Patents by Inventor Shoichiro Kurushima

Shoichiro Kurushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device
    Patent number: 8283720
    Abstract: A power semiconductor device includes: a first semiconductor layer; a second semiconductor layer and a third semiconductor layer provided in an upper portion of the first semiconductor layer and alternately arranged parallel to an upper surface of the first semiconductor layer; a plurality of fourth semiconductor layers provided on the third semiconductor layer; a fifth semiconductor layer selectively formed in an upper surface of each of the fourth semiconductor layers; a control electrode; a gate insulating film; a first main electrode provided on a lower surface of the first semiconductor layer; and a second main electrode provided on the fourth and the fifth semiconductor layers.
    Type: Grant
    Filed: March 18, 2008
    Date of Patent: October 9, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Wataru Saito, Syotaro Ono, Masakatsu Takashita, Yauto Sumi, Masaru Izumisawa, Wataru Sekine, Hiroshi Ohta, Shoichiro Kurushima
  • POWER SEMICONDUCTOR DEVICE
    Publication number: 20080246079
    Abstract: A power semiconductor device includes: a first semiconductor layer; a second semiconductor layer and a third semiconductor layer provided in an upper portion of the first semiconductor layer and alternately arranged parallel to an upper surface of the first semiconductor layer; a plurality of fourth semiconductor layers provided on the third semiconductor layer; a fifth semiconductor layer selectively formed in an upper surface of each of the fourth semiconductor layers; a control electrode; a gate insulating film; a first main electrode provided on a lower surface of the first semiconductor layer; and a second main electrode provided on the fourth and the fifth semiconductor layers.
    Type: Application
    Filed: March 18, 2008
    Publication date: October 9, 2008
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Wataru Saito, Syotaro Ono, Masakatsu Takashita, Yauto Sumi, Masaru Izumisawa, Wataru Sekine, Hiroshi Ohta, Shoichiro Kurushima