Abstract: A main control board is disposed in an accommodation space, is connected to an interactive display portion, and controls at least the interactive display portion. A power supply board is disposed in an accommodation space, is connected to the interactive display portion and the main control board, and supplies power to the interactive display portion and the main control board. A plug receiving portion is provided on a left plate which is one of a plurality of side plates, is connected to the power supply board, and has connected thereto by the attraction force of a magnet, a magnet-type plug of a magnetic cord that can be connected to an external power supply.

Abstract: A main control board is disposed in an accommodation space, is connected to an interactive display portion, and controls at least the interactive display portion. A power supply board is disposed in an accommodation space, is connected to the interactive display portion and the main control board, and supplies power to the interactive display portion and the main control board. A plug receiving portion is provided on a left plate which is one of a plurality of side plates, is connected to the power supply board, and has connected thereto by the attraction force of a magnet, a magnet-type plug of a magnetic cord that can be connected to an external power supply.

Abstract: A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Abstract: A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Abstract: A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Abstract: A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Abstract: Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Abstract: A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a feedback light inhibition part is provided on a main-emitting-side end face, and effects of feedback light in the vicinity of lateral boundaries of the light emitting region are inhibited by the feedback light inhibition part.

Abstract: A vibration detection device that includes a light source that emits a laser beam; an interferometer, which includes two vibrating bodies that are capable of reflecting the laser beam, that splits the laser beam to cause interference patterns; and a detector that detects vibrations on the basis of the interference patterns.

Abstract: This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

Abstract: A laser beam multiplexer capable of easily multiplexing a plurality of laser beams is provided. A laser beam multiplexer includes a multiplexing element having a hollow portion with a sectional elliptical shape, in which the multiplexing element includes: a plurality of light-incident apertures guiding laser beams from outside toward one of two focal points of the hollow portion, a reflective layer arranged on a wall surface of the hollow portion, and multiplexing a plurality of incident laser beams while reflecting the plurality of laser beams, and a light-emitting aperture guiding laser beams multiplexed by the reflective layer toward outside.

Abstract: A laser diode device capable of obtaining high light efficiency and improving output by using an AlGaInN compound semiconductor as a material is provided. The laser diode device includes semiconductor layer which has an active layer and is made of a nitride Group III-V compound semiconductor containing at least one of aluminum (Al), gallium (Ga), and indium (In) among Group 3B elements and nitrogen (N) among Group 5B elements. The active layer has a strip-shaped light emitting region whose width W is from 5 ?m to 30 ?m, length L is from 300 ?m to 800 ?m, and output of laser light from the active layer is 200 mW or more.

Abstract: A laser beam multiplexer capable of easily multiplexing a plurality of laser beams is provided. A laser beam multiplexer includes a multiplexing element having a hollow portion with a sectional elliptical shape, in which the multiplexing element includes: a plurality of light-incident apertures guiding laser beams from outside toward one of two focal points of the hollow portion, a reflective layer arranged on a wall surface of the hollow portion, and multiplexing a plurality of incident laser beams while reflecting the plurality of laser beams, and a light-emitting aperture guiding laser beams multiplexed by the reflective layer toward outside.

Abstract: A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a feedback light inhibition part is provided on a main-emitting-side end face, and effects of feedback light in the vicinity of lateral boundaries of the light emitting region are inhibited by the feedback light inhibition part.

Abstract: This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

Abstract: A laser diode capable of effectively inhibiting effects of return light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a return light inhibition part is provided on a main-emitting-side end face, and effects of return light in the vicinity of lateral boundaries of the light emitting region are inhibited by the return light inhibition part.

Abstract: Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Abstract: This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

Abstract: A vibration detection device capable of improving detection sensitivity when optically performing vibration detection is provided. A vibration detection device includes: a light source emitting a laser beam; an interferometer including a vibrating body and a first reflection body both capable of reflecting the laser beam, and a second reflection body capable of at least partially reflecting the laser beam, the interferometer splitting the laser beam emitted from the light source into beams traveling along first and second optical paths, the interferometer causing interference between a reference beam reflected by the first reflection body in the first optical path and reflected beams multiply reflected between the vibrating body and the second reflection body in the second optical path to form interference patterns; and a detection means for detecting the vibration of the vibrating body on the basis of the formed interference patterns.

Abstract: A vibration detection device includes: a light source emitting a laser beam; an interferometer including a vibrating body and a reflecting body both capable of reflecting the laser beam, a polarizing beam splitter splitting a laser beam emitted from the light source into beams traveling along first and second optical paths, a first ¼ wave plate arranged between the polarizing beam splitter and the vibrating body in the first optical path, and a second ¼ wave plate arranged between the polarizing beam splitter and the reflecting body in the second optical path, the interferometer causing interference between a reflected beam reflected by the vibrating body and a reference beam reflected by the reflecting body to form a interference pattern; and a detection means quantizing the vibration of the vibrating body on the basis of the formed interference pattern to detect the vibration.