Abstract: Provided is an encapsulation resin composition that is suitable for encapsulating a semiconductor element-mounted surface of a substrate with a semiconductor element(s) mounted thereon or a semiconductor element-forming surface of a wafer with a semiconductor element(s) formed thereon, and is superior in low warpage property and grindability. The encapsulation resin composition of the present invention contains: (A) a maleimide compound having at least one dimer acid frame-derived hydrocarbon group per molecule; (B) a reaction initiator; and (C) an inorganic filler surface-treated with a silane coupling agent, wherein the component (C) has a maximum particle size of not larger than 40 ?m.

Abstract: A thermosetting resin composition, including: a thermosetting resin; a laser direct structuring additive; an inorganic filler; and a coupling agent, wherein the coupling agent contains one or more selected from the group consisting of a triazine functional group-, isocyanate functional group-, isocyanuric acid functional group-, benzotriazole functional group-, acid anhydride functional group-, azasilacyclopentane functional group-, imidazole functional group-, and unsaturated group-containing-silane coupling agent, and is not a mercaptosilane coupling agent, an amino silane coupling agent, or an epoxy silane coupling agent.

Abstract: Provided is a heat-curable resin composition capable of yielding a cured product that has a superior dielectric property and heat resistance and is thus useful for high-frequency purposes. Particularly, there are provided a composition containing the following components (A), (C) and (D); and a composition containing the following components (A) and (B). The components (A), (B), (C) and (D) are: (A) a cyclopentadiene compound represented by the following formula (1) and/or an oligomer(s) of the cyclopentadiene compound wherein R represents a group selected from an alkyl group, an alkenyl group and an aryl group, n represents an integer of 1 to 4, each of x1 and x2 independently represents 0, 1 or 2, provided that when R represents an alkyl group or an aryl group, x1 represents 1 or 2, and x1 and x2 satisfy 1?x1+x2?4; (B) a cyclic imide compound; (C) a curing accelerator; and (D) an inorganic filler.

Abstract: Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cured product of the resin composition for encapsulation has a dielectric tangent of not larger than 0.50 when measured at 150° C. and 0.1 Hz. The semiconductor device is such that a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond is encapsulated by the cured product of the resin composition for encapsulation.

Abstract: Provided is a heat-curable resin composition capable of yielding a cured product that has a superior dielectric property and heat resistance and is thus useful for high-frequency purposes. Particularly, there are provided a composition containing the following components (A), (C) and (D); and a composition containing the following components (A) and (B). The components (A), (B), (C) and (D) are: (A) a cyclopentadiene compound represented by the following formula (1) and/or an oligomer(s) of the cyclopentadiene compound wherein R represents a group selected from an alkyl group, an alkenyl group and an aryl group, n represents an integer of 1 to 4, each of x1 and x2 independently represents 0, 1 or 2, provided that when R represents an alkyl group or an aryl group, x1 represents 1 or 2, and x1 and x2 satisfy 1?x1+x2?4; (B) a cyclic imide compound; (C) a curing accelerator; and (D) an inorganic filler.

Abstract: The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and/or silicone-modified phenolic resin.

Abstract: Provided is a heat-curable maleimide resin composition capable of being turned into a cured product with a superior dielectric property, and allowing a plating layer(s) to be formed only at laser-irradiated parts on the surface of or inside the cured product. The heat-curable maleimide resin composition contains: (A) a cyclic imide compound having, in one molecule, at least one dimer acid backbone, at least one linear alkylene group having not less than 6 carbon atoms, and at least two cyclic imide groups; and (B) a laser direct structuring additive being a metal oxide having a spinel structure and represented by the following average composition formula (1): AB2O4 ??(1) wherein A represents one or more metal elements selected from iron, copper, nickel, cobalt, zinc, magnesium and manganese, B represents iron or chrome, provided that A and B do not both represent iron.

Abstract: Provided are an epoxy resin composition for semiconductor encapsulation; and a semiconductor device having a cured product of such composition. The composition has a superior curability, and a metal layer (plated layer) can be selectively and easily formed on the surface of or inside the cured product of this composition via an electroless plating treatment. The composition of the present invention contains: (A) an epoxy resin; (B) a phenolic curing agent; (C) a curing accelerator having a urea structure; (D) a laser direct structuring additive; and (E) an inorganic filler.

Abstract: The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and/or silicone-modified phenolic resin.

Abstract: An epoxy resin composition comprising an epoxy resin, a curing agent, (A) a carboxyl-containing benzotriazole derivative, and (B) an alkoxysilyl-containing aminoalkylsilane derivative is suited for encapsulating semiconductor devices. The sum of (A)+(B) is 0.5-5.0 pbw per 100 pbw of the sum of the epoxy resin and the curing agent, and a molar ratio (A)/(B) is 0.5-1.5. The composition is free of sulfur and highly adhesive to metal substrates.

Abstract: The invention provides a silicone-modified epoxy resin composition comprising a silicone-modified epoxy resin having at least two epoxy groups, obtained from hydrosilylation reaction of an alkenyl-containing epoxy compound with an organopolysiloxane, a silicone-modified phenolic resin having at least two phenolic hydroxyl groups, obtained from hydrosilylation reaction of an alkenyl-containing phenol compound with an organopolysiloxane, black pigment, and an inorganic filler. Because of excellent tracking resistance, the epoxy resin composition is suited for encapsulating semiconductor devices.

Abstract: An epoxy resin composition comprising an epoxy resin, a curing agent, (A) a carboxyl-containing benzotriazole derivative, and (B) an alkoxysilyl-containing aminoalkylsilane derivative is suited for encapsulating semiconductor devices. The sum of (A)+(B) is 0.5-5.0 pbw per 100 pbw of the sum of the epoxy resin and the curing agent, and a molar ratio (A)/(B) is 0.5-1.5. The composition is free of sulfur and highly adhesive to metal substrates.

Abstract: The invention provides a silicone-modified epoxy resin composition comprising a silicone-modified epoxy resin having at least two epoxy groups, obtained from hydrosilylation reaction of an alkenyl-containing epoxy compound with an organopolysiloxane, a silicone-modified phenolic resin having at least two phenolic hydroxyl groups, obtained from hydrosilylation reaction of an alkenyl-containing phenol compound with an organopolysiloxane, black pigment, and an inorganic filler. Because of excellent tracking resistance, the epoxy resin composition is suited for encapsulating semiconductor devices.

Abstract: A resin composition comprising a thermosetting resin, an inorganic filler and an organosilicon compound of specific structure is provided. The inorganic filler is briefly treated with the organosilicon compound to have a high affinity to the resin. The composition is improved in flow and impact resistance and suited for encapsulating semiconductor devices.

Abstract: The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and/or silicone-modified phenolic resin.

Abstract: Provided is a semiconductor encapsulation resin composition exhibiting an insignificant heat decomposition when left under a high temperature of 200 to 250° C. for a long period of time; and a superior reliability and adhesion to a Cu LF and Ag plating under a high-temperature and high-humidity environment. The composition comprises: (A) a cyanate ester compound having not less than two cyanato groups in one molecule; (B) a phenolic compound; (C) at least one epoxy resin; (D) a copolymer obtained by a hydrosilylation reaction of an alkenyl group-containing epoxy compound and an organopolysiloxane; and (E) at least one compound selected from a tetraphenylborate salt of a tetra-substituted phosphonium compound and a tetraphenylborate salt. A molar ratio of phenolic hydroxyl groups in (B) to cyanato groups in (A) is 0.08 to 0.25, and a molar ratio of epoxy groups in (C) and (D) to cyanato groups in (A) is 0.04 to 0.25.

Abstract: Provided is a semiconductor encapsulation resin composition exhibiting an insignificant heat decomposition when left under a high temperature of 200 to 250° C. for a long period of time; and a superior reliability and adhesion to a Cu LF and Ag plating under a high-temperature and high-humidity environment. The composition comprises: (A) a cyanate ester compound having not less than two cyanato groups in one molecule; (B) a phenolic compound; (C) at least one epoxy resin; (D) a copolymer obtained by a hydrosilylation reaction of an alkenyl group-containing epoxy compound and an organopolysiloxane; and (E) at least one compound selected from a tetraphenylborate salt of a tetra-substituted phosphonium compound and a tetraphenylborate salt. A molar ratio of phenolic hydroxyl groups in (B) to cyanato groups in (A) is 0.08 to 0.25, and a molar ratio of epoxy groups in (C) and (D) to cyanato groups in (A) is 0.04 to 0.25.

Abstract: The purposes of the present invention is to provide a resin composition which provides a cured product which has a high glass transition temperature, a low moisture absorption and a good solder reflow property and small heat decomposition in storage at a high temperature for a long time, and has good moldability and good adhesiveness to a Cu lead frame.

Abstract: A prepreg that yields a semiconductor device which, even when using Cu wire, exhibits excellent reliability under conditions of high temperature and high humidity (heat-resistant and moisture-resistant reliability), a metal-clad laminate and a printed wiring board that use the prepreg, and a semiconductor device that uses the printed wiring board. Specifically disclosed are a prepreg comprising a substrate and a B-staged resin composition comprising (a) a thermosetting resin, (b) a hydrotalcite compound having a specific composition, (c) zinc molybdate, and (d) lanthanum oxide.

Abstract: An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a phosphazene compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.