Patents by Inventor Shogo Yamaya

Shogo Yamaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ETCHING METHOD AND PLASMA PROCESSING APPARATUS
    Publication number: 20230298898
    Abstract: A disclosed etching method includes (a) generating plasma of a processing gas in a chamber of a plasma processing apparatus. The plasma is generated in a state where a substrate is placed on a substrate support having a lower electrode in the chamber. The substrate has a film and a mask. The mask is provided on the film. The etching method further includes (b) etching the film by supplying ions from the plasma to the substrate by periodically applying a pulse of a voltage to a lower electrode. In the operation (b), a level of a voltage of the pulse is changed at least once such that an absolute value of a negative potential of the substrate has a tendency to increase according to progress of etching of the film.
    Type: Application
    Filed: May 30, 2023
    Publication date: September 21, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Shingo TAKAHASHI, Shogo YAMAYA
  • Etching method and plasma processing apparatus
    Patent number: 11705339
    Abstract: A disclosed etching method includes (a) generating plasma of a processing gas in a chamber of a plasma processing apparatus. The plasma is generated in a state where a substrate is placed on a substrate support having a lower electrode in the chamber. The substrate has a film and a mask. The mask is provided on the film. The etching method further includes (b) etching the film by supplying ions from the plasma to the substrate by periodically applying a pulse of a voltage to a lower electrode. In the operation (b), a level of a voltage of the pulse is changed at least once such that an absolute value of a negative potential of the substrate has a tendency to increase according to progress of etching of the film.
    Type: Grant
    Filed: September 14, 2021
    Date of Patent: July 18, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Shingo Takahashi, Shogo Yamaya
  • ETCHING METHOD AND PLASMA PROCESSING APPARATUS
    Publication number: 20220084837
    Abstract: A disclosed etching method includes (a) generating plasma of a processing gas in a chamber of a plasma processing apparatus. The plasma is generated in a state where a substrate is placed on a substrate support having a lower electrode in the chamber. The substrate has a film and a mask. The mask is provided on the film. The etching method further includes (b) etching the film by supplying ions from the plasma to the substrate by periodically applying a pulse of a voltage to a lower electrode. In the operation (b), a level of a voltage of the pulse is changed at least once such that an absolute value of a negative potential of the substrate has a tendency to increase according to progress of etching of the film.
    Type: Application
    Filed: September 14, 2021
    Publication date: March 17, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Shingo Takahashi, Shogo Yamaya