Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

Abstract: A front suspension device comprises a suspension arm, one end of which has a front-wheel support portion to support a front wheel of a vehicle and the other end of which is positioned on an inward side, in a vehicle width direction, of the front-wheel support portion and has a vehicle-body attachment portion to be attached to a vehicle-body member of the vehicle and a damper supported at a damper support portion which is provided at a portion of the suspension arm which is positioned in the vicinity of the front-wheel support portion at a lower portion thereof and connected to the vehicle-body member at an upper portion thereof. The damper support portion of the suspension arm has a breakage ease portion to cause breakage of the suspension arm.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

Abstract: According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided.

Abstract: The present invention provides a bonding apparatus and bonding method which can prevent warping of substrates by ensuring a sufficient standing time following bonding of the substrates, using a simple and compact apparatus. Substrate carrying parts 1a are formed along the circumference of a rotating turntable 1. The respective substrate carrying parts 1a are formed so that these parts pass through substrate placement positions 11 and 12, a bonding position 13, pre-curing standing positions 14a through 14d, a curing position 15, a post-curing standing position 16 and a conveying position 17 as the turntable 1 rotates. After being bonded in the bonding position 13, the substrates move through the pre-curing standing positions 14a through 14d as a result of the rotation of the turntable 1, and are allowed to stand for a fixed period of time, so that warping is corrected.

Abstract: The present invention provides a bonding apparatus and bonding method which can prevent warping of substrates by ensuring a sufficient standing time following bonding of the substrates, using a simple and compact apparatus. Substrate carrying parts 1a are formed along the circumference of a rotating turntable 1. The respective substrate carrying parts 1a are formed so that these parts pass through substrate placement positions 11 and 12, a bonding position 13, pre-curing standing positions 14a through 14d, a curing position 15, a post-curing standing position 16 and a conveying position 17 as the turntable 1 rotates. After being bonded in the bonding position 13, the substrates move through the pre-curing standing positions 14a through 14d as a result of the rotation of the turntable 1, and are allowed to stand for a fixed period of time, so that warping is corrected.