Abstract: The manufacturing method for the electronic device using graphene includes: forming a catalytic metal, forming a catalytic metal, forming a passivation film so as to expose upper surfaces of the catalytic metal and the catalytic metal, forming a graphene layer on the catalytic metal and catalytic metal that are exposed, forming a insulation film so as to cover the graphene layer, forming a substrate on the insulation film, and removing the catalytic metal.

Abstract: An electromagnetic wave detector includes at least one photoelectric conversion element and a plasmon filter disposed so as to be opposite to the at least one photoelectric conversion element. A plurality of through-holes are periodically made in the plasmon filter. The at least one photoelectric conversion element includes a semiconductor layer including a region overlapping with at least one through-hole in the plurality of through-holes in planar view, an insulating layer formed so as to cover a part of the region, a two-dimensional material layer that is disposed on the other portion of the region and the insulating layer and electrically connected to the other portion of the region, a first electrode portion electrically connected to the two-dimensional material layer, and a second electrode portion electrically connected to the semiconductor layer.

Abstract: An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer, a first electrode portion, a second electrode portion, and a ferroelectric layer. Two-dimensional material layer is electrically connected to semiconductor layer. First electrode portion is electrically connected to two-dimensional material layer. Second electrode portion is electrically connected to two-dimensional material layer with semiconductor layer interposed therebetween. Ferroelectric layer is electrically connected to at least any one of first electrode portion, second electrode portion and semiconductor layer. Electromagnetic wave detector is configured such that an electric field generated from ferroelectric layer is shielded with respect to two-dimensional material layer. Alternatively, ferroelectric layer is arranged so as not to be overlapped with two-dimensional material layer in plan view.

Abstract: An electromagnetic wave detector 100 comprises: a substrate 5 having a front surface and a back surface; an insulating layer 4 formed of a rare earth oxide, which is provided on the front surface of the substrate 5; a pair of electrodes 2 provided on the insulating layer 4 so as to be arranged to face each other across a gap; and a two-dimensional material layer 1 provided on the insulating layer 4 so as to be electrically connected to the pair of electrodes 2. The rare earth oxide contains a base material made of an oxide of a first rare earth element, and a second rare earth element different from the first rare earth element, which is activated in the base material.

Abstract: Electromagnetic wave detector includes semiconductor layer, first insulating film, two-dimensional material layer, first electrode, second electrode, second insulating film, and control electrode. First insulating film is arranged on semiconductor layer. First insulating film is provided with opening. Two-dimensional material layer is electrically connected to semiconductor layer in opening. Two-dimensional material layer extends from above opening to first insulating film. Second insulating film is in contact with two-dimensional material layer. Control electrode is connected to two-dimensional material layer with second insulating film interposed therebetween.

Abstract: An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

Abstract: An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer electrically connected to the semiconductor layer, a first electrode electrically connected to the two-dimensional material layer without the semiconductor layer interposed therebetween, a second electrode electrically connected to the two-dimensional material layer with the semiconductor layer interposed therebetween, and a ferroelectric layer in contact with at least a part of the two-dimensional material layer.

Abstract: An electromagnetic wave detector includes a semiconductor substrate, a first insulating film disposed on the semiconductor substrate and formed so as to expose a part of the semiconductor substrate, a first electrode disposed on the first insulating film, a two-dimensional material layer having a joint part forming a Schottky junction with the semiconductor substrate in a part of the semiconductor substrate, the two-dimensional material layer extending from the joint part to the first electrode over the first insulating film, a second electrode in contact with the semiconductor substrate, and a control electrode disposed at least partly around the joint part in plan view to form a Schottky junction with the semiconductor substrate.

Abstract: An electromagnetic wave detector includes: a semiconductor layer in which a step is formed, the semiconductor layer having sensitivity to a detection wavelength; an insulating film disposed on the step and provided with an opening through which a part of the step is exposed; a two-dimensional material layer disposed on the insulating film and the opening, the two-dimensional material layer including a connection region electrically connected to the semiconductor layer in the opening; a first electrode disposed on the insulating film and electrically connected to the two-dimensional material layer; and a second electrode disposed on the semiconductor layer and electrically connected to the first electrode through the connection region of the two-dimensional material layer.

Abstract: An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

Abstract: A reflective optical device has an insulation layer, a lattice group, a rear surface electrode, and a voltage application unit. Lattice group is composed of a plurality of lattices including a lattice and a lattice. Each of the plurality of lattices has a structure in which dielectric layer and graphene layer are laminated. Voltage application unit has a function of individually applying a voltage to each of lattice group. Voltage application unit includes a voltage application unit to apply a first voltage to lattice, and a voltage application unit to apply a second voltage to lattice.

Abstract: An electromagnetic wave detector includes: an insulating film having a first surface and a second surface facing the first surface; a first layer to perform photoelectric conversion by an incident electromagnetic wave and change in potential, the first layer being made of a first two-dimensional atomic layer material; and a second layer to receive the change in potential through the first insulating film and generate change in electrical quantity, the second layer being made of a second two-dimensional atomic layer material and provided on the first surface. In this manner, the sensitive electromagnetic wave detector detecting an incident electromagnetic wave as change in electrical quantity and having high response speed to an incident electromagnetic wave can be provided.

Abstract: The manufacturing method for the electronic device using graphene includes: forming a catalytic metal, forming a catalytic metal, forming a passivation film so as to expose upper surfaces of the catalytic metal and the catalytic metal, forming a graphene layer on the catalytic metal and catalytic metal that are exposed, forming a insulation film so as to cover the graphene layer, forming a substrate on the insulation film, and removing the catalytic metal.

Abstract: An electromagnetic wave detector 100 comprises: a substrate 5 having a front surface and a back surface; an insulating layer 4 formed of a rare earth oxide, which is provided on the front surface of the substrate 5; a pair of electrodes 2 provided on the insulating layer 4 so as to be arranged to face each other across a gap; and a two-dimensional material layer 1 provided on the insulating layer 4 so as to be electrically connected to the pair of electrodes 2. The rare earth oxide contains a base material made of an oxide of a first rare earth element, and a second rare earth element different from the first rare earth element, which is activated in the base material.

Abstract: An electromagnetic wave detector includes: an insulating film having a first surface and a second surface facing the first surface; a first layer to perform photoelectric conversion by an incident electromagnetic wave and change in potential, the first layer being made of a first two-dimensional atomic layer material; and a second layer to receive the change in potential through the first insulating film and generate change in electrical quantity, the second layer being made of a second two-dimensional atomic layer material and provided on the first surface. In this manner, the sensitive electromagnetic wave detector detecting an incident electromagnetic wave as change in electrical quantity and having high response speed to an incident electromagnetic wave can be provided.