Patents by Inventor Shoji Sogo

Shoji Sogo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6036775
    Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
    Type: Grant
    Filed: July 21, 1999
    Date of Patent: March 14, 2000
    Assignee: NGK Insulators, Ltd.
    Inventors: Minoru Imaeda, Akihiko Honda, Katsuhiro Imai, Yuichiro Imanishi, Nobuyuki Kokune, Shoji Sogo, Kazuaki Yamaguchi, Tetsuo Taniuchi
  • Patent number: 5961720
    Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
    Type: Grant
    Filed: August 11, 1997
    Date of Patent: October 5, 1999
    Assignee: NGK Insulators, Ltd.
    Inventors: Minoru Imaeda, Akihiko Honda, Katsuhiro Imai, Yuichiro Imanishi, Nobuyuki Kokune, Shoji Sogo, Kazuaki Yamaguchi, Tetsuo Taniuchi
  • Patent number: 5690734
    Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
    Type: Grant
    Filed: March 19, 1996
    Date of Patent: November 25, 1997
    Assignee: NGK Insulators, Ltd.
    Inventors: Minoru Imaeda, Akihiko Honda, Katsuhiro Imai, Yuichiro Imanishi, Nobuyuki Kokune, Shoji Sogo, Kazuaki Yamaguchi, Tetsuo Taniuchi
  • Patent number: 5603762
    Abstract: A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overcooled state. The substrate of the oxide type single crystal is contacted with the melt held in a first furnace, and the substrate of the oxide type single crystal is held inside a second furnace separated from said first furnace, and the temperature of the substrate is adjusted in the second furnace. An oxide type single crystal film-producing apparatus is also disclosed.
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: February 18, 1997
    Assignee: NGK Insulators, Ltd.
    Inventors: Nobuyuki Kokune, Kazuaki Yamaguchi, Shoji Sogo, Ryuichi Ohuchi, Tatsuo Kawaguchi, Minoru Imaeda