Abstract: A wireless communication technology which realizes high-speed transmission while making effective use of existing frequency bands. A wireless communication apparatus includes a communication unit to perform a wireless communication with a target communication device by simultaneously using a plurality of carrier frequency bands each of which has a specified bandwidth and is discontinuous between each carrier frequency-band interval.

Abstract: A mobile station device includes a receiving section configured to receive a control signal used for changing a value of the transmission power of the mobile station device from a base station, and a control section configured to change, if the transmission power value of the mobile station device is more than a certain threshold value when the control signal has been received, the transmission power value by setting an extent to which the transmission power value is to be changed as a certain extent of change, and, if the transmission power value of the radio mobile station device is less than the certain threshold value when the receiving section received, change the transmission power value by making the extent of change of the transmission power value smaller than the certain extent of change.

Abstract: A biosensor, comprising an insulating base plate, an electrode system containing at least a working electrode and a counter electrode and formed on the insulating base plate, and a sample-supplying section formed on the electrode system, wherein the sample-supplying section has a reaction layer comprising: a first reaction layer formed on the electrode system and containing at least a redox enzyme into which pyrroloquinoline quinone (PQQ), flavin adenine dinucleotide (FAD), or flavin mononucleotide (FMN) is incorporated as a prosthetic group; and a second reaction layer formed by applying, onto the first reaction layer, a solution including a lipid decomposing enzyme.

Abstract: A wireless communication technology which realizes high-speed transmission while making effective use of existing frequency bands. A wireless communication apparatus includes a communication unit to perform a wireless communication with a target communication device by simultaneously using a plurality of carrier frequency bands each of which has a specified bandwidth and is discontinuous between each carrier frequency-band interval.

Abstract: A wireless communication technology which realizes high-speed transmission while making effective use of existing frequency bands. A wireless communication apparatus includes a communication unit to perform a wireless communication with a target communication device by simultaneously using a plurality of carrier frequency bands each of which has a specified bandwidth and is discontinuous between each carrier frequency-band interval.

Abstract: A base station apparatus for performing radio communication with a mobile station in a cell having a plurality of sectors performs a MIMO transmission using an antenna selected from among the antennas provided in each of two sectors when the mobile station moves in the vicinity of the boundary between the sectors. A base station apparatus for performing the radio communication with a mobile station in a cell having no sector structure performs a MIMO transmission using two or more antennas selected from among the antennas when the mobile station moves.

Abstract: To provide a biosensor capable of measuring the concentration of specific component, such as glucose or neutral fat, in sample in a short time. The biosensor is A biosensor, comprising an insulating base plate, an electrode system containing at least a working electrode and a counter electrode and formed on the insulating base plate, and a sample-supplying section formed on the electrode system, wherein the sample-supplying section has a reaction layer comprising: a first reaction layer formed on the electrode system and containing at least a redox enzyme into which pyrroloquinoline quinone (PQQ), flavin adenine dinucleotide (FAD), or flavin mononucleotide (FMN) is incorporated as a prosthetic group; and a second reaction layer formed by applying, onto the first reaction layer, a solution including a lipid decomposing enzyme.

Abstract: A wireless communication technology which realizes high-speed transmission while making effective use of existing frequency bands. A wireless communication apparatus includes a communication unit to perform a wireless communication with a target communication device by simultaneously using a plurality of carrier frequency bands each of which has a specified bandwidth and is discontinuous between each carrier frequency-band interval.

Abstract: A partial oxide film with well regions formed therebeneath isolates transistor formation regions in an SOI layer from each other. A p-type well region is formed beneath part of the partial oxide film which isolates NMOS transistors from each other, and an n-type well region is formed beneath part of the partial oxide film which isolates PMOS transistors from each other. The p-type well region and the n-type well region are formed in side-by-side relation beneath part of the partial oxide film which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region adjacent thereto. An interconnect layer formed on an interlayer insulation film is electrically connected to the body region through a body contact provided in the interlayer insulation film. A semiconductor device having an SOI structure reduces a floating-substrate effect.

Abstract: A mobile station device includes a receiving section configured to receive a control signal used for changing a value of the transmission power of the mobile station device from a base station, and a control section configured to change, if the transmission power value of the mobile station device is more than a certain threshold value when the control signal has been received, the transmission power value by setting an extent to which the transmission power value is to be changed as a certain extent of change, and, if the transmission power value of the radio mobile station device is less than the certain threshold value when the receiving section received, change the transmission power value by making the extent of change of the transmission power value smaller than the certain extent of change.

Abstract: A base station apparatus for performing radio communication with a mobile station in a cell having a plurality of sectors performs a MIMO transmission using an antenna selected from among the antennas provided in each of two sectors when the mobile station moves in the vicinity of the boundary between the sectors. A base station apparatus for performing the radio communication with a mobile station in a cell having no sector structure performs a MIMO transmission using two or more antennas selected from among the antennas when the mobile station moves.

Abstract: Power control of a base station of a CDMA system that includes a plurality of communication terminals and a maintenance terminal is optimized by adjusting one of transmitted power and received power of the base station, based on power distribution values of radio channels used in radio communications, the power distribution values being obtained by counting the number of the radio channels corresponding to each of the transmitted power levels and the received power levels of the base station.

Abstract: A partial oxide film with well regions formed therebeneath isolates transistor formation regions in an SOI layer from each other. A p-type well region is formed beneath part of the partial oxide film which isolates NMOS transistors from each other, and an n-type well region is formed beneath part of the partial oxide film which isolates PMOS transistors from each other. The p-type well region and the n-type well region are formed in side-by-side relation beneath part of the partial oxide film which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region adjacent thereto. An interconnect layer formed on an interlayer insulation film is electrically connected to the body region through a body contact provided in the interlayer insulation film. A semiconductor device having an SOI structure reduces a floating-substrate effect.

Abstract: This invention relates to base station control equipment, radio base station equipment and radio terminal equipment that together constitute a mobile communication system. These base station control equipment, radio base station equipment and radio terminal equipment of this invention update transmitting power of a radio channel allotted to a new visit-zone to a greater and suitable value in time sequence. Therefore, mobile communication system according to the invention can keep speech quality of a completed call and transmission quality at high levels, can improve the number of radio channels that can be formed in parallel in a common frequency band (system capacity) or an information content of information that can be transmitted in parallel with desired transmission quality, and can improve utilization efficiency of a radio frequency.

Abstract: A partial oxide film (31) with well regions formed therebeneath isolates transistor formation regions in an SOI layer (3) from each other. A p-type well region (11) is formed beneath part of the partial oxide film (31) which isolates NMOS transistors from each other, and an n-type well region (12) is formed beneath part of the partial oxide film (31) which isolates PMOS transistors from each other. The p-type well region (11) and the n-type well region (12) are formed in side-by-side relation beneath part of the partial oxide film (31) which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region (11) adjacent thereto. An interconnect layer formed on an interlayer insulation film (4) is electrically connected to the body region through a body contact provided in the interlayer insulation film (4). A semiconductor device having an SOI structure reduces a floating-substrate effect.

Abstract: A Walsh code assigning apparatus includes a retaining unit retaining assignment order information about an order of assignment of the plural Walsh codes such that one Walsh code having a smaller bit length becomes unable to he orthogonally separated as being precedent over another Walsh code having a larger bit length and a controller including a retrieving unit retrieving an idle Walsh code having an assignment request bit length in accordance with the assignment order information retained in the retaining unit, and assigning unit assigning the idle Walsh code, which has been obtained by the retrieving unit, to the spreading code of a last-named communication channel for which the assignment request is issued.

Abstract: In a semiconductor device having an SOI structure and a method of manufacturing the same, influence by a parasitic transistor can be prevented, and no disadvantage is caused in connection with a manufacturing process. In this semiconductor device, an upper side portion of a semiconductor layer is rounded. Thereby, concentration of an electric field at the upper side portion of the semiconductor layer can be prevented. As a result, lowering of a threshold voltage of a parasitic transistor can be prevented, so that the parasitic transistor does not adversely affect subthreshold characteristics of a regular transistor. Owing to provision of a concavity of a U-shaped section, generation of etching residue can be prevented when etching a gate electrode for patterning the same. Thereby, a disadvantage is not caused in connection with the manufacturing process.

Abstract: In a mobile communication system 100 of the third generation CDMA type. A base station control apparatus 1 controls a transmission power of an opponent communication apparatus by means of measuring a FER within a predetermined segment, averaging plural pieces of quality information per frame, producing a translation table 40c by means of associating the FER acquired by the measurement and average frame quality information acquired by the averaging, estimating an estimated FER corresponding to the quality information per frame from the translation table 40c, and controlling a target receive power threshold based on the estimated FER and a target FER stored in advance, thereby quickly carrying out the transmission power control, improving the data quality of a lower layer, maintaining the data quality as constant, and increasing the throughput.

Abstract: In a semiconductor device having an SOI structure and a method of manufacturing the same, influence by a parasitic transistor can be prevented, and no disadvantage is caused in connection with a manufacturing process. In this semiconductor device, an upper side portion of a semiconductor layer is rounded. Thereby, concentration of an electric field at the upper side portion of the semiconductor layer can be prevented. As a result, lowering of a threshold voltage of a parasitic transistor can be prevented, so that the parasitic transistor does not adversely affect subthreshold characteristics of a regular transistor. Owing to provision of a concavity of a U-shaped section, generation of etching residue can be prevented when etching a gate electrode for patterning the same. Thereby, a disadvantage is not caused in connection with the manufacturing process.

Abstract: A partial oxide film (31) with well regions formed therebeneath isolates transistor formation regions in an SOI layer (3) from each other. A p-type well region (11) is formed beneath part of the partial oxide film (31) which isolates NMOS transistors from each other, and an n-type well region (12) is formed beneath part of the partial oxide film (31) which isolates PMOS transistors from each other. The p-type well region (11) and the n-type well region (12) are formed in side-by-side relation beneath part of the partial oxide film (31) which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region (11) adjacent thereto. An interconnect layer formed on an interlayer insulation film (4) is electrically connected to the body region through a body contact provided in the interlayer insulation film (4). A semiconductor device having an SOI structure reduces a floating-substrate effect.