Patents by Inventor Shoji Honda
Shoji Honda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230328957Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.Type: ApplicationFiled: September 2, 2022Publication date: October 12, 2023Applicant: Kioxia CorporationInventors: Masaya TODA, Tomoki ISHIMARU, Ha HOANG, Kota TAKAHASHI, Kazuhiro MATSUO, Takafumi OCHIAI, Shoji HONDA, Kenichiro TORATANI, Kiwamu SAKUMA, Taro SHIOKAWA, Mutsumi OKAJIMA
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Publication number: 20230309301Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.Type: ApplicationFiled: June 20, 2022Publication date: September 28, 2023Applicant: Kioxia CorporationInventors: Yuta KAMIYA, Kenichiro TORATANI, Kazuhiro MATSUO, Shoji HONDA, Takuya HIROHASHI, Borong CHEN, Kota TAKAHASHI
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Publication number: 20220310640Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.Type: ApplicationFiled: August 30, 2021Publication date: September 29, 2022Applicant: Kioxia CorporationInventors: Natsuki FUKUDA, Ryota NARASAKI, Takashi KURUSU, Yuta KAMIYA, Kazuhiro MATSUO, Shinji MORI, Shoji HONDA, Takafumi OCHIAI, Hiroyuki YAMASHITA, Junichi KANEYAMA, Ha HOANG, Yuta SAITO, Kota TAKAHASHI, Tomoki ISHIMARU, Kenichiro TORATANI
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Publication number: 20120250713Abstract: A correction circuit includes: a temperature rise derivation section which derives a temperature rise amount of a first channel of a multi-channel surface-emitting laser array due to the heating by at least one or a plurality of second channels adjacent to the first channel out of all channels included in the laser array; and a first correction section which corrects a waveform of an electric current pulse which is output from an electric current source capable of independently driving the laser array for each channel, to the first channel, based on the temperature rise amount derived by the temperature rise derivation section.Type: ApplicationFiled: March 8, 2012Publication date: October 4, 2012Applicant: SONY CORPORATIONInventors: Osamu Maeda, Katsuhisa Daio, Shoji Honda
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Patent number: 7889770Abstract: A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and a semiconductor laser beam element is disposed at the bottom part of the inner wall surfaces of the groove whereby the radiating capability of the semiconductor laser beam device can be increased by increasing the volume of the heat sink part, and the element can be protected by the groove.Type: GrantFiled: September 13, 2007Date of Patent: February 15, 2011Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventor: Shoji Honda
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Patent number: 7777234Abstract: A light-receiving element has a photodiode formed in part of the top surface of a semiconductor substrate so as to function as a light-receiving region, and has a light-emitting element mount electrode formed on top of the semiconductor substrate where the light-receiving region is not formed. A high concentration impurity layer is formed below the top surface of the semiconductor substrate along the peripheral edges of the light-emitting element mount electrode. This helps prevent the voltage applied to the light-emitting element mount electrode from influencing the output of the light-receiving element. Alternatively, a photonic semiconductor device has a light-emitting element and a light-receiving element, and has the light-receiving region of the light-receiving element formed parallel to the direction in which the light-emitting element emits light.Type: GrantFiled: September 27, 2001Date of Patent: August 17, 2010Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventors: Susumu Nishimura, Shoji Honda, Koji Ueyama
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Patent number: 7508854Abstract: A semiconductor laser device of the present invention is provided with a base portion (2) having a horizontal top surface (S), a heat sink portion (3) that has a vertical element mount surface (7) and is located above the top surface (S) of the base portion (2), and a semiconductor laser element (4) that is fixed to the element mount surface (7). There is formed a depression (9) in the base portion (2) located immediately below the semiconductor laser element (4) so as to receive part of the semiconductor laser element (4) disposed in the depression (9). The element mount surface (7) is located inward of the inner side surface of the depression (9).Type: GrantFiled: November 11, 2004Date of Patent: March 24, 2009Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventor: Shoji Honda
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Publication number: 20080013576Abstract: A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and a semiconductor laser beam element is disposed at the bottom part of the inner wall surfaces of the groove whereby the radiating capability of the semiconductor laser beam device can be increased by increasing the volume of the heat sink part, and the element can be protected by the groove.Type: ApplicationFiled: September 13, 2007Publication date: January 17, 2008Applicants: SANYO ELECTRIC CO., LTD., TOTTORI SANYO ELECTRIC CO., LTD.Inventor: Shoji Honda
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Patent number: 7280572Abstract: A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and a semiconductor laser beam element is disposed at the bottom part of the inner wall surfaces of the groove whereby the radiating capability of the semiconductor laser beam device can be increased by increasing the volume of the heat sink part, and the element can be protected by the groove.Type: GrantFiled: March 24, 2003Date of Patent: October 9, 2007Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventor: Shoji Honda
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Publication number: 20060013275Abstract: A semiconductor laser device 1 has, arranged inside an airtight-sealed package 2, a semiconductor laser element 3 having an active region made of one material selected from the group consisting of an AlGaAs-based crystal, an AlGaInP-based crystal, an AlGaN-based crystal, and an InGaN-based crystal. The atmospheric gas inside the package 2 contains oxygen. The semiconductor laser element 3 has a dielectric oxide film formed on the laser emission surface thereof. The atmospheric gas is a mixture of oxygen and nitrogen, with an oxygen content of 20% or more.Type: ApplicationFiled: April 23, 2004Publication date: January 19, 2006Inventors: Massashi Watanabe, Shoji Honda, Yasuhiro Iwamura, Gen Shimizu, Tetsuro Inoue
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Publication number: 20050089070Abstract: A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and a semiconductor laser beam element is disposed at the bottom part of the inner wall surfaces of the groove whereby the radiating capability of the semiconductor laser beam device can be increased by increasing the volume of the heat sink part, and the element can be protected by the groove.Type: ApplicationFiled: March 24, 2003Publication date: April 28, 2005Inventor: Shoji Honda
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Patent number: 6885076Abstract: A semiconductor laser device includes a semiconductor laser element, a lead having an element disposing section where elements are disposed and a resin bonded to the lead. The lead has a thick portion and a thin portion with the thick portion being formed to extend at least in the direction of the width of the resin to cover a region having a length equal to or greater then the width of the resin. A semiconductor laser device has a semiconductor laser element, a lead having an element mount portion on which the semiconductor laser element is mounted and a resin maintained in intimate contact with the lead. The lead has a thicker portion and a thinner portion. The thicker portion is formed to extend in the direction of the width of the resin over a width equal to or greater than the width of the resin.Type: GrantFiled: June 21, 2001Date of Patent: April 26, 2005Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventors: Shoji Honda, Yasuhiro Watanabe, Yasuyuki Bessho, Kentarou Tanaka
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Publication number: 20030178711Abstract: A semiconductor laser device comprising a semiconductor laser element, a lead frame having an element disposing section where elements are disposed, and a resin bonded to the lead frame, wherein the lead frame has a thick portion and a thin portion, the thick portion being formed to extend at least in the direction of the width of the resin to cover a region having a length equal to or greater than this width. Thereby, the thick-walled construction of the lead frame improves heat dissipation and strength. Also, it stabilizes the positioning reference plane and improves the accuracy of attachment.Type: ApplicationFiled: January 16, 2003Publication date: September 25, 2003Inventors: Shoji Honda, Yasuhiro Watanabe, Yasuyuki Bessho, Kentarou Tanaka
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Publication number: 20030173569Abstract: A light-receiving element has a photodiode formed in part of the top surface of a semiconductor substrate so as to function as a light-receiving region, and has a light-emitting element mount electrode formed on top of the semiconductor substrate where the light-receiving region is not formed. A high concentration impurity layer is formed below the top surface of the semiconductor substrate along the peripheral edges of the light-emitting element mount electrode. This helps prevent the voltage applied to the light-emitting element mount electrode from influencing the output of the light-receiving element.Type: ApplicationFiled: March 18, 2003Publication date: September 18, 2003Inventors: Susumu Nishimura, Shoji Honda, Koji Ueyama
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Patent number: 5619519Abstract: A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.Type: GrantFiled: January 13, 1995Date of Patent: April 8, 1997Assignee: Sanyo Electric Co. Ltd.Inventors: Hiroki Hamada, Shoji Honda, Masayuki Shono, Takao Yamaguchi
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Patent number: 5610096Abstract: A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.Type: GrantFiled: September 29, 1995Date of Patent: March 11, 1997Assignee: Sanyo Electric Co., Ltd.Inventors: Keiichi Yodoshi, Akira Ibaraki, Masayuki Shono, Shoji Honda, Takatoshi Ikegami, Nobuhiko Hayashi, Koutarou Furusawa, Atushi Tajiri, Toru Ishikawa, Kenichi Matsukawa, Teruaki Miyake, Takenori Goto, Mitsuaki Matsumoto, Daisuke Ide, Yasuyuki Bessho
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Patent number: 5586136Abstract: A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a <011> direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.Type: GrantFiled: July 1, 1994Date of Patent: December 17, 1996Assignee: Sanyo Electric Co., Ltd.Inventors: Shoji Honda, Masayuki Shono, Yasuyuki Bessho, Ryoji Hiroyama, Hiroyuki Kase, Takatoshi Ikegami
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Patent number: 5555271Abstract: On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.Type: GrantFiled: December 23, 1994Date of Patent: September 10, 1996Assignee: Sanyo Electric Co., Ltd.Inventors: Shoji Honda, Masayuki Shono, Ryoji Hiroyama, Yasuyuki Bessho, Hiroyuki Kase, Toyozo Nishida, Takahiro Uetani, Junko Suzuki
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Patent number: 5506170Abstract: A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.Type: GrantFiled: December 28, 1994Date of Patent: April 9, 1996Assignee: Sanyo Electric Co., Ltd.Inventors: Keiichi Yodoshi, Akira Ibaraki, Masayuki Shono, Shoji Honda, Takatoshi Ikegami, Nobuhiko Hayashi, Koutarou Furusawa, Atushi Tajiri, Toru Ishikawa, Kenichi Matsukawa, Teruaki Miyake, Takenori Goto, Mitsuaki Matsumoto, Daisuke Ide, Yasuyuki Bessho
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Patent number: 5416790Abstract: A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.Type: GrantFiled: November 4, 1993Date of Patent: May 16, 1995Assignee: Sanyo Electric Co., Ltd.Inventors: Keiichi Yodoshi, Akira Ibaraki, Masayuki Shono, Shoji Honda, Takatoshi Ikegami, Nobuhiko Hayashi, Koutarou Furusawa, Atushi Tajiri, Toru Ishikawa, Kenichi Matsukawa, Teruaki Miyake, Takenori Goto, Mitsuaki Matsumoto, Daisuke Ide, Yasuyuki Bessho