Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).

Abstract: The present invention is a water faucet device (2a) connected to pipes and buried in a mounting surface (W1), including: a water conveying portion main body (20) having an inflow-side connecting portion (20a), an outflow-side connecting portion (20b), and double pipe connecting portions (20c, 20d) respectively communicating with these; a push valve (30) opened and closed by a pushing operation; a valve receiving main body, positioned at a predetermined position relative to the mounting surface, and having double pipe joining portions (26a, 26b) slidably joined to a double pipe connecting portion in a direction approximately perpendicular to the mounting surface, and a push valve receiving recess (26c) for receiving the push valve; and a push button unit (10a) disposed on the mounting surface, furnished with a push button (12b) for pushing the operating portion of a push valve.

Abstract: The present invention is a water faucet device (2a) connected to pipes and buried in a mounting surface (W1), including: a water conveying portion main body (20) having an inflow-side connecting portion (20a), an outflow-side connecting portion (20b), and double pipe connecting portions (20c, 20d) respectively communicating with these; a push valve (30) opened and closed by a pushing operation; a valve receiving main body, positioned at a predetermined position relative to the mounting surface, and having double pipe joining portions (26a, 26b) slidably joined to a double pipe connecting portion in a direction approximately perpendicular to the mounting surface, and a push valve receiving recess (26c) for receiving the push valve; and a push button unit (10a) disposed on the mounting surface, furnished with a push button (12b) for pushing the operating portion of a push valve.

Abstract: Disclosed is a water discharge device (1) provided with a device body (2) and a connector (4) and adapted to be attached to a feedwater pipe (6). The water discharge device comprises fixing means (8) for fixing the device body to the connector at a given installation position. The connector has a feedwater-pipe-joining portion (4a) adapted to be joined to the feedwater pipe, and a connector-side engaging thread portion (4b), and the device body has a body-side engaging thread portion (14) positioned in such a manner as to be engaged with the connector-side engaging thread portion once during an operation of attaching the device body to the connector, and located beyond the connector-side engaging thread portion after the device body is fixed at the installation position. The water discharge device of the present invention can reliably prevent falling-off of the device body.

Abstract: It is an object to provide a novel water discharging apparatus capable of rapidly enhancing an outer appearance and a cleaning property and enjoying a plurality of water discharging configurations.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: Disclosed is a showerhead (1) capable of preventing damages in major or peripheral components and water leakage even if it is increased in size. The showerhead comprises a lower plate (2) formed with a plurality of discharging holes (2c) for discharging shower water therethrough, an upper plate (4) connected to the lower plate and formed with a water inlet port (4c), and a channel-defining member (6) disposed between the lower and upper plates to define an effective channel (6c, 6d) for allowing hot water entered between the lower and upper plates from the water inlet port to be led to each of the discharging holes, and an ineffective channel, so as to reduce a pressure-receiving area of the lower or upper plate to be subjected to a water pressure.

Abstract: A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a conductive layer and a connecting member. The method includes: forming the semiconductor part on a semiconductor substrate so that a cell portion is provided; forming the conductive layer on the substrate; forming a first resist layer to cover a part of the conductive layer corresponding to the cell portion; etching the conductive layer with the first resist layer as a mask so that a first conductive layer is provided; removing the first resist layer and forming a second conductive layer to cover a surface and an edge of the first conductive layer. The second conductive layer has a Young's modulus equal to or larger than the semiconductor substrate.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: Disclosed is a water discharge device (1) provided with a device body (2) and a connector (4) and adapted to be attached to a feedwater pipe (6). The water discharge device comprises fixing means (8) for fixing the device body to the connector at a given installation position. The connector has a feedwater-pipe-joining portion (4a) adapted to be joined to the feedwater pipe, and a connector-side engaging thread portion (4b), and the device body has a body-side engaging thread portion (14) positioned in such a manner as to be engaged with the connector-side engaging thread portion once during an operation of attaching the device body to the connector, and located beyond the connector-side engaging thread portion after the device body is fixed at the installation position. The water discharge device of the present invention can reliably prevent falling-off of the device body.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A power element package includes a semiconductor chip, radiating members, a mold resin member, a lead terminal for control signals, and lead terminals for large electric current. On a heat accepting surface of the radiating member, an insulating layer and a conductive layer are disposed. The lead terminal for control signals is electrically connected with a gate of the semiconductor chip through the conductive layer. An emitter of the semiconductor chip is electrically connected through a solder connection member with a non-insulating portion of the heat accepting surface.

Abstract: A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.

Abstract: A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.

Abstract: A power MOS transistor formed of an array of source cells and drain cells on an IC chip substrate has a plurality of substrate contact cells, each formed external to the source cells, having respective substrate potential-setting electrodes to which an externally supplied substrate bias voltage can be applied, enabling the substrate potential to be set independently of the source potential of the transistor. It thereby becomes possible to modify the threshold voltage of the transistor or maintain a constant potential difference between the substrate potential and that of a gate input signal. Since the requirement for a substrate contact region within each source cell is eliminated, and the number of substrate contact cells can be fewer than that of the source cells, the chip area occupied by the transistor can be reduced by comparison with a prior art configuration providing such a substrate potential control capability.

Abstract: Disclosed is a showerhead (1) capable of preventing damages in major or peripheral components and water leakage even if it is increased in size. The showerhead comprises a lower plate (2) formed with a plurality of discharging holes (2c) for discharging shower water therethrough, an upper plate (4) connected to the lower plate and formed with a water inlet port (4c), and a channel-defining member (6) disposed between the lower and upper plates to define an effective channel (6c, 6d) for allowing hot water entered between the lower and upper plates from the water inlet port to be led to each of the discharging holes, and an ineffective channel, so as to reduce a pressure-receiving area of the lower or upper plate to be subjected to a water pressure.

Abstract: A semiconductor device includes: a semiconductor substrate; an aluminum electrode disposed on the surface of the substrate; a protection film disposed on the aluminum electrode and having an opening; and a metallic electrode disposed on a surface of the aluminum electrode through the opening of the protection film. The surface of the aluminum electrode includes a concavity. The concavity has an opening side and a bottom side, which is wider than the opening side. In the device, a concavity and a convexity of the metallic electrode become small.

Abstract: A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.

Abstract: Semiconductor equipment includes: a semiconductor device; a pair of upper and lower heat radiation plates; and a heat radiation block. The heat radiation block has a planar shape, which is smaller than a planer shape of the semiconductor device. The semiconductor device includes a heat generation portion facing the heat radiation block. The heat generation portion has a periphery edge, which is determined such that a distance between the periphery edge of the heat generation portion and a periphery edge of the heat radiation block is equal to or shorter than 1.0 mm.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.