Patents by Inventor SHOGO SAKO

SHOGO SAKO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230387325
    Abstract: A body layer formed of a semiconductor layer, the body layer comprising, a first region, a second region, and a channel region positioned therebetween; a channel stopper formed on the channel region; source and drain electrodes electrically connected to the first and second regions via first and second contact layers respectively are provided. Each of the first and second contact layers comprises an impurities-containing first amorphous silicon layer; a thickness of each of the first and second regions is less than a thickness of the channel region; and the first and second regions comprise a second amorphous silicon layer containing impurities in a concentration being less than a concentration of impurities contained in the first amorphous silicon layer. This makes it possible to suppress a photoexcited current and improve the aperture ratio in a case that a display apparatus is configured.
    Type: Application
    Filed: August 11, 2023
    Publication date: November 30, 2023
    Inventors: HIROYUKI OHTA, SHOGO SAKO, HISAYUKI KATOH
  • Patent number: 11764308
    Abstract: A body layer formed of a semiconductor layer, the body layer comprising, a first region, a second region, and a channel region positioned therebetween; a channel stopper formed on the channel region; source and drain electrodes electrically connected to the first and second regions via first and second contact layers respectively are provided. Each of the first and second contact layers comprises an impurities-containing first amorphous silicon layer; a thickness of each of the first and second regions is less than a thickness of the channel region; and the first and second regions comprise a second amorphous silicon layer containing impurities in a concentration being less than a concentration of impurities contained in the first amorphous silicon layer. This makes it possible to suppress a photoexcited current and improve the aperture ratio in a case that a display apparatus is configured.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: September 19, 2023
    Assignee: SAKAI DISPLAY PRODUCTS CORPORATION
    Inventors: Hiroyuki Ohta, Shogo Sako, Hisayuki Katoh
  • Publication number: 20210257501
    Abstract: A body layer formed of a semiconductor layer, the body layer comprising, a first region, a second region, and a channel region positioned therebetween; a channel stopper formed on the channel region; source and drain electrodes electrically connected to the first and second regions via first and second contact layers respectively are provided. Each of the first and second contact layers comprises an impurities-containing first amorphous silicon layer; a thickness of each of the first and second regions is less than a thickness of the channel region; and the first and second regions comprise a second amorphous silicon layer containing impurities in a concentration being less than a concentration of impurities contained in the first amorphous silicon layer. This makes it possible to suppress a photoexcited current and improve the aperture ratio in a case that a display apparatus is configured.
    Type: Application
    Filed: February 9, 2021
    Publication date: August 19, 2021
    Inventors: HIROYUKI OHTA, SHOGO SAKO, HISAYUKI KATOH