Abstract: A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

Abstract: A semiconductor device includes an interlayer insulating film, and a wiring of an uppermost layer arranged on the interlayer insulating film, wherein the wiring includes a seed layer arranged on the interlayer insulating film and a wiring body portion arranged on the seed layer, wherein a constituent material of the wiring body portion is copper or a copper alloy, and wherein a trench is formed in an upper surface of the interlayer insulating film along an outer edge of the interlayer insulating film in a plan view.

Abstract: A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

Abstract: A semiconductor device includes: a semiconductor chip having an element forming surface; an insulating layer formed on the element forming surface; a pad wiring layer including a first conductive layer formed on the insulating layer and containing a first conductive material and a second conductive layer formed on the first conductive layer and containing a second conductive material different from the first conductive material, wherein the second conductive layer includes an eaves portion protruding outward with respect to an end surface of the first conductive layer; a bonding member bonded to the pad wiring layer and supplying electric power to an element of the element forming surface; and a coating insulating film selectively formed on the insulating layer below the eaves portion, exposing an upper surface of the insulating layer to a peripheral region of the pad wiring layer, and covering the end surface of the first conductive layer.

Abstract: A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

Abstract: An optical module includes: a first lens having a first principal surface and a second principal surface; and a second lens having a third principal surface and a fourth principal surface, the first principal surface is configured by a flat surface, and on the second principal surface, a concave lens array having a plurality of concave lenses is formed, and on each of the third principal surface and the fourth principal surface, a convex lens array having a plurality of convex lenses is formed, and the second principal surface and the third principal surface are arranged in such a way as to face each other.

Abstract: A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

Abstract: A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

Abstract: It includes: a first lens having a convex shape on an object side and having positive refractive power; a second lens having a concave shape on an image plane side and having negative refractive power; a third lens having, in a paraxial region, one of a biconvex shape and a plano-convex shape that is provided with a convex surface facing toward the image plane side, the third lens having positive refractive power; a fourth lens having aspherical shapes on both surfaces thereof and having negative refractive power; and a fifth lens having aspherical shapes on both surfaces thereof, having a concave shape in a paraxial region on the image plane side, and having negative refractive power, the first to fifth lenses being arranged in order from the object side. The following conditional expressions are satisfied, where ?2 is an Abbe number of the second lens, and ?4 is an Abbe number of the fourth lens.

Abstract: An inventive semiconductor device includes a semiconductor layer, a source region provided in a surface layer portion of the semiconductor layer, a drain region provided in the surface of the semiconductor layer in spaced relation from the source region, a gate insulation film provided in opposed relation to a portion of the surface of the semiconductor layer present between the source region and the drain region, a gate electrode provided on the gate insulation film, and a drain-gate isolation portion provided between the drain region and the gate insulation film for isolating the drain region and the gate insulation film from each other in non-contact relation.

Abstract: An inventive semiconductor device includes a semiconductor layer, a source region provided in a surface layer portion of the semiconductor layer, a drain region provided in the surface of the semiconductor layer in spaced relation from the source region, a gate insulation film provided in opposed relation to a portion of the surface of the semiconductor layer present between the source region and the drain region, a gate electrode provided on the gate insulation film, and a drain-gate isolation portion provided between the drain region and the gate insulation film for isolating the drain region and the gate insulation film from each other in non-contact relation.

Abstract: An imaging lens includes an aperture stop, a first lens having positive refractive power, a second lens having negative refractive power, a third lens having positive refractive power, and a fourth lens having negative refractive power. Both surfaces of the first lens, both surfaces of the second lens, both surfaces of the third lens, and both surfaces of the fourth lens are formed as aspheric surfaces. The following condition expression (1), condition expression (2), and condition expression (3) are satisfied. ?1.09?f2/f??0.81??(1) ?1.62?f2/f1??1.42??(2) 0.65?f3/f?0.97??(3) in which f1: the focal length of the first lens f2: the focal length of the second lens f3: the focal length of the third lens f: the focal length of the lens whole system.

Abstract: An inventive semiconductor device includes a semiconductor layer, a source region provided in a surface layer portion of the semiconductor layer, a drain region provided in the surface of the semiconductor layer in spaced relation from the source region, a gate insulation film provided in opposed relation to a portion of the surface of the semiconductor layer present between the source region and the drain region, a gate electrode provided on the gate insulation film, and a drain-gate isolation portion provided between the drain region and the gate insulation film for isolating the drain region and the gate insulation film from each other in non-contact relation.

Abstract: An imaging lens includes an aperture stop, a first lens having positive refractive power, a second lens having negative refractive power, a third lens having positive refractive power, and a fourth lens having negative refractive power. Both surfaces of the first lens, both surfaces of the second lens, both surfaces of the third lens, and both surfaces of the fourth lens are formed as aspheric surfaces. The following condition expression (1), condition expression (2), and condition expression (3) are satisfied. ?1.09?f2/f??0.81??(1) ?1.62?f2/f1??1.42??(2) 0.65?f3/f?0.97??(3) in which f1: the focal length of the first lens f2: the focal length of the second lens f3: the focal length of the third lens f: the focal length of the lens whole system.

Abstract: A soft alumite is produced by forming an oxide film on the surface of an aluminum substrate. Printing is performed on a porous layer formed on the surface of the soft alumite while heating the soft alumite. Alternatively, printing is performed with a dye-based ink on a porous layer formed on the surface of the soft alumite.

Abstract: A soft alumite is produced by forming an oxide film on the surface of an aluminum substrate. Printing is performed on a porous layer formed on the surface of the soft alumite while heating the soft alumite. Alternatively, printing is performed with a dye-based ink on a porous layer formed on the surface of the soft alumite.

Abstract: A soft alumite is produced by forming an oxide film on the surface of an aluminum substrate. Printing is performed on a porous layer formed on the surface of the soft alumite while heating the soft alumite. Alternatively, printing is performed with a dye-based ink on a porous layer formed on the surface of the soft alumite.

Abstract: A soft alumite is produced by forming an oxide film on the surface of an aluminum substrate. Printing is performed on a porous layer formed on the surface of the soft alumite while heating the soft alumite. Alternatively, printing is performed with a dye-based ink on a porous layer formed on the surface of the soft alumite.

Abstract: A soft alumite is produced by forming an oxide film on the surface of an aluminum substrate. Printing is performed on a porous layer formed on the surface of the soft alumite while heating the soft alumite. Alternatively, printing is performed with a dye-based ink on a porous layer formed on the surface of the soft alumite.

Abstract: A soft alumite is produced by forming an oxide film on the surface of an aluminum substrate. Printing is performed on a porous layer formed on the surface of the soft alumite while heating the soft alumite. Alternatively, printing is performed with a dye-based ink on a porous layer formed on the surface of the soft alumite.