Abstract: A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

Abstract: A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a fÀ-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.

Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.

Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Abstract: There are provided the steps of exposing a surface of a copper (Cu) wiring layer formed over a semiconductor substrate to a plasma of a gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas, exposing the surface of the copper (Cu) wiring layer to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a &bgr;-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), and forming a Cu diffusion preventing insulating film on the copper (Cu) wiring layer.

Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.

Abstract: A process gas containing any one of N2 or N2O is plasmanized and then a surface of a copper wiring layer is exposed to the plasmanized process gas, whereby a surface layer portion of a copper wiring layer is reformed and made into a copper diffusion preventing layer. According to this method, a noble semiconductor device can be provided, in which, along with increasing the operation speed, the copper diffusion is suppressed.

Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27,or28 on a substrate targeted for film formation.

Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.

Abstract: The present invention relates to a method of cleaning a surface of a substrate employed prior to film formation by using the CVD method which uses a reaction gas containing an ozone containing gas which contains ozone (O.sub.3) in oxygen (O.sub.2) and tetraethylorthosilicate (TEOS). The substrate surface cleaning method comprises the steps of oxidizing particles 13 by contacting a pre-process gas containing ozone 15 to a surface 12 of a substrate 11 on which the particles 13 are present, and removing the particles 13 by heating the substrate 11 to exceed a decomposition point of oxide 13a of the particles 13.