Abstract: Provided is a hologram recording medium that can achieve suppression of deterioration of the storage stability in an unexposed state. The hologram recording medium includes a base material and a photosensitive layer. The oxygen permeability of the base material measured in an environment at 23° C. and 0% RH is more than 0.1 cm3·(m2·day·atm)?1 and 10000 cm3·(m2·day·atm)?1 or less. The photosensitive layer contains a polymerizable compound, and the polymerizable compound contains a compound represented by a specific general formula.

Abstract: A compound having a molecular weight of 3000 or less and a partial structure represented by Formula (X) is provided: In Formula (X), a ring W1 represents a ring structure having at least one double bond as a constituent element of the ring and having no aromaticity; and R3 represents a heterocyclic group, a halogen atom, a nitro group, a cyano group, a hydroxy group, a thiol group, a carboxy group, —SF5, —SF3, —SO3H, —SO2H, an aliphatic hydrocarbon group having 1 to 25 carbon atoms which may have a substituent, or an aromatic hydrocarbon group having 6 to 18 carbon atoms which may have a substituent.

Abstract: A compound represented by Formula (I) is provided: In Formula (I), R3, R4, and R5 each independently represent an electron-withdrawing group; R1, R2, R6, and R7 each independently represent a hydrogen atom, a heterocyclic group, a halogen atom, a nitro group, a cyano group, a hydroxy group, a thiol group, a carboxy group, —SCF3, —SF5, —SF3, —SO3H, —SO2H, an aliphatic hydrocarbon group having 1 to 25 carbon atoms which may have a substituent, or an aromatic hydrocarbon group having 6 to 18 carbon atoms which may have a substituent; and R1 and R2, R1 and R6, R6 and R7, and R4 and R5 may be linked to each other to form a ring.

Abstract: Disclosed is a retardation film which shows a high light selective absorbency to visible rays having short wavelengths near 400 nm to have a high light resistance, and which can give, when used in a display device, good display properties to the display device. This film is a retardation film, satisfying all of the following formulae (1) to (4): 2?A(380) (1), 0.5?A(400) (2), 0.4?A(420)/A(400) (3), and 100 nm?Re(550)?170 nm (4), in which each A(?) represents the absorbance of the film at a wavelength ? nm, and Re (550) represents the in-plane retardation value of the film to a light ray having a wavelength of 550 nm.

Abstract: Provided is an optical laminate which has high absorption selectivity to short-wavelength visible light having wavelengths around 400 nm and hence high light fastness and can impart better display characteristics when used for a display device. The optical laminate comprises at least one polarizing plate and at least one pressure-sensitive adhesive layer and satisfying the following formulae (1) and (2): A(400)?0.5??(1) A(420)/A(400)?0.3??(2) where A(400) represents the absorbance of the optical laminate at a wavelength of 400 nm in the transmission direction of the polarizing plate and A(420) represents the absorbance of the optical laminate at a wavelength of 420 nm in the transmission direction of the polarizing plate.

Abstract: Provided is an optical laminate which has high absorption selectivity to short-wavelength visible light having wavelengths around 400 nm and hence high light fastness and can impart better display characteristics when used for a display device. The optical laminate comprises at least one polarizing plate and at least one pressure-sensitive adhesive layer and satisfying the following formulae (1) and (2): A(400)?0.5??(1) A(420)/A(400)?0.3??(2) where A(400) represents the absorbance of the optical laminate at a wavelength of 400 nm in the transmission direction of the polarizing plate and A(420) represents the absorbance of the optical laminate at a wavelength of 420 nm in the transmission direction of the polarizing plate.

Abstract: Disclosed is a retardation film which shows a high light selective absorbency to visible rays having short wavelengths near 400 nm to have a high light resistance, and which can give, when used in a display device, good display properties to the display device. This film is a retardation film, satisfying all of the following formulae (1) to (4): 2?A(380) (1), 0.5?A(400) (2), 0.4?A(420)/A(400) (3), and 100 nm?Re(550)?170 nm (4), in which each A(?) represents the absorbance of the film at a wavelength ? nm, and Re (550) represents the in-plane retardation value of the film to a light ray having a wavelength of 550 nm.

Abstract: The present invention provides a duplexed operation processor control system that includes operation processors, an I/O device, and at least one communication path that couples the operation processors to the I/O device, and at least one communication path that couples the operation processors with each other. The duplexed operation processor control system switches over either of the operation processors to be a primary operation processor that executes a control operation for a control target, and the other to be a secondary operation processor that is in a stand-by state, and the secondary operation processor snoops control data synchronously when the primary operation processor acquires the control data from the control target.

Abstract: In a control apparatus which transmits/receives data from a central processing unit via a serial transfer channel to a communication control unit, and groups/distributes data of input/output units from the communication control unit via a parallel transfer channel, the control apparatus initiates a diagnosing unit of the parallel transfer channel in response to an instruction issued from the central processing unit, and diagnosis the input/output units subsequent to the diagnosis of the transmission channel. Data input/output timing of the input/output unit is also instructed from the central processing unit, so that the central processing unit can suppress lowering of response speeds caused by the diagnoses, and can maintain the periodicity of the data input/output.

Abstract: The present invention provides a duplexed operation processor control system that includes operation processors, an I/O device, and at least one communication path that couples the operation processors to the I/O device, and at least one communication path that couples the operation processors with each other. The duplexed operation processor control system switches over either of the operation processors to be a primary operation processor that executes a control operation for a control target, and the other to be a secondary operation processor that is in a stand-by state, and the secondary operation processor snoops control data synchronously when the primary operation processor acquires the control data from the control target.

Abstract: In a control apparatus which transmits/receives data from a central processing unit via a serial transfer channel to a communication control unit, and groups/distributes data of input/output units from the communication control unit via a parallel transfer channel, the control apparatus initiates a diagnosing unit of the parallel transfer channel in response to an instruction issued from the central processing unit, and diagnosis the input/output units subsequent to the diagnosis of the transmission channel. Data input/output timing of the input/output unit is also instructed from the central processing unit, so that the central processing unit can suppress lowering of response speeds caused by the diagnoses, and can maintain the periodicity of the data input/output.

Abstract: The present invention effectively compensates gain wavelength dependency of optical amplifiers by a simple method. That is, a value smaller than the minimum value of gain, in the range of usage wavelengths, of gain wavelength dependency data of the optical amplifiers is predetermined as a reference gain value. A loss wavelength characteristic which counterbalances the gain greater than the reference gain value is provided as an ideal loss wavelength characteristic which completely compensates the gain wavelength dependency.

Abstract: The present invention discloses an optical fiber capable of providing optical connection to a semiconductor laser diode (LD) as a light emitting element at high optical coupling efficiency. An optical fiber (5) for optical coupling efficiency improvement is-coupled, by a fusion joint technique, to an end portion of an optical fiber (2) which is optically connected to a semiconductor LD (3). The optical fiber (5) for optical coupling efficiency improvement has a circular mode field w and the semiconductor LD (3) has an elliptical mode field, wherein the diameter W1 of the fiber (5) is nearly identical to that of the latter field of the semiconductor LD (3) extending in the ellipse's major axis direction. Further, an end portion of the optical fiber 5 for optical coupling efficiency improvement on the side of the semiconductor LD (3) is formed into an approximately wedge-like shape and its endmost portion is formed into a lens.

Abstract: A plurality of pumping light sources (1) which generate pumping light having wavelengths different from each other are connected to respective input ports of an optical multiplexer via optical reflectors (3). The respective pumping light is stabilized by optical reflectors with respect to the oscillating wavelengths, and is multiplexed by an optical multiplexer (4). The multiplexed pumping light is multiplexed to signal light passing through an optical fiber (6) for amplification.

Abstract: The invention relates to an optical integrated circuit for bidirectional communications which is able to achieve a downsizing and high integration with the production cost thereof decreased. An optical waveguide circuit is formed on a substrate and a photo diode (PD) is connected to the outgoing end side thereof. The optical waveguide circuit has a circuit of an optical wavelength division multiplexer which causes communication signal light (.lambda.1) inputted from a bidirectional light input/output port to be transmitted through a communication light selective transmission filter and to be outputted from a communication light output port and causes non-communication light (.lambda.2) to be reflected by the communication light selective transmission filter and to outgo through a non-communication light output port. A piezoelectric element is provided on the upper part at the outgoing side of the communication light output port.

Abstract: A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.

Abstract: An apparatus for manufacturing a single crystal of compound semiconductor consisting of Ga and As comprises a crucible storing Ga and having a seed crystal arranged at a lower end portion thereof a gas material susceptor, arranged below the crucible, for storing As, the gas material susceptor and the crucible being arranged in a growth susceptor to be capable of communicating with each other, a main heater for heating and melting Ga in the crucible and for cooling the melt Ga from a lower portion thereof to grow a single crystal, a sub heater for heating and evaporating As in the gas material susceptor and allowing the evaporated As to react with the melt Ga in the said crucible, and a magnetic field applying coil for applying a vertical magnetic field in the melt Ga and As in the crucible so that a surface of the melt in the crucible which is grown to a single crystal is lower in temperature at a central portion thereof than a peripheral portion thereof in a radial direction and at the same time projects upw