Patents by Inventor Shoji Ozoe
Shoji Ozoe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9835507Abstract: A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.Type: GrantFiled: August 1, 2014Date of Patent: December 5, 2017Assignee: DENSO CORPORATIONInventors: Takahiro Kawano, Takashi Katsumata, Hisanori Yokura, Shoji Ozoe, Hiroaki Tanaka
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Publication number: 20160187215Abstract: A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.Type: ApplicationFiled: August 1, 2014Publication date: June 30, 2016Applicant: DENSO CORPORATIONInventors: Takahiro KAWANO, Takashi KATSUMATA, Hisanori YOKURA, Shoji OZOE, Hiroaki TANAKA
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Semiconductor device including a plurality of chips and method of manufacturing semiconductor device
Patent number: 8018008Abstract: A semiconductor device includes a first chip and a second chip. The first chip includes a first conductivity type channel power MOSFET. The second chip includes a second conductivity type channel power MOSFET. The first chip and the second chip are integrated in such a manner that a second-surface drain electrode of the first chip and a second-surface drain electrode of the second chip face to each other and are electrically coupled with each other through a conductive material.Type: GrantFiled: April 21, 2009Date of Patent: September 13, 2011Assignee: DENSO CORPORATIONInventor: Shoji Ozoe -
Patent number: 7800195Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.Type: GrantFiled: February 26, 2008Date of Patent: September 21, 2010Assignee: DENSO CORPORATIONInventors: Shoji Ozoe, Shoji Mizuno, Takaaki Aoki, Tomofusa Shiga
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Semiconductor device including a plurality of chips and method of manufacturing semiconductor device
Publication number: 20090278167Abstract: A semiconductor device includes a first chip and a second chip. The first chip includes a first conductivity type channel power MOSFET. The second chip includes a second conductivity type channel power MOSFET. The first chip and the second chip are integrated in such a manner that a second-surface drain electrode of the first chip and a second-surface drain electrode of the second chip face to each other and are electrically coupled with each other through a conductive material.Type: ApplicationFiled: April 21, 2009Publication date: November 12, 2009Applicant: DESNO CORPORATIONInventor: Shoji Ozoe -
Patent number: 7420246Abstract: A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.Type: GrantFiled: May 30, 2006Date of Patent: September 2, 2008Assignee: DENSO CORPORATIONInventors: Shoji Ozoe, Tomofusa Shiga, Yoshifumi Okabe, Takaaki Aoki, Takeshi Fukazawa, Kimiharu Kayukawa
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Publication number: 20080203389Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.Type: ApplicationFiled: February 26, 2008Publication date: August 28, 2008Applicant: DENSO CORPRORATIONInventors: Shoji Ozoe, Shoji Mizuno, Takaaki Aoki, Tomofusa Shiga
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Publication number: 20060273351Abstract: A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.Type: ApplicationFiled: May 30, 2006Publication date: December 7, 2006Applicant: DENSO CORPORATIONInventors: Shoji Ozoe, Tomofusa Shiga, Yoshifumi Okabe, Takaaki Aoki, Takeshi Fukazawa, Kimiharu Kayukawa
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Patent number: 6287885Abstract: In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.Type: GrantFiled: May 6, 1999Date of Patent: September 11, 2001Assignee: Denso CorporationInventors: Hiroshi Muto, Tsuyoshi Fukada, Masakazu Terada, Hiroshige Sugito, Masakazu Kanosue, Shinji Yoshihara, Shoji Ozoe, Seiji Fujino, Minekazu Sakai, Minoru Murata, Yukihiro Takeuchi, Seiki Aoyama, Toshio Yamamoto, Kazushi Asami