Abstract: A semiconductor manufacturing apparatus includes a bevel processing chamber, a stage on which a first surface of a substrate is to be placed, a first gas supply pipe configured to supply first gas to a first surface side of the substrate, a first ring surrounding the stage and having an outer diameter smaller than a diameter of the substrate, a top plate facing a second surface of the substrate, a second gas supply pipe configured to supply second gas to a second surface side of the substrate, a second ring surrounding the top plate and having an outer diameter smaller than the diameter of the substrate, a first electrode surrounding the first ring, a second electrode surrounding the second ring, a third gas supply pipe configured to supply process gas, and a control circuit that controls plasma processing of a bevel of the substrate using the process gas.

Abstract: A semiconductor manufacturing apparatus includes: a chamber including a top plate; a holder provided in the chamber and configured to place a substrate; a high-frequency power source configured to apply high-frequency power to the holder; a gas supply pipe configured to supply a gas to the chamber; a gas discharge pipe configured to discharge a gas from the chamber; and a plurality of lift pins configured to move the substrate in a direction away from the holder to the top plate, which allows tip ends of the lift pins to move from an upper surface of the holder to a position with a first distance, wherein the first distance is equal to or greater than about 70% of a second distance between the upper surface of the holder and the top plate.