Abstract: A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

Abstract: A manufacturing method of a semiconductor device includes: forming an insulating layer above a substrate; forming a recessed section in the insulating layer; forming, on the insulating layer, a mask pattern having a first opening which exposes the recessed section, and a second opening which is arranged outside the first opening and does not expose the recessed section; forming a first conductive member and a second conductive member by respectively depositing a conductive material in the first opening and the second opening; and polishing and removing the first conductive member and the second conductive member on the upper side of the insulating layer so as to leave the first conductive member in the recessed section.

Abstract: A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

Abstract: A manufacturing method of a semiconductor device includes: forming an insulating layer above a substrate; forming a recessed section in the insulating layer; forming, on the insulating layer, a mask pattern having a first opening which exposes the recessed section, and a second opening which is arranged outside the first opening and does not expose the recessed section; forming a first conductive member and a second conductive member by respectively depositing a conductive material in the first opening and the second opening; and polishing and removing the first conductive member and the second conductive member on the upper side of the insulating layer so as to leave the first conductive member in the recessed section.

Abstract: A method for fabricating a semiconductor includes the steps of forming a porous insulation film and wires on a substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

Abstract: The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 ?m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25?a?0.60, and 0?c?0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Abstract: A method for fabricating a semiconductor is disclosed. The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

Abstract: A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of electrodes on the magnetoresistance effect element using the lift-off mask pattern as a mask, and a process for removing the lift-off mask pattern. The process for forming the lift-off mask pattern is performed according to a dry etching process.

Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

Abstract: Provided are technologies for manufacturing protrusions having various properties better than the conventional technologies. The protrusions are manufactured by the steps comprising: filling a specific composition into slits by means of a squeegee printing method; curing the photosensitive resin in the composition by light exposure to make a cured composition from the composition; and firing the cured composition. These protrusions preferably have a relative dielectric constant of less than 4.0 and a difference in linear expansion coefficient of not more than 4 ppm/° C., based on the linear expansion coefficient of a dielectric layer material for use.

Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 ?m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25?a?0.60, and 0?c?0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 ?m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25?a?0.60, and 0?c?0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Abstract: A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of electrodes on the magnetoresistance effect element using the lift-off mask pattern as a mask, and a process for removing the lift-off mask pattern. The process for forming the lift-off mask pattern is performed according to a dry etching process.

Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 &mgr;m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; 1