Patents by Inventor Shoichi Karakida
Shoichi Karakida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9537026Abstract: A method for manufacturing a solar-power-generator substrate by cutting out a semiconductor substrate by slicing a semiconductor ingot and then by forming a texture structure on a surface of the semiconductor substrate by performing a surface treatment on the surface of the semiconductor substrate, includes: cleaning including cleaning and removing an organic impurity and a metal impurity adhering to the surface of the semiconductor substrate with a cleaning fluid containing an oxidizing chemical; and etching including removing a damaged layer on a substrate surface generated by the slicing and forming the texture structure on the surface of the semiconductor substrate by performing anisotropic etching on the surface of the semiconductor substrate with an alkaline aqueous solution, the etching being performed subsequent to the cleaning.Type: GrantFiled: June 12, 2014Date of Patent: January 3, 2017Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Hajime Tsugeno, Mitsuhiro Nonogaki, Junji Kobayashi, Yusuke Oshiro, Takahiro Kawasaki, Shoichi Karakida
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Patent number: 9330986Abstract: The invention includes: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution.Type: GrantFiled: August 2, 2011Date of Patent: May 3, 2016Assignee: MITSUBISHI ELECTRIC CORPORATIONInventor: Shoichi Karakida
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Publication number: 20160118512Abstract: A method for manufacturing a solar-power-generator substrate by cutting out a semiconductor substrate by slicing a semiconductor ingot and then by forming a texture structure on a surface of the semiconductor substrate by performing a surface treatment on the surface of the semiconductor substrate, includes: cleaning including cleaning and removing an organic impurity and a metal impurity adhering to the surface of the semiconductor substrate with a cleaning fluid containing an oxidizing chemical; and etching including removing a damaged layer on a substrate surface generated by the slicing and forming the texture structure on the surface of the semiconductor substrate by performing anisotropic etching on the surface of the semiconductor substrate with an alkaline aqueous solution, the etching being performed subsequent to the cleaning.Type: ApplicationFiled: June 12, 2014Publication date: April 28, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hajime TSUGENO, Mitsuhiro NONOGAKI, Junji KOBAYASHI, Yusuke OSHIRO, Takahiro KAWASAKI, Shoichi KARAKIDA
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Patent number: 8981210Abstract: Included are a semiconductor substrate including, on one surface side, a dopant diffusion layer, a light-receiving surface side electrode electrically connected to the dopant diffusion layer and formed on the one surface side of the semiconductor substrate, and a rear surface side electrode formed on the other surface side of the semiconductor substrate. A first unevenness structure including first projected sections each having a square pyramid shape in a light-receiving surface side electrode formation region in which the light-receiving surface side electrode is formed on the one surface side of the semiconductor substrate including the dopant diffusion layer. A second unevenness structure including second projected sections each having a square pyramid shape larger than the first projected sections in a region where the light-receiving surface side electrode is not formed on the one surface side of the semiconductor substrate including the dopant diffusion layer.Type: GrantFiled: June 25, 2010Date of Patent: March 17, 2015Assignee: Mitsubishi Electric CorporationInventor: Shoichi Karakida
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Publication number: 20150056743Abstract: A manufacturing method of a solar cell includes a protection-film forming step of forming a protection film on one surface side of a semiconductor substrate, a first processing step of forming a plurality of first openings having a shape close to a desired opening shape and a size smaller than a target opening size in the protection film by a method having relatively high processing efficiency, a second processing step of forming second openings in the protection film by expanding the first openings up to the target opening size by a method having relatively high processing accuracy, and an etching step of forming an asperity structure having the a concave portion in an inverted pyramid shape on the one surface side of the semiconductor substrate by performing anisotropic wet etching on the semiconductor substrate in a region under the second openings via the second openings.Type: ApplicationFiled: March 12, 2012Publication date: February 26, 2015Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Shoichi Karakida
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Patent number: 8936949Abstract: A manufacturing method of a solar cell in which a light receiving side electrode including grid electrodes is provided on one side of a semiconductor substrate, comprises: a first step of forming an impurity diffusion layer on one side of the semiconductor substrate of a first conductivity type, the diffusion layer having a second conductivity-type impurity diffused therein; a second step of measuring a sheet resistance value of the diffusion layer at a plurality of measurement points in a surface of the diffusion layer; and a third step of dividing the surface of the diffusion layer into a plurality of areas corresponding to the measured sheet resistance values of the surface of the diffusion layer, setting a distance between adjacent grid electrodes for each of the areas, and forming the light receiving side electrode, which is electrically connected to the diffusion layer, on the diffusion layer.Type: GrantFiled: August 26, 2009Date of Patent: January 20, 2015Assignee: Mitsubishi Electric CorporationInventor: Shoichi Karakida
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Publication number: 20140162383Abstract: The invention includes: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution.Type: ApplicationFiled: August 2, 2011Publication date: June 12, 2014Applicant: Mitsubishi Electric CorporationInventor: Shoichi Karakida
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Publication number: 20130276860Abstract: A solar battery cell includes a semiconductor substrate of a first conduction type that includes a dopant diffusion layer on one surface side, a dopant element of a second conduction type being diffused into the dopant diffusion layer, a light-receiving surface side electrode formed on the one surface side of the semiconductor substrate, and a back surface side electrode that is formed on the other surface side of the semiconductor substrate, and a first irregular shape is provided on a surface on the other surface side of the semiconductor substrate, a second irregular shape lower in an optical reflectivity than the first irregular shape is provided on at least a part of a surface on the one surface side of the semiconductor substrate, and the one surface side of the semiconductor substrate is lower in the optical reflectivity than that on the other surface side of the semiconductor substrate.Type: ApplicationFiled: February 1, 2011Publication date: October 24, 2013Applicant: Mitsubishi Electric CorporationInventor: Shoichi Karakida
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Patent number: 8481105Abstract: When forming an electrode by printing several times, the cross section area of the electrode is increased and the resistance is reduced while more electrode material is required, which leads to a cost up and waste of resources. There is provided a solar cell manufacturing method for forming an electrode of a predetermined pattern by repeating printing on a substrate surface by a predetermined number of times. A mask pattern for printing the entire predetermined pattern is used at least once among the predetermined number of printings while mask patterns, each for printing a part of the predetermined pattern, are used in the other printings, thereby forming the electrode of the predetermined pattern.Type: GrantFiled: July 30, 2009Date of Patent: July 9, 2013Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Shoichi Karakida, Hiroaki Morikawa
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Patent number: 8450602Abstract: A solar cell comprises a substrate that includes a photoelectric conversion function, a first electrode provided on one surface of the substrate, a second electrode provided on other surface of the substrate, and a third electrode provided on the other surface of the substrate with its periphery overlapping the second electrode in the in-plane direction of the substrate for extracting an electric power from the second electrode. The thickness of the second electrode is larger than that of the third electrode, and the difference between the thickness of the second electrode and that of the third electrode is within a range from equal to or more than 10 micrometers to equal to or less than 30 micrometers. Thereby, in the solar cell, an electrode separation (alloy separation) can be effectively prevented.Type: GrantFiled: February 9, 2011Date of Patent: May 28, 2013Assignee: Mitsubishi Electric CorporationInventors: Shoichi Karakida, Takahiko Nishida, Mitsunori Nakatani, Hiroaki Morikawa
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Publication number: 20130048073Abstract: Included are a semiconductor substrate including, on one surface side, a dopant diffusion layer, a light-receiving surface side electrode electrically connected to the dopant diffusion layer and formed on the one surface side of the semiconductor substrate, and a rear surface side electrode formed on the other surface side of the semiconductor substrate. A first unevenness structure including first projected sections each having a square pyramid shape in a light-receiving surface side electrode formation region in which the light-receiving surface side electrode is formed on the one surface side of the semiconductor substrate including the dopant diffusion layer. A second unevenness structure including second projected sections each having a square pyramid shape larger than the first projected sections in a region where the light-receiving surface side electrode is not formed on the one surface side of the semiconductor substrate including the dopant diffusion layer.Type: ApplicationFiled: June 25, 2010Publication date: February 28, 2013Applicant: Mitsubishi Electric CorporationInventor: Shoichi Karakida
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Publication number: 20120125420Abstract: A manufacturing method of a solar cell in which a light receiving side electrode including grid electrodes is provided on one side of a semiconductor substrate, comprises: a first step of forming an impurity diffusion layer on one side of the semiconductor substrate of a first conductivity type, the diffusion layer having a second conductivity-type impurity diffused therein; a second step of measuring a sheet resistance value of the diffusion layer at a plurality of measurement points in a surface of the diffusion layer; and a third step of dividing the surface of the diffusion layer into a plurality of areas corresponding to the measured sheet resistance values of the surface of the diffusion layer, setting a distance between adjacent grid electrodes for each of the areas, and forming the light receiving side electrode, which is electrically connected to the diffusion layer, on the diffusion layer.Type: ApplicationFiled: August 26, 2009Publication date: May 24, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Shoichi Karakida
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Patent number: 8173895Abstract: A solar cell includes a photoelectric conversion layer, a first electrode on one surface of the photoelectric conversion layer, a second electrode provided on other surface of the photoelectric conversion layer, and a third electrode on the other surface of the photoelectric conversion layer. The third electrode is substantially rectangular with its corners rounded off in the in-plane direction of the photoelectric conversion layer, and overlaps the second electrode at the periphery thereof.Type: GrantFiled: April 8, 2010Date of Patent: May 8, 2012Assignee: Mitsubishi Electric CorporationInventors: Takahiko Nishida, Mitsunori Nakatani, Hiroaki Morikawa, Shoichi Karakida
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Patent number: 8106291Abstract: When forming an electrode by printing several times, the cross section area of the electrode is increased and the resistance is reduced while more electrode material is required, which leads to a cost up and waste of resources. There is provided a solar cell manufacturing method for forming an electrode of a predetermined pattern by repeating printing on a substrate surface by a predetermined number of times. A mask pattern for printing the entire predetermined pattern is used at least once among the predetermined number of printings while mask patterns, each for printing a part of the predetermined pattern, are used in the other printings, thereby forming the electrode of the predetermined pattern.Type: GrantFiled: May 7, 2004Date of Patent: January 31, 2012Assignee: Mitsubishi Electric CorporationInventors: Shoichi Karakida, Hiroaki Morikawa
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Publication number: 20110126901Abstract: A solar cell comprises a substrate that includes a photoelectric conversion function, a first electrode provided on one surface of the substrate, a second electrode provided on other surface of the substrate, and a third electrode provided on the other surface of the substrate with its periphery overlapping the second electrode in the in-plane direction of the substrate for extracting an electric power from the second electrode. The thickness of the second electrode is larger than that of the third electrode, and the difference between the thickness of the second electrode and that of the third electrode is within a range from equal to or more than 10 micrometers to equal to or less than 30 micrometers. Thereby, in the solar cell, an electrode separation (alloy separation) can be effectively prevented.Type: ApplicationFiled: February 9, 2011Publication date: June 2, 2011Applicant: Mitsubishi Electric CorporationInventors: Shoichi KARAKIDA, Takahiko NISHIDA, Mitsunori NAKATANI, Hiroaki MORIKAWA
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Patent number: 7910823Abstract: A solar cell includes a photoelectric conversion substrate, a first electrode on one surface of the substrate, a second electrode on the other surface of the substrate, and a third electrode on the other surface of the substrate. The third electrode extracts electric power from the second electrode, and overlaps the second electrode at the periphery in the in-plane direction of the photoelectric conversion substrate. The thickness of the second electrode is larger than that of the third electrode, and the difference between the thickness of the second electrode and that of the third electrode is not less than 10 micrometers and not more than 30 micrometers.Type: GrantFiled: November 28, 2005Date of Patent: March 22, 2011Assignee: Mitsubishi Electric CorporationInventors: Shoichi Karakida, Takahiko Nishida, Mitsunori Nakatani, Hiroaki Morikawa
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Publication number: 20100193028Abstract: A solar cell includes a photoelectric conversion layer, a first electrode on one surface of the photoelectric conversion layer, a second electrode provided on other surface of the photoelectric conversion layer, and a third electrode on the other surface of the photoelectric conversion layer. The third electrode is substantially rectangular with its corners rounded off in the in-plane direction of the photoelectric conversion layer, and overlaps the second electrode at the periphery thereof.Type: ApplicationFiled: April 8, 2010Publication date: August 5, 2010Applicant: Mitsubishi Electric CorporationInventors: Takahiko NISHIDA, Mitsunori Nakatani, Hiroaki Morikawa, Shoichi Karakida
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Publication number: 20090285979Abstract: When forming an electrode by printing several times, the cross section area of the electrode is increased and the resistance is reduced while more electrode material is required, which leads to a cost up and waste of resources. There is provided a solar cell manufacturing method for forming an electrode of a predetermined pattern by repeating printing on a substrate surface by a predetermined number of times. A mask pattern for printing the entire predetermined pattern is used at least once among the predetermined number of printings while mask patterns, each for printing a part of the predetermined pattern, are used in the other printings, thereby forming the electrode of the predetermined pattern.Type: ApplicationFiled: July 30, 2009Publication date: November 19, 2009Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Shoichi KARAKIDA, Hiroaki MORIKAWA
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Patent number: 7591712Abstract: A method of producing silicon blocks by cutting a silicon ingot is provided. The method uses a silicon ingot cutting slurry containing abrasive grains and an alkaline substance so as to provide the silicon blocks that can be produced into silicon wafers each having a thin thickness with reduced substrate damage at the time of producing a solar battery. The alkaline substance has a content mass that is at least 3.5% with respect to the mass of the entire liquid components of said slurry, and the slurry contains an organic amine having a mass ratio of 0.5 to 5.0 with respect to water in the liquid components of the slurry. The slurry is used at a pH of 12 or more and at a temperature of from 65 to 95 degrees C.Type: GrantFiled: May 11, 2005Date of Patent: September 22, 2009Assignee: Mitsubishi Electric CorporationInventors: Hiroaki Morikawa, Shoichi Karakida, Takafumi Kawasaki
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Publication number: 20080223351Abstract: In a method of producing silicon blocks by cutting a silicon ingot by the use of a silicon ingot cutting slurry containing abrasive grains and an alkaline substance so as to provide the silicon blocks that can be produced into silicon wafers each having a thin thickness with reduced substrate damage at the time of producing a solar battery, the content of said alkaline substance is at least 3.5 mass % with respect to the mass of the entire liquid components of said slurry, and said slurry contains an organic amine of from 0.5 to 5.0 by a mass ratio with respect to water in the liquid components of said slurry. Said slurry is used at a pH of 12 or more and at a temperature of from 65 to 95 degrees C.Type: ApplicationFiled: May 11, 2005Publication date: September 18, 2008Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hiroaki Morikawa, Shoichi Karakida, Takafumi Kawasaki