Abstract: Provided is an AM device containing a liquid crystal composition satisfying at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of the nematic phase, a small viscosity, a large optical anisotropy, a large positive dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to and heat, or having a suitable balance regarding at least two of the characteristics, and the AM device having a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth; wherein a liquid crystal display device contains a liquid crystal composition having a positive dielectric anisotropy and containing a specific compound having a large positive dielectric anisotropy as a first component and a specific compound having a small viscosity as a second component.

Abstract: A vertical MOSFET includes a gate electrode formed inside a trench in a semiconductor layer, an interlayer insulating film formed above the semiconductor layer, a source electrode formed above the interlayer insulating film and electrically connected to a source region of the semiconductor layer through a conductive plug filled in a contact hole of the interlayer insulating film, and a protection diode having one end electrically connected to the source electrode and another end connected to the gate electrode through a gate metal line and including a plurality of PN junctions. The protection diode is formed inside a depressed portion in the semiconductor layer.

Abstract: The invention provides a semiconductor device with a passivation film provided on a surface thereof, said passivation film comprising a SiON layer in contact with the surface of said semiconductor device, and a Si3N4 layer provided at the outer side of said SiON layer, chraracterized in that said passivation film has an outermost layer of Si3N4 and said outermost layer has a portion in contact with said semiconductor device or the exposed area of said SiON layer is nitrided. The semiconductor device has a high bonding strength between the passivation film and the semiconductor device and high moisture resistance.