Patents by Inventor Shogo UESAKA

Shogo UESAKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9391289
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains at least a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: July 12, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromi Seo, Satoko Shitagaki, Satoshi Seo, Takahiro Ushikubo, Toshiki Sasaki, Shogo Uesaka
  • Patent number: 9379345
    Abstract: A light-emitting element with high reliability that can keep favorable characteristics after long-time driving is provided. In addition, a light-emitting device having a long lifetime including the light-emitting element is provided. Moreover, an electronic device and a lighting device having a long lifetime are provided. In a light-emitting element including an EL layer between a pair of electrodes, a light-emitting layer included in the EL layer has a stacked-layer structure which is different from the conventional structure, whereby the light-emitting element can keep favorable characteristics after long-time driving even in the case where carrier balance is changed over time due to driving of the light-emitting element or a light-emitting region is shifted due to the change.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: June 28, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Shogo Uesaka, Ryohei Yamaoka
  • Publication number: 20160164035
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Application
    Filed: February 11, 2016
    Publication date: June 9, 2016
    Inventors: Hiromi SEO, Satoko SHITAGAKI, Satoshi SEO, Takahiro USHIKUBO, Toshiki SASAKI, Shogo UESAKA
  • Publication number: 20160133878
    Abstract: A light-emitting element including a first electrode, a second electrode, and an EL layer provided between the first and second electrodes is provided. The first electrode includes a conductive layer, a first transparent conductive layer in contact with the conductive layer, and a second transparent conductive layer in contact with the first transparent conductive layer. The first transparent conductive layer contains a first oxide. The second transparent conductive layer contains a second oxide. The conductive layer has a function of reflecting light. The first oxide contains In and M (M represents Al, Si, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). The second oxide contains In. The resistivity of the second transparent conductive layer is lower than that of the first transparent conductive layer. The thickness of the second transparent conductive layer is greater than or equal to that of the first transparent conductive layer.
    Type: Application
    Filed: November 4, 2015
    Publication date: May 12, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shogo Uesaka, Toshiki SASAKI, Nobuharu OHSAWA, Satoshi SEO
  • Publication number: 20160126500
    Abstract: To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm.
    Type: Application
    Filed: October 22, 2015
    Publication date: May 5, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shogo Uesaka, Toshiki Sasaki, Riho Kataishi, Satoshi Seo
  • Publication number: 20160118625
    Abstract: An electrode layer having high reflectance and a light-emitting element having high emission efficiency are provided. The light-emitting element includes a first electrode layer, a second electrode layer, and an EL layer between the first electrode layer and the second electrode layer. The first electrode layer includes a conductive layer and an oxide layer in contact with the conductive layer. The conductive layer has a function of reflecting light. The oxide layer includes In and M (M represents Al, Si, Ti, Ga, Y, Zr, Sn, La, Ce, Nd, or Hf). A content of the M in the oxide layer is higher than or equal to a content of the In.
    Type: Application
    Filed: October 20, 2015
    Publication date: April 28, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shogo Uesaka, Toshiki Sasaki, Nobuharu Ohsawa
  • Publication number: 20160093678
    Abstract: To provide a novel light-emitting device with high productivity, the light-emitting device includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. In the first light-emitting element, a first lower electrode, a first transparent conductive layer, a first light-emitting layer, a second light-emitting layer, and an upper electrode are stacked in this order. In the second light-emitting element, a second lower electrode, a second transparent conductive layer, the first light-emitting layer, the second light-emitting layer, and the upper electrode are stacked in this order. In the third light-emitting element, a third lower electrode, a third transparent conductive layer, the second light-emitting layer, and the upper electrode are stacked in this order. The first transparent conductive layer includes a first region. The second transparent conductive layer includes a second region as thick as the third transparent conductive layer.
    Type: Application
    Filed: September 29, 2015
    Publication date: March 31, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Ryohei YAMAOKA, Shogo UESAKA
  • Patent number: 9263693
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: February 16, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiromi Seo, Satoko Shitagaki, Satoshi Seo, Takahiro Ushikubo, Toshiki Sasaki, Shogo Uesaka
  • Publication number: 20160043146
    Abstract: A light-emitting device in which different electrodes in a work function are used in a first light-emitting element and a second light-emitting element are provided. A light-emitting device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first electrode, an EL layer, and a second electrode in this order. The second light-emitting element includes a third electrode, the EL layer, and the second electrode in this order. The EL layer includes a first light-emitting layer, a layer, and a second light-emitting layer in this order. The structure of the first light-emitting layer is different from the structure of the second light-emitting layer. The first light-emitting element and the second light-emitting element are different in a carrier-injection property.
    Type: Application
    Filed: August 7, 2015
    Publication date: February 11, 2016
    Inventors: Shogo UESAKA, Nobuharu OHSAWA
  • Publication number: 20150270504
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Application
    Filed: June 4, 2015
    Publication date: September 24, 2015
    Inventors: Hiromi SEO, Satoko SHITAGAKI, Satoshi SEO, Takahiro USHIKUBO, Toshiki SASAKI, Shogo UESAKA
  • Publication number: 20150243918
    Abstract: A light-emitting element with a high current efficiency is provided. A low-power consumption light-emitting device is also provided. In addition, low-power consumption electronic device and lighting device are provided. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes a light-emitting layer. The light-emitting layer includes a first light-emitting layer and a second light-emitting layer. The emission peak of the second light-emitting layer is at a shorter wavelength than that of the first light-emitting layer. The first light-emitting layer includes a host material and a guest material. The LUMO level of the guest material is in the range of ±0.1 eV of the LUMO level of the host material.
    Type: Application
    Filed: February 17, 2015
    Publication date: August 27, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiki Sasaki, Shogo Uesaka, Satoshi Seo
  • Patent number: 9059430
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: June 16, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromi Seo, Satoko Shitagaki, Satoshi Seo, Takahiro Ushikubo, Toshiki Sasaki, Shogo Uesaka
  • Publication number: 20150102331
    Abstract: A light-emitting element with high reliability that can keep favorable characteristics after long-time driving is provided. In addition, a light-emitting device having a long lifetime including the light-emitting element is provided. Moreover, an electronic device and a lighting device having a long lifetime are provided. In a light-emitting element including an EL layer between a pair of electrodes, a light-emitting layer included in the EL layer has a stacked-layer structure which is different from the conventional structure, whereby the light-emitting element can keep favorable characteristics after long-time driving even in the case where carrier balance is changed over time due to driving of the light-emitting element or a light-emitting region is shifted due to the change.
    Type: Application
    Filed: October 14, 2014
    Publication date: April 16, 2015
    Inventors: Satoshi Seo, Shogo Uesaka, Ryohei Yamaoka
  • Publication number: 20150041792
    Abstract: A tandem light-emitting element in which generation of crosstalk can be suppressed even when the element is applied to a high-definition display is provided. In the tandem light-emitting element, a layer in contact the anode side of an intermediate layer contains 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen).
    Type: Application
    Filed: August 6, 2014
    Publication date: February 12, 2015
    Inventors: Tsunenori Suzuki, Shogo Uesaka, Ryohei Yamaoka, Satoshi Seo
  • Publication number: 20130240851
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Application
    Filed: March 8, 2013
    Publication date: September 19, 2013
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiromi SEO, Satoko SHITAGAKI, Satoshi SEO, Takahiro USHIKUBO, Toshiki SASAKI, Shogo UESAKA