Patents by Inventor Shohei YAMAUCHI

Shohei YAMAUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11981548
    Abstract: A crane includes a boom and a hook suspended from the boom by a wire rope and transports a load in a state in which the load W is suspended from the hook, and further includes a sensor that detects the position of an obstacle, and a control device that generates a transport path CR by arranging a plurality of node points in an area containing a lifting-up point and a lifting-down point of the load and connecting the node points. The control device generates a new transport path after increasing a number of node points arranged around the obstacle when the sensor detects movement of the obstacle.
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: May 14, 2024
    Assignee: TADANO LTD.
    Inventors: Hiroshi Yamauchi, Yoshimasa Minami, Soichiro Fukamachi, Kazuma Mizuki, Shohei Nakaoka
  • Patent number: 11954865
    Abstract: An image processing apparatus determines, based on results of extracting a foreground area from a captured image by learning, a threshold value that is used for generation of a foreground image based on a difference between the captured image and a background image corresponding to the captured image. The image processing apparatus generates a foreground image based on a difference between the captured image and the background image by using the determined threshold value.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: April 9, 2024
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Shohei Yamauchi
  • Publication number: 20220406572
    Abstract: The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.
    Type: Application
    Filed: October 15, 2020
    Publication date: December 22, 2022
    Inventors: Kenichi OYAMA, Shohei YAMAUCHI, Kazuya DOBASHI, Akitaka SHIMIZU
  • Publication number: 20220172401
    Abstract: The image processing apparatus obtains a captured image including a foreground object and a background image not including the foreground object, adjusts pixel values of a pixel included in the background image, a color represented by the pixel values being in a specific color range, and generates an image representing an area of the foreground object based on a difference between the adjusted background image and the captured image.
    Type: Application
    Filed: November 19, 2021
    Publication date: June 2, 2022
    Inventor: Shohei Yamauchi
  • Publication number: 20210366129
    Abstract: An image processing apparatus determines, based on results of extracting a foreground area from a captured image by learning, a threshold value that is used for generation of a foreground image based on a difference between the captured image and a background image corresponding to the captured image. The image processing apparatus generates a foreground image based on a difference between the captured image and the background image by using the determined threshold value.
    Type: Application
    Filed: April 9, 2021
    Publication date: November 25, 2021
    Inventor: Shohei Yamauchi
  • Publication number: 20120220132
    Abstract: A semiconductor device manufacturing method includes: forming a core layer, an anti-reflection film and a photoresist layer on a layer to be etched of a substrate; trimming first line patterns of the photoresist layer; forming a first film on the first line patterns; removing the first film such that the first film is left in sidewall portions of the first line patterns of the photoresist layer; removing the photoresist layer; producing the core layer into second line patterns by etching the anti-reflection film and the core layer; forming a second film on the core layer produced into the second line patterns; removing the second film such that the second film is left in sidewall portions of the second line patterns of the core layer; and producing the layer to be etched into third line patterns by etching the layer to be etched.
    Type: Application
    Filed: February 23, 2012
    Publication date: August 30, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kenichi OYAMA, Shohei YAMAUCHI, Hidetami YAEGASHI