Abstract: This method for manufacturing a reactor (10) includes: an assembly manufacturing step for assembling a core-coil assembly provided with a reactor core (20), which comprises an inner-side core part that extends in a first direction and an outer-side core part that extends in a second direction and is linked to the inner-side core part, and a coil (30) that can be disposed around the inner-side core part with a gap therebetween and is wound in a tubular shape extending in the first direction, the external dimensions of the coil (30) in a third direction being configured to correspond to the external dimensions of the outer-side core part in the third direction; an installation step for installing the core-coil assembly in a mold in an orientation in which the third direction extends upward and downward so that the positon of the lowermost part of the coil (30) in the third direction and the position of the lowermost part of the outer-side core part coincide; and an injection molding step for filling at least th

Abstract: Provided is a reactor core (20) comprising: a plurality of inner core portions (21) that includes a plurality of first powder magnetic cores (23), the plurality of first powder magnetic cores (23) being arranged in line in a first direction (Dx), and each having a first end surface (21ta) and a second end surface (21tb) at both ends in the first direction (Dx); and two outer core portions (22) that includes second powder magnetic cores (26), the external dimensions of which correspond to the first powder magnetic cores 23, and that are respectively arranged so as to extend over the first end surfaces (21ta) adjacent in a second direction (Dy) which intersects with the first direction (Dx) and the second end surfaces (21tb) adjacent in the second direction.

Abstract: A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance consisting of copper and impurities, wherein the impurities are controlled to include a total of 40 ppm or less of metallic impurities, 10 ppm or less of oxygen, 5 ppm or less of nitrogen, 5 ppm or less of hydrogen, and 10 ppm or less of carbon.

Abstract: A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance consisting of copper and impurities, wherein the impurities are controlled to include a total of 40 ppm or less of metallic impurities, 10 ppm or less of oxygen, 5 ppm or less of nitrogen, 5 ppm or less of hydrogen, and 10 ppm or less of carbon.

Abstract: A platen for electrostatic wafer clamping apparatus comprising a platen body of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen has a relatively large electrostatic capacitance due to the diffusion of the conductive grains with the result that the platen provides an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage, to eliminate any residual voltage on the platen and to increase the speed of wafer release. The grains of electrically conductive material are present in an amount of from about 2.5 percent to about 15.0 percent of the volume of the platen body, and the grains of electrically conductive material are selected from the group consisting of carbonated transition metals, nitrified transition metals and carbonated grains.

Abstract: A platen for electrostatic wafer clamping apparatus comprising a platen body of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen has a relatively large electrostatic capacitance due to the diffusion of the conductive grains with the result that the platen provides an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage, to eliminate any residual voltage on the platen and to increase the speed of wafer release. The grains of electrically conductive material are present in an amount of from about 2.5 percent to about 15.0 percent of the volume of the platen body, and the grains of electrically conductive material are selected from the group consisting of carbonated transition metals, nitrified transition metals and carbonated grains.

Abstract: In a single wafer cleaning system of a single tank type in which wafers are one by one sprayed with chemical liquid and rinse water used in a successive order, not only can waste water is recovered while being classified into chemical liquid waste water and rinse waste water, but also the rinse waste water is recovered while being classified into cloudy rinse waste water and clean rinse waste water.