Abstract: Provided is an apparatus including: first and second photoelectric converting portions; a charge detecting portion; a transistor outputting a pixel signal first and second sampling and holding capacitors; an amplifier; and a controlling unit controlling gain in first and second mode. The pixel signal is one of: a first signal at time of resetting of charge; a second signal including a charge component of the first photoelectric converting portion and a noise component; and a third signal including the first component, a charge component of the second photoelectric converting portion and a noise component. In the first mode, the controlling unit uses a first gain. In the second mode, the controlling unit uses second gain to the first signal, third gain to the third signal of the first sampling and holding capacitor, and second gain to the third signal of the second sampling and holding capacitor.

Abstract: A photoelectric conversion apparatus includes first and second signal lines, first and second circuits, and a switch. Signals based on electric charges generated in first and second photoelectric conversion portions are to be read out to the first and second signal lines, respectively. The first circuit includes a first input unit to which the first signal line is connected. The first circuit is configured to perform processing of a signal input to the first input unit, with a first gain. The second circuit includes a second input unit to which the second signal line is connected. The second circuit is configured to perform processing of a signal input to the second input unit. The switch is configured to perform switching between a connected state and a disconnected state between the first signal line and the second signal line.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: A solid-state imaging device includes a pixel that outputs a pixel signal of an analog signal, a readout unit that converts the pixel signal into a digital signal to generate a digital pixel signal, a memory unit that stores the digital pixel signal, and a first inspection signal output unit that outputs a first inspection signal to the memory unit such that the memory unit stores the first inspection signal. The first inspection signal stored in the memory unit is output from the memory unit in a period after output of the digital pixel signal of a frame ends and before output of the digital pixel signal of a next frame starts.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.

Abstract: In a first operation mode, signals are read from pixels including ranging pixels in a pixel array and ranging and image generation are performed based on the read signals. In a second operation mode, signals are read from the pixels excluding the ranging pixels and exposure is controlled based on the read signals.

Abstract: In a first operation mode, signals are read from pixels including ranging pixels in a pixel array and ranging and image generation are performed based on the read signals. In a second operation mode, signals are read from the pixels excluding the ranging pixels and exposure is controlled based on the read signals.

Abstract: In a first operation mode, signals are read from pixels including ranging pixels in a pixel array and ranging and image generation are performed based on the read signals. In a second operation mode, signals are read from the pixels excluding the ranging pixels and exposure is controlled based on the read signals.

Abstract: In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which signals from the pixels belonging to the pixel rows of the second group are output.

Abstract: A solid-state imaging apparatus has a pixel array in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a plurality of column signal lines are arranged, wherein each of the plurality of pixels includes a photoelectric converter including a first well formed in a semiconductor substrate and having a first conductivity type, and an impurity region arranged in the first well and having a second conductivity type different from the first conductivity type, and an in-pixel readout circuit which outputs, to the column signal line, a signal corresponding to charges generated in the photoelectric converter, the in-pixel readout circuit including a circuit element arranged in a second well having the first conductivity type, and wherein the first well and the second well are isolated by a semiconductor region having the second conductivity type.

Abstract: An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array.

Abstract: A solid-state imaging apparatus including pixels each including a photoelectric conversion element, and a light shielding layer covering the photoelectric conversion element is provided. For each of the photoelectric conversion elements, the light shielding layer includes a light shielding portion which shields a portion of incident light to the photoelectric conversion element, and an aperture which passes another portion of the incident light. The pixels include first and second pixels which have different areas on a planar view of the photoelectric conversion element. The area of the photoelectric conversion element in the first pixel is larger than the area of the photoelectric conversion element in the second pixel on the planar view. An area of the light shielding portion included in the first pixel is larger than an area of the light shielding portion included in the second pixel.

Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of unit cells are arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, and the pixel comprising a photoelectric conversion element and an in-pixel readout circuit which outputs a signal corresponding to charges generated in the photoelectric conversion element, power is supplied to the plurality of unit cells via a power supply line and a ground line, and at least one of the plurality of unit cells includes at least a part of a capacitive element having a first electrode connected to the power supply line and a second electrode connected to the ground line.

Abstract: A solid-state imaging apparatus capable of suppressing blooming and color mixing includes a plurality of pixels, each including a photoelectric converting portion and a transferring portion for transferring signal electrons from the photoelectric converting portion, wherein a plurality of the photoelectric converting portions is formed in a first conductivity type well region formed on the semiconductor substrate; a second conductivity type first impurity region is arranged between the adjacent photoelectric converting portions; a first conductivity type second impurity region having an impurity concentration higher than that of the well region is arranged between the first impurity region and each of the photoelectric converting portions; and a first conductivity type third impurity region having an impurity concentration higher than that of the well region and decreasing from the semiconductor substrate toward the surface direction of the apparatus between the semiconductor substrate and the first impurity

Abstract: In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which the signals from the pixels belonging to the pixel rows of the second group are output.

Abstract: In a first operation mode, signals are read from pixels including ranging pixels in a pixel array and ranging and image generation are performed based on the read signals. In a second operation mode, signals are read from the pixels excluding the ranging pixels and exposure is controlled based on the read signals.