Abstract: A solid-state imaging device includes a semiconductor substrate having a photodiode formed therein, and a lamination structure of an insulating film and a wiring. The solid-state imaging device includes a partition wall formed on a wiring layer, constituted by an inorganic material and formed in a portion corresponding to a portion provided between the adjacent photodiodes, and a color filter constituted by an organic material and formed between the adjacent partition walls. The solid-state imaging device includes an adhesion layer constituted by an organic material and formed between a side surface of the partition wall and the color filter. An adhesive property of the adhesion layer to the color filter is higher than that of the partition wall to the color filter, and an adhesive property of the adhesion layer to the partition wall is higher than an adhesive property of the color filter to the partition wall.

Abstract: There are provided semiconductor substrate, ground layer formed on semiconductor substrate and having an upper surface corresponding to pixel region, the upper surface being lower than an upper surface corresponding to peripheral circuit region, a plurality of color filters disposed two-dimensionally on the upper surface corresponding to pixel region in ground layer, and partition wall provided between color filters. In a section which is orthogonal to the upper surface corresponding to pixel region in ground layer, an occupied area of partition wall provided in outer portion disposed in contact with peripheral circuit region is smaller than that of partition wall provided in central portion of pixel region.

Abstract: The present invention provides a solid-state imaging device comprising: a semiconductor substrate having a pixel region and a peripheral circuit region; a multilayer wiring layer including layers of wiring and an interlayer film interposed therebetween, and disposed above the semiconductor substrate to cover the pixel region and the peripheral circuit region except areas above the photoelectric conversion elements; a waveguide member filling the areas above the photoelectric conversion elements (waveguides) and covering the multilayer wiring layer at least within the pixel region; and an optical structure (composed of a color filter material and a lens material) disposed above the waveguide member within the pixel region, wherein a groove is formed by removing a portion of the waveguide member from an area within the pixel region that is in a border between the pixel region and the peripheral circuit region.

Abstract: There are provided semiconductor substrate, ground layer formed on semiconductor substrate and having an upper surface corresponding to pixel region, the upper surface being lower than an upper surface corresponding to peripheral circuit region, a plurality of color filters disposed two-dimensionally on the upper surface corresponding to pixel region in ground layer, and partition wall provided between color filters. In a section which is orthogonal to the upper surface corresponding to pixel region in ground layer, an occupied area of partition wall provided in outer portion disposed in contact with peripheral circuit region is smaller than that of partition wall provided in central portion of pixel region.

Abstract: A solid-state imaging device includes a semiconductor substrate having a photodiode formed therein, and a lamination structure of an insulating film and a wiring. The solid-state imaging device includes a partition wall formed on a wiring layer, constituted by an inorganic material and formed in a portion corresponding to a portion provided between the adjacent photodiodes, and a color filter constituted by an organic material and formed between the adjacent partition walls. The solid-state imaging device includes an adhesion layer constituted by an organic material and formed between a side surface of the partition wall and the color filter. An adhesive property of the adhesion layer to the color filter is higher than that of the partition wall to the color filter, and an adhesive property of the adhesion layer to the partition wall is higher than an adhesive property of the color filter to the partition wall.

Abstract: The present invention provides a solid-state imaging device comprising: a semiconductor substrate having a pixel region and a peripheral circuit region; a multilayer wiring layer including layers of wiring and an interlayer film interposed therebetween, and disposed above the semiconductor substrate to cover the pixel region and the peripheral circuit region except areas above the photoelectric conversion elements; a waveguide member filling the areas above the photoelectric conversion elements (waveguides) and covering the multilayer wiring layer at least within the pixel region; and an optical structure (composed of a color filter material and a lens material) disposed above the waveguide member within the pixel region, wherein a groove is formed by removing a portion of the waveguide member from an area within the pixel region that is in a border between the pixel region and the peripheral circuit region.