaging portion, the horizontal transfer portion and the output part are formed in a first conductivity type semiconductor substrate having a second conductivity type region, and a reference potential is applied to the second conductivity type semiconductor region. The first reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the output part is formed.

Abstract: A transfer pulse supplying circuit for supplying transfer pulses to a solid-state imaging apparatus including a charge transfer unit includes N (N is an integer of two or more) transfer pulse supplying wirings to which the transfer pulses are supplied, and lead-in wirings connecting the transfer pulse supplying wirings to corresponding lead-out wirings from the charge transfer unit. The respective lead-in wirings have almost the same width and length as one another. At least part of the lead-in wirings is divided into a first region and a second region by slits, and the first region is connected to the transfer pulse supplying wirings and the lead-out wiring, the second region is connected to the lead-out wiring. Regions of the respective lead-in wirings connected to the transfer pulse supplying wirings have almost the same ratio of width to length as one another.

Abstract: A solid-state imaging device is provided. The imaging device includes an imaging portion which includes light receiving portions and vertical transfer registers, a horizontal transfer portion, an output part for outputting an electrical signal converted from electric charges transferred from the horizontal transfer portion, a first reference potential applying means, and a second reference potential applying means. The imaging portion, the horizontal transfer portion and the output part are formed in a first conductivity type semiconductor substrate having a second conductivity type region, and a reference potential is applied to the second conductivity type semiconductor region. The first reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the output part is formed.

Abstract: A charge transfer device includes a charge transfer unit transferring signal charges, and an electric charge-voltage conversion unit detecting signal charges transferred from a last stage of the charge transfer unit via an output gate unit. An electrode in a last stage of the charge transfer unit is divided into first and second electrodes. A predetermined fixed potential is applied to the first electrode disposed on a side of the electric charge-voltage conversion unit. A transfer clock is applied to the second electrode disposed on a side opposite to the charge transfer unit.