Abstract: A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.

Abstract: A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.

Abstract: A sensor includes first and second focus detection units. Each of the first and second focus detection units includes a photoelectric converter arranged in a semiconductor substrate, a first light blocking portion arranged in a first layer above the semiconductor substrate, and a second light blocking portion arranged in a second layer above the first layer, orthogonal projection of the photoelectric converter onto a face of the semiconductor substrate has a first end and a second end which are located on opposite sides, orthogonal projection of the first light blocking portion onto the face covers the first end, and orthogonal projection of the second light blocking portion onto the face covers the second end.