Abstract: An apparatus, a method, and a computer program product are provided for time reduction in an array read access control consisting of a bitcell and a pulldown device outside of the bitcell. To reduce gate delay, this design implements a pulldown device that controls the bitcell readout. A pulldown signal is generated to activate the pulldown device. Therefore, the pulldown signal can control the pulling down of the bitcell readout without a complete read of the data array inside the bitcell. This design reduces gate delay because the dependency upon the gating logic is overridden and the number of stages is reduced.

Abstract: An apparatus, a method, and a computer program product are provided for time reduction for an array read access control consisting of a bitcell with logic gating and a pull down device included, therein. To reduce gate delay this design implements gating logic inside the bitcell. The multiplex select gating signals are brought into the bitcell, and are gated with the data array. The gating logic controls the pull down device, and MUX select signals can be produced as a readout of the bitcell. This design reduces gate delay because the dependency upon the gating logic is overridden and the number of stages is reduced.

Abstract: An apparatus, a method, and a computer program product are provided for time reduction and energy conservation during address distribution in a high speed memory macro. To address these concerns, this design divides the typical data arrays into sets of paired subarrays, divides the conventional memory address latches into separate sets, and interposes one set of memory address latches between each pair of subarrays. Therefore, time is saved because the address signals have less wire length to travel and energy is saved because only one set of address latches needs to be powered on for each transmission.

Abstract: A method, an apparatus, and a computer program are provided for distributing data in a high speed processing unit. Traditionally, true readout data from multiport register files are inverted multiple times when transmitting the readout to data latches, located at multiple physical layers. The inversion of the readout data can be boost the signals and provide the proper true or complement data to the data latches. To reduce the number of inverters, the register files are configured to output true and complement signals. Therefore, power consumption and area are reduced with the elimination of the inverters.

Abstract: An apparatus, a method, and a computer program product are provided for time reduction in an array read access control consisting of a bitcell and a pulldown device outside of the bitcell. To reduce gate delay, this design implements a pulldown device that controls the bitcell readout. A pulldown signal is generated to activate the pulldown device. Therefore, the pulldown signal can control the pulling down of the bitcell readout without a complete read of the data array inside the bitcell. This design reduces gate delay because the dependency upon the gating logic is overridden and the number of stages is reduced.

Abstract: An apparatus, a method, and a computer program product are provided for time reduction and energy conservation during address distribution in a high speed memory macro. To address these concerns, this design divides the typical data arrays into sets of paired subarrays, divides the conventional memory address latches into separate sets, and interposes one set of memory address latches between each pair of subarrays. Therefore, time is saved because the address signals have less wire length to travel and energy is saved because only one set of address latches needs to be powered on for each transmission.

Abstract: An apparatus, a method, and a computer program product are provided for time reduction for an array read access control consisting of a bitcell with logic gating and a pull down device included, therein. To reduce gate delay this design implements gating logic inside the bitcell. The multiplex select gating signals are brought into the bitcell, and are gated with the data array. The gating logic controls the pull down device, and MUX select signals can be produced as a readout of the bitcell. This design reduces gate delay because the dependency upon the gating logic is overridden and the number of stages is reduced.

Abstract: A cycle control circuit for use with a memory device subarray and method of operation thereof. The cycle control circuit includes a previous address buffer for storing a last accessed address of the subarray and an address comparator for comparing a current requested address with the last accessed address in the previous address buffer. The cycle control circuit also includes a cycle counter, coupled to the address comparator, that receives a control signal generated by the address comparator and, in response thereto, modifies a reset operation of the subarray. In another aspect, the method includes applying an address to the subarray and generating control signals for the subarray to produce a data output in response to the address. After producing the data output, the applied address is stored. Next, a new address is received and the new address is compared to the stored address.

Abstract: A data transfer circuit for read data operations in a memory circuit employs a two-stage bit switch. True and compliment bit lines from a memory cell array are coupled to gates of a pair of transistors in a first stage bit switch. The data from the bit lines is thus transferred to a pair of read data nodes without a DC connection, so charge-sharing is avoided. Also, this allows the data to be extracted without a full logic-level swing of the bit lines, so faster operation is provided. The data from the data nodes is transferred to a pair of data lines through a second-stage bit switch activated by a timing input. The differential voltage on the bit lines is enhanced by a sense amplifier, and, also, the use of the first-stage bit switch allows the bit lines to be precharged to only half the logic level, speeding up operation; this sense amplifier is activated before the timing input for the second-stage bit switch.