Patents by Inventor Shoichi FUDA

Shoichi FUDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing group III nitride semiconductor substrate, group III nitride semiconductor substrate, and bulk crystal
    Patent number: 11680339
    Abstract: There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: June 20, 2023
    Assignee: FURUKAWA CO., LTD.
    Inventors: Yujiro Ishihara, Hiroki Goto, Shoichi Fuda, Tomohiro Kobayashi, Hitoshi Sasaki
  • METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND BULK CRYSTAL
    Publication number: 20200024770
    Abstract: There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing a base substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.
    Type: Application
    Filed: March 19, 2018
    Publication date: January 23, 2020
    Inventors: Yujiro ISHIHARA, Hiroki GOTO, Shoichi FUDA, Tomohiro KOBAYASHI, Hitoshi SASAKI