Patents by Inventor Shoichi Saitoh

Shoichi Saitoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10923486
    Abstract: A memory device according to an embodiment includes a first conductive layer; a second conductive layer; a ferroelectric layer provided between the first conductive layer and the second conductive layer and containing hafnium oxide; a paraelectric layer provided between the first conductive layer and the ferroelectric layer and containing a first oxide; and an oxide layer provided between the paraelectric layer and the ferroelectric layer and containing a second oxide having an oxygen area density lower than an oxygen area density of the first oxide.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: February 16, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Shoichi Kabuyanagi, Yuuichi Kamimuta, Masumi Saitoh, Marina Yamaguchi
  • Publication number: 20200303461
    Abstract: A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, a variable resistance film provided between these, a third wiring extending in a third direction, a first semiconductor section connected to the first wiring and the third wiring, a first gate electrode facing the first semiconductor section, a contact connected to the second wiring, a fourth wiring further from the substrate than the contact is, a second semiconductor section connected to the contact and the fourth wiring, and a second gate electrode facing the second semiconductor section. The first semiconductor section, the first gate electrode, the second semiconductor section, and the second gate electrode respectively include a portion included in a cross section extending in the second direction and the third direction.
    Type: Application
    Filed: September 9, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Shoichi KABUYANAGI, Shosuke FUJII, Masumi SAITOH
  • Patent number: 10784312
    Abstract: A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, a variable resistance film provided between these, a third wiring extending in a third direction, a first semiconductor section connected to the first wiring and the third wiring, a first gate electrode facing the first semiconductor section, a contact connected to the second wiring, a fourth wiring further from the substrate than the contact is, a second semiconductor section connected to the contact and the fourth wiring, and a second gate electrode facing the second semiconductor section. The first semiconductor section, the first gate electrode, the second semiconductor section, and the second gate electrode respectively include a portion included in a cross section extending in the second direction and the third direction.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: September 22, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Shoichi Kabuyanagi, Shosuke Fujii, Masumi Saitoh
  • Patent number: 10692934
    Abstract: According to one embodiment, a memory device includes a first conductive layer, a second conductive layer, and a first layer. A direction from the first conductive layer toward the second conductive layer is aligned with a first direction. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region including titanium and oxygen, a second region including aluminum and oxygen and being provided between the first conductive layer and the first region, and a third region including aluminum and oxygen and being provided between the first region and the second conductive layer. A surface area in a first plane of a brookite region included in the first region is 58 percent or more of a surface area in the first plane of the first region. The first plane crosses the first direction.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: June 23, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Marina Yamaguchi, Shoichi Kabuyanagi, Masumi Saitoh
  • Publication number: 20200083292
    Abstract: According to one embodiment, a memory device includes a first conductive layer, a second conductive layer, and a first layer. A direction from the first conductive layer toward the second conductive layer is aligned with a first direction. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region including titanium and oxygen, a second region including aluminum and oxygen and being provided between the first conductive layer and the first region, and a third region including aluminum and oxygen and being provided between the first region and the second conductive layer. A surface area in a first plane of a brookite region included in the first region is 58 percent or more of a surface area in the first plane of the first region. The first plane crosses the first direction.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 12, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Marina YAMAGUCHI, Shoichi KABUYANAGI, Masumi SAITOH
  • Patent number: 10446749
    Abstract: A memory device according to an embodiment includes a first conductive layer extending in a first direction, a second conductive layer extending in the first direction, a third conductive layer extending in a second direction intersecting the first direction, an insulating layer containing aluminum oxide provided between the first conductive layer and the second conductive layer, and a first insulating film including a first region located between the first conductive layer and the third conductive layer and a second region located between the insulating layer and the third conductive layer. The first region includes hafnium oxide mainly formed as an orthorhombic. The second region includes hafnium oxide mainly formed as crystals other than the orthorhombic.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: October 15, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Yoko Yoshimura, Hiromichi Kuriyama, Shoichi Kabuyanagi, Yuuichi Kamimuta, Chika Tanaka, Masumi Saitoh
  • Publication number: 20190296234
    Abstract: A memory device according to an embodiment includes a first conductive layer extending in a first direction, a second conductive layer extending in the first direction, a third conductive layer extending in a second direction intersecting the first direction, an insulating layer containing aluminum oxide provided between the first conductive layer and the second conductive layer, and a first insulating film including a first region located between the first conductive layer and the third conductive layer and a second region located between the insulating layer and the third conductive layer. The first region includes hafnium oxide mainly formed as an orthorhombic. The second region includes hafnium oxide mainly formed as crystals other than the orthorhombic.
    Type: Application
    Filed: September 18, 2018
    Publication date: September 26, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Yoko Yoshimura, Hiromichi Kuriyama, Shoichi Kabuyanagi, Yuuichi Kamimuta, Chika Tanaka, Masumi Saitoh
  • Publication number: 20170102618
    Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 ?m or greater amount to a density of 30 particles/ml or less.
    Type: Application
    Filed: December 21, 2016
    Publication date: April 13, 2017
    Applicant: FUJIFILM Corporation
    Inventors: Keita KATO, Sou KAMIMURA, Yuichiro ENOMOTO, Kaoru IWATO, Shohei KATAOKA, Shoichi SAITOH
  • Patent number: 9523913
    Abstract: A pattern forming method comprises (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the specific formula.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: December 20, 2016
    Assignee: FUJIFILM Corporation
    Inventors: Keita Kato, Michihiro Shirakawa, Hidenori Takahashi, Shoichi Saitoh, Fumihiro Yoshino
  • Patent number: 9482947
    Abstract: A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit capable of decomposing by an action of an acid to produce a carboxyl group, represented by the following formula (I) as defined in the specification and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film; and (iii) a step of performing a development by using a developer containing an organic solvent to form a negative pattern.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: November 1, 2016
    Assignee: FUJIFILM Corporation
    Inventors: Shuhei Yamaguchi, Hidenori Takahashi, Michihiro Shirakawa, Shohei Kataoka, Shoichi Saitoh, Fumihiro Yoshino
  • Publication number: 20160291461
    Abstract: There are provided a pattern forming method in which, in self-organization lithography using a graphoepitaxy method, high miniaturization of patterns can be achieved with high quality and high efficiency by a pattern forming method including (i) a step of forming a block copolymer layer containing a specific first block copolymer or a specific second block copolymer on a specific substrate, (ii) a step of phase-separating the block copolymer layer, and (iii) a step of selectively removing at least one phase of a plurality of phases of the block copolymer layer, an electronic device manufacturing method using the pattern forming method and the electronic device, and a block copolymer used in the pattern forming method and the production method thereof.
    Type: Application
    Filed: June 3, 2016
    Publication date: October 6, 2016
    Applicant: FUJIFILM Corporation
    Inventors: Hayato YOSHIDA, Hiroo TAKIZAWA, Keizo KIMURA, Shoichi SAITOH, Eriko MITANI
  • Patent number: 9316910
    Abstract: Provided is a pattern forming method that is excellent in roughness performance such as line width roughness and exposure latitude, and an actinic-ray-sensitive or radiation-sensitive resin composition and a resist film used for the pattern forming method. The pattern forming method includes (1) forming a film using an actinic-ray-sensitive or radiation-sensitive resin composition containing a resin that includes 65 mol % or more of a repeating unit having a group which generates a polar group by being degraded by the action of an acid based on all repeating units in the resin and at least one kind of repeating unit represented by the following General Formula (I) or (II), (2) exposing the film, and (3) developing the exposed film using a developer that contains an organic solvent.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: April 19, 2016
    Assignee: FUJIFILM Corporation
    Inventors: Shohei Kataoka, Hidenori Takahashi, Shuhei Yamaguchi, Shoichi Saitoh, Michihiro Shirakawa, Fumihiro Yoshino
  • Publication number: 20150253662
    Abstract: According to an exemplary embodiment of the present invention, there is provided an actinic ray-sensitive or radiation-sensitive resin composition includes an aromatic group and a resin (A) that may include (i) a repeating unit having a group capable of decomposing by the action of an acid to generate a polar group and (ii) a repeating unit having a polar group other than a phenolic hydroxyl group, wherein the total content of the repeating units (i) and (ii) is 51 mol % or more based on the entire repeating units in the resin (A).
    Type: Application
    Filed: May 26, 2015
    Publication date: September 10, 2015
    Applicant: FUJIFILM CORPORATION
    Inventors: Keita KATO, Michihiro SHIRAKAWA, Hidenori TAKAHASHI, Shoichi SAITOH, Fumihiro YOSHINO
  • Patent number: 9120288
    Abstract: The pattern forming method of the invention includes (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit (a) represented by the following general formula (I), a compound (B) capable of generating an organic acid upon irradiation with actinic rays or radiation, and a nitrogen-containing organic compound (NA) having a group capable of leaving by the action of an acid, (ii) exposing the film, and (iii) developing the film after the exposure using a developer including an organic solvent to form a negative type pattern, in the general formula (I), R0 represents a hydrogen atom or a methyl group, and each of R1, R2, and R3 independently represents a linear or branched alkyl group.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: September 1, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Hidenori Takahashi, Shuhei Yamaguchi, Shohei Kataoka, Michihiro Shirakawa, Fumihiro Yoshino, Shoichi Saitoh
  • Publication number: 20140299499
    Abstract: The refill lead case includes a case body provided with an opening portion, a lid attachment member attached to the opening portion of the case body, and a lid body attached to the lid attachment member in a slidable manner. The lid body is provided with a slide operation portion located at the front surface side of the lid attachment member and a bridge portion that is integrally molded with the slide operation portion, protrudes toward the rear surface side of the lid attachment member, and extends in the slide direction of the lid body. The bridge portion includes slope surfaces formed at the left and right sides while ridge lines are centered therebetween. When the lid body takes a downward posture, the refill leads accommodated in the case body are distributed inside the case body with respect to the ridge lines as a boundary.
    Type: Application
    Filed: April 3, 2014
    Publication date: October 9, 2014
    Applicant: MITSUBISHI PENCIL COMPANY, LIMITED
    Inventor: Shoichi Saitoh
  • Publication number: 20140234762
    Abstract: A pattern forming method including: a process of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin including a Repeating Unit (a1) having a group capable of being decomposed by acid and generating a carboxyl group, and a compound capable of generating acid through irradiation of actinic rays or radiation; a process of exposing the film; and a process of developing the exposed film using a developer including an organic solvent to form a negative tone pattern, wherein the value X obtained by substituting the number of each atom included in the Repeating Unit (a1) after being decomposed by acid and generating a carboxyl group in the following formula is 0<X?5.
    Type: Application
    Filed: May 8, 2014
    Publication date: August 21, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Shuhei YAMAGUCHI, Hidenori TAKAHASHI, Michihiro SHIRAKAWA, Shohei KATAOKA, Shoichi SAITOH, Fumihiro YOSHINO
  • Publication number: 20140127629
    Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 ?m or greater amount to a density of 30 particles/ml or less.
    Type: Application
    Filed: January 13, 2014
    Publication date: May 8, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Keita KATO, Sou KAMIMURA, Yuichiro ENOMOTO, Kaoru IWATO, Shohei KATAOKA, Shoichi SAITOH
  • Publication number: 20140087310
    Abstract: A pattern forming method comprises (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the specific formula.
    Type: Application
    Filed: December 2, 2013
    Publication date: March 27, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Keita KATO, Michihiro SHIRAKAWA, Hidenori TAKAHASHI, Shoichi SAITOH, Fumihiro YOSHINO
  • Patent number: 8663907
    Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 ?m or greater amount to a density of 30 particles/ml or less.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: March 4, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Keita Kato, Sou Kamimura, Yuichiro Enomoto, Kaoru Iwato, Shohei Kataoka, Shoichi Saitoh
  • Publication number: 20140045117
    Abstract: A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit capable of decomposing by an action of an acid to produce a carboxyl group, represented by the following formula (I) as defined in the specification and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film; and (iii) a step of performing a development by using a developer containing an organic solvent to form a negative pattern.
    Type: Application
    Filed: September 24, 2013
    Publication date: February 13, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Shuhei YAMAGUCHI, Hidenori TAKAHASHI, Michihiro SHIRAKAWA, Shohei KATAOKA, Shoichi SAITOH, Fumihiro YOSHINO