Abstract: There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Abstract: A light emitting element includes: a light emitting layer; a rectangular first principal surface being parallel to the light emitting layer; a rectangular second principal surface opposing to the first principal surface so that the light emitting layer is sandwiched between the first and second principal surfaces; and first through fourth side surfaces of the light emitting element provided with a rough surface, the first through fourth side surfaces connecting between the first principal surface and the second principal surface, respectively so as to define a solid shape.

Abstract: There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Abstract: A light emitting element includes: a light emitting layer; a rectangular first principal surface being parallel to the light emitting layer; a rectangular second principal surface opposing to the first principal surface so that the light emitting layer is sandwiched between the first and second principal surfaces; and first through fourth side surfaces of the light emitting element provided with a rough surface, the first through fourth side surfaces connecting between the first principal surface and the second principal surface, respectively so as to define a solid shape.

Abstract: There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Abstract: An evaluating method capable of quickly measuring the essential lifetime in an epitaxial wafer for a light emitting device independently from the excited carrier density without breaking the epitaxial wafer is configured to obtain the non-radiative lifetime from the changing rate of intensity of luminescence light generated by irradiating exited light onto the epitaxial wafer at the time when the changes with time becomes below a given value, and to obtain the non-radiative lifetime independent from the excited carrier density. An epitaxial wafer for a light emitting device with a higher emission efficiency than conventional ones has a non-radiative lifetime not shorter than 20 nanoseconds obtained by the evaluating method, and the diffusion amount of zinc into its active layer does not exceed 1E13 atoms per cm2.

Abstract: A semiconductor wafer evaluation apparatus, wherein a conductivity detector and a carrier mobility detector are independently arranged so that detections can be made under optimum conditions, respectively. A wafer carrying unit is arranged so as to carry or convey a semiconductor wafer on a carrying path between the two detectors. These components are controlled by a controller. A carrier concentration is calculated from the conductivity and the carrier mobility detected by both detectors. When a partition wall for preventing interference of an electromagnetic wave is provided between the conductivity detector and the carrier mobility detector, interference between the two detectors is further reduced.