Patents by Inventor Shom Surendran PONOTH
Shom Surendran PONOTH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230388575Abstract: A device management server computer (“server”) has a media-only interface to a device and transmits a device identifier to the device over the interface, the device identifier having embedded network information sufficient to enable the device to establish a separate connection to the server over a communication link such as a wireless network. An application on the device retrieves the device identifier, extracts the network information, and uses the network information to establish the separate connection over the communication link. The device identifier can be part of an EDID provided over an HDMI interface. Instructions transmitted over the separate connection can be used to control transmission of media over the media-only interface.Type: ApplicationFiled: May 26, 2023Publication date: November 30, 2023Inventors: JASON CRAWFORD, SHOM SURENDRAN PONOTH, RAJKUMAR CHANDRASEKARAN, INDER PAUL BAJWA, PARIVALLAL GOPAL, TAMER ABUELSAAD, MARK HALL
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Patent number: 10396070Abstract: A fin-shaped field-effect transistor device is provided. The fin-shaped field effect transistor device may include a semiconductor substrate having a top and a bottom surface. The fin-shaped field effect transistor device may also include a fin structure disposed on the top surface of the semiconductor substrate, where the fin structure includes a first sidewall and a second sidewall opposite of the first sidewall. The first sidewall is adjacent to a first region of the top surface of the semiconductor substrate and the second sidewall is adjacent to a second region of the top surface of the semiconductor substrate. The fin-shaped field effect transistor device may also include an insulation layer disposed above the fin structure and the first and second regions of the top surface. The fin-shaped field effect transistor device may also include a conductor structure disposed above and adjacent to the insulation layer.Type: GrantFiled: February 22, 2018Date of Patent: August 27, 2019Assignee: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITEDInventors: Shom Surendran Ponoth, Changyok Park, Akira Ito
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Patent number: 10312365Abstract: Laterally diffused MOSFETs on fully depleted SOI are provided. A laterally diffused MOSFET includes a substrate and a first semiconductor layer disposed on the substrate. The laterally diffused MOSFET also includes a buried oxide layer disposed on the first semiconductor layer. A second semiconductor layer that comprises a first gate region, a drain region, and a source region is disposed on the buried oxide layer. The first gate region is positioned between the source and drain regions. A first shallow trench isolation is disposed between the drain region and the first semiconductor layer. A second gate region is disposed on the first semiconductor layer away from the second semiconductor layer and between the first shallow trench isolation and a second shallow trench isolation. A gate node is coupled to the first and second gate regions to apply a gate voltage to the first and second gate regions.Type: GrantFiled: February 2, 2018Date of Patent: June 4, 2019Assignee: Avago Technologies International Sales PTE. LimitedInventors: Qing Liu, Akira Ito, Shom Surendran Ponoth
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Publication number: 20180182753Abstract: A fin-shaped field-effect transistor device is provided. The fin-shaped field effect transistor device may include a semiconductor substrate having a top and a bottom surface. The fin-shaped field effect transistor device may also include a fin structure disposed on the top surface of the semiconductor substrate, where the fin structure includes a first sidewall and a second sidewall opposite of the first sidewall. The first sidewall is adjacent to a first region of the top surface of the semiconductor substrate and the second sidewall is adjacent to a second region of the top surface of the semiconductor substrate. The fin-shaped field effect transistor device may also include an insulation layer disposed above the fin structure and the first and second regions of the top surface. The fin-shaped field effect transistor device may also include a conductor structure disposed above and adjacent to the insulation layer.Type: ApplicationFiled: February 22, 2018Publication date: June 28, 2018Inventors: Shom Surendran PONOTH, Changyok PARK, Akira ITO
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Patent number: 9941271Abstract: A fin-shaped field-effect transistor device is provided. The fin-shaped field effect transistor device may include a semiconductor substrate having a top and a bottom surface. The fin-shaped field effect transistor device may also include a fin structure disposed on the top surface of the semiconductor substrate, where the fin structure includes a first sidewall and a second sidewall opposite of the first sidewall. The first sidewall is adjacent to a first region of the top surface of the semiconductor substrate and the second sidewall is adjacent to a second region of the top surface of the semiconductor substrate. The fin-shaped field effect transistor device may also include an insulation layer disposed above the fin structure and the first and second regions of the top surface. The fin-shaped field effect transistor device may also include a conductor structure disposed above and adjacent to the insulation layer.Type: GrantFiled: October 31, 2013Date of Patent: April 10, 2018Assignee: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.Inventors: Shom Surendran Ponoth, Changyok Park, Akira Ito
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Publication number: 20160233212Abstract: A capacitor structure in a semiconductor device includes a semiconductor substrate having a top surface and a bottom surface opposite the top surface, an isolation region having a top surface and a bottom surface, opposite the top surface, the bottom surface of the isolation region being disposed on the top surface of the semiconductor substrate. The capacitor structure also includes a gate terminal structure disposed on the top surface of the isolation region and a diffusion contact structure disposed on the top surface of the isolation region and arranged parallel to the gate terminal structure. In some aspects, the gate terminal structure is connected to a first contact node and the diffusion contact structure is connected to a second contact node, in which the first and second contact nodes form opposing nodes of the capacitor structure.Type: ApplicationFiled: April 13, 2016Publication date: August 11, 2016Inventors: Shom Surendran PONOTH, Changyok PARK, Guang-Jye SHIAU, Akira ITO
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Publication number: 20160190281Abstract: An MOS device with increased drain-source voltage (Vds) includes a source region and a drain region deposited on a substrate. A gate region includes an inner spacer that extends the drain region. The inner spacer is formed attached to an isolation spacer that isolates the drain region from the gate region. The inner spacer is configured to extend the drain region to modify an electric field in a portion of a conductive band of the MOS device.Type: ApplicationFiled: January 30, 2015Publication date: June 30, 2016Inventors: Qintao Zhang, Shom Surendran Ponoth, Akira Ito
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Patent number: 9379212Abstract: An MOS device with increased drain-source voltage (Vds) includes a source region and a drain region deposited on a substrate. A gate region includes an inner spacer that extends the drain region. The inner spacer is formed attached to an isolation spacer that isolates the drain region from the gate region. The inner spacer is configured to extend the drain region to modify an electric field in a portion of a conductive band of the MOS device.Type: GrantFiled: January 30, 2015Date of Patent: June 28, 2016Assignee: BROADCOM CORPORATIONInventors: Qintao Zhang, Shom Surendran Ponoth, Akira Ito
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Patent number: 9379236Abstract: A lateral double-diffused MOS (LDMOS) bulk finFET device for high-voltage operation includes a first-well region and two or more second-well regions formed on a substrate material and one or more non-well regions including substrate material. The non-well regions are configured to separate well regions of the second-well regions. A source structure is disposed on a first fin that is partially formed on the first-well region. A drain structure is disposed on a second fin that is formed on a last one of the second-well regions. One or more dummy regions are formed on the one or more non-well regions. The dummy regions are configured to provide additional depletion region flow paths including vertical flow paths for charge carriers to enable the high-voltage operation.Type: GrantFiled: June 19, 2014Date of Patent: June 28, 2016Assignee: Broadcom CorporationInventors: Shom Surendran Ponoth, Akira Ito
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Patent number: 9337188Abstract: A capacitor structure in a semiconductor device includes a semiconductor substrate having a top surface and a bottom surface opposite the top surface, an isolation region having a top surface and a bottom surface, opposite the top surface, the bottom surface of the isolation region being disposed on the top surface of the semiconductor substrate. The capacitor structure also includes a gate terminal structure disposed on the top surface of the isolation region and a diffusion contact structure disposed on the top surface of the isolation region and arranged parallel to the gate terminal structure. In some aspects, the gate terminal structure is connected to a first contact node and the diffusion contact structure is connected to a second contact node, in which the first and second contact nodes form opposing nodes of the capacitor structure.Type: GrantFiled: November 5, 2013Date of Patent: May 10, 2016Assignee: Broadcom CorporationInventors: Shom Surendran Ponoth, Changyok Park, Guang-Jye Shiau, Akira Ito
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Publication number: 20160064417Abstract: A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed.Type: ApplicationFiled: November 5, 2015Publication date: March 3, 2016Inventors: Shom Surendran PONOTH, Changyok PARK
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Publication number: 20150357462Abstract: A lateral double-diffused MOS (LDMOS) bulk finFET device for high-voltage operation includes a first-well region and two or more second-well regions formed on a substrate material and one or more non-well regions including substrate material. The non-well regions are configured to separate well regions of the second-well regions. A source structure is disposed on a first fin that is partially formed on the first-well region. A drain structure is disposed on a second fin that is formed on a last one of the second-well regions. One or more dummy regions are formed on the one or more non-well regions. The dummy regions are configured to provide additional depletion region flow paths including vertical flow paths for charge carriers to enable the high-voltage operation.Type: ApplicationFiled: June 19, 2014Publication date: December 10, 2015Inventors: Shom Surendran PONOTH, Akira Ito
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Patent number: 9209202Abstract: A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed.Type: GrantFiled: February 27, 2014Date of Patent: December 8, 2015Assignee: Broadcom CorporationInventors: Shom Surendran Ponoth, Changyok Park
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Patent number: 9165936Abstract: An anti-fuse device for fin field-effect transistor (finFET) technology includes a dummy gate, an electrically conductive contact, and a diffusion contact. The dummy gate is formed over an end-corner of a fin. The electrically conductive contact is disposed on a portion of the dummy gate and can be used as a first electrode of the device. The diffusion contact is disposed over the fin and can be used as a second electrode of the device.Type: GrantFiled: February 5, 2014Date of Patent: October 20, 2015Assignee: BROADCOM CORPORATIONInventors: Shom Surendran Ponoth, Akira Ito, Changyok Park
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Publication number: 20150228668Abstract: A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed.Type: ApplicationFiled: February 27, 2014Publication date: August 13, 2015Applicant: BROADCOM CORPORATIONInventors: Shom Surendran Ponoth, Changyok Park
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Publication number: 20150200196Abstract: An anti-fuse device for fin field-effect transistor (finFET) technology includes a dummy gate, an electrically conductive contact, and a diffusion contact. The dummy gate is formed over an end-corner of a fin. The electrically conductive contact is disposed on a portion of the dummy gate and can be used as a first electrode of the device. The diffusion contact is disposed over the fin and can be used as a second electrode of the device.Type: ApplicationFiled: February 5, 2014Publication date: July 16, 2015Applicant: BROADCOM CORPORATIONInventors: Shom Surendran Ponoth, Akira Ito, Changyok Park
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Publication number: 20150108557Abstract: A capacitor structure in a semiconductor device includes a semiconductor substrate having a top surface and a bottom surface opposite the top surface, an isolation region having a top surface and a bottom surface, opposite the top surface, the bottom surface of the isolation region being disposed on the top surface of the semiconductor substrate. The capacitor structure also includes a gate terminal structure disposed on the top surface of the isolation region and a diffusion contact structure disposed on the top surface of the isolation region and arranged parallel to the gate terminal structure. In some aspects, the gate terminal structure is connected to a first contact node and the diffusion contact structure is connected to a second contact node, in which the first and second contact nodes form opposing nodes of the capacitor structure.Type: ApplicationFiled: November 5, 2013Publication date: April 23, 2015Applicant: Broadcom CorporationInventors: Shom Surendran PONOTH, Changyok PARK, Guang-Jye SHIAU, Akira ITO
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Publication number: 20150097220Abstract: A fin-shaped field-effect transistor device is provided. The fin-shaped field effect transistor device may include a semiconductor substrate having a top and a bottom surface. The fin-shaped field effect transistor device may also include a fin structure disposed on the top surface of the semiconductor substrate, where the fin structure includes a first sidewall and a second sidewall opposite of the first sidewall. The first sidewall is adjacent to a first region of the top surface of the semiconductor substrate and the second sidewall is adjacent to a second region of the top surface of the semiconductor substrate. The fin-shaped field effect transistor device may also include an insulation layer disposed above the fin structure and the first and second regions of the top surface. The fin-shaped field effect transistor device may also include a conductor structure disposed above and adjacent to the insulation layer.Type: ApplicationFiled: October 31, 2013Publication date: April 9, 2015Applicant: BROADCOM CORPORATIONInventors: Shom Surendran PONOTH, Changyok Park, Akira Ito