Abstract: This automatic processing device for fabricating a sample piece from a sample by irradiating the sample with a charged particle beam is provided with: a structural information acquiring unit which acquires structural information indicating the structure of the sample before processing; a processing termination position acquiring unit which acquires termination position specifying information specifying a processing termination position corresponding to the structure of the sample; an image acquiring unit which acquires a processed surface image in which a processed surface appearing at the position at which the sample has been irradiated by the charged particle beam is captured; and a determining unit which determines whether the position of the processing by the charged particle beam has reached the termination position, on the basis of a comparison between the structural information acquired by the structural information acquiring unit and the processed surface image acquired by the image acquiring unit.

Abstract: The invention provides a method of burying trenches of a sample comprises at least the steps of: from the sample having the trenches extending from one surface into a depth direction, cutting a sample piece of a small part including the trenches; and by irradiating an electron beam toward the inside of the trenches from a side surface extending along the depth direction of the sample piece and simultaneously injecting a compound gas into the inside of the trenches from openings on the side of the one surface of the trench, decomposing the compound gas with secondary electrons generated by irradiation of the electron beam and depositing constituents of the compound gas within the trenches. Therefore, the method can bury the trenches uniformly without generating cavities within the trenches even if the trenches of the sample piece have a high aspect ratio deep in a depth direction.

Abstract: Disclosed are a charged particle beam apparatus wherein the charged particle beam apparatus can efficiently performs finish processing of a sample and acquisition of a high-precision SEM image of a processing surface of the sample in a short time, and a sample processing observation method using the same. The charged particle beam apparatus includes: a gallium ion beam column radiating a gallium ion beam toward a sample to form a cross-section of the sample; an electron beam column having a semi-in-lens type objective lens and radiating an electron beam toward the sample; a gas ion beam column radiating a gas ion beam toward the sample to perform finish processing of the cross-section of the sample, wherein the gas ion beam has a beam diameter larger than a maximum diameter of the cross-section of the sample.

Abstract: This automatic processing device for fabricating a sample piece from a sample by irradiating the sample with a charged particle beam is provided with: a structural information acquiring unit which acquires structural information indicating the structure of the sample before processing; a processing termination position acquiring unit which acquires termination position specifying information specifying a processing termination position corresponding to the structure of the sample; an image acquiring unit which acquires a processed surface image in which a processed surface appearing at the position at which the sample has been irradiated by the charged particle beam is captured; and a determining unit which determines whether the position of the processing by the charged particle beam has reached the termination position, on the basis of a comparison between the structural information acquired by the structural information acquiring unit and the processed surface image acquired by the image acquiring unit.

Abstract: Disclosed are a charged particle beam apparatus wherein the charged particle beam apparatus can efficiently performs finish processing of a sample and acquisition of a high-precision SEM image of a processing surface of the sample in a short time, and a sample processing observation method using the same. The charged particle beam apparatus includes: a gallium ion beam column radiating a gallium ion beam toward a sample to form a cross-section of the sample; an electron beam column having a semi-in-lens type objective lens and radiating an electron beam toward the sample; a gas ion beam column radiating a gas ion beam toward the sample to perform finish processing of the cross-section of the sample, wherein the gas ion beam has a beam diameter larger than a maximum diameter of the cross-section of the sample.

Abstract: The invention provides a method of burying trenches of a sample comprises at least the steps of: from the sample having the trenches extending from one surface into a depth direction, cutting a sample piece of a small part including the trenches; and by irradiating an electron beam toward the inside of the trenches from a side surface extending along the depth direction of the sample piece and simultaneously injecting a compound gas into the inside of the trenches from openings on the side of the one surface of the trench, decomposing the compound gas with secondary electrons generated by irradiation of the electron beam and depositing constituents of the compound gas within the trenches. Therefore, the method can bury the trenches uniformly without generating cavities within the trenches even if the trenches of the sample piece have a high aspect ratio deep in a depth direction.

Abstract: A charged particle beam apparatus includes a stage for fixing a sample, a driving mechanism for driving the stage, a focused ion beam column, an electron beam column, a detector that detects a secondary charged particle emitted from the sample irradiated with a charged particle beam, a gas supplying device that supplies gas for forming a deposition film on a surface of the sample, and a control device that generates image data indicating the position distribution of the secondary charged particle detected by the detector. The control device irradiates the sample with the electron beam prior to irradiating the sample with a focused ion beam, recognizes an alignment mark provided in the sample in the image data by the electron beam, and performs positioning of an irradiation region of the sample using the alignment mark.

Abstract: A charged particle beam apparatus including a column irradiating a sample with a charged particle beam, a detector detecting a secondary particle emitted from the sample, an image data generating section generating image data indicating two-dimensional distribution of an amount of the secondary particle detected by the detector, and a controller that respectively sets first and second position adjustment irradiation frames for first and second beam condition on a surface of the sample in the image data, form a first and second irradiation traces by respectively irradiating the first and second position adjustment irradiation frames with the charged particle beams of the first and second beam conditions, correct a position of the second processing irradiation frame, based on a position displacement amount between a predetermined position of the first irradiation trace and a predetermined position of the second irradiation trace.

Abstract: A charged particle beam apparatus includes a stage for fixing a sample, a driving mechanism for driving the stage, a focused ion beam column, an electron beam column, a detector that detects a secondary charged particle emitted from the sample irradiated with a charged particle beam, a gas supplying device that supplies gas for forming a deposition film on a surface of the sample, and a control device that generates image data indicating the position distribution of the secondary charged particle detected by the detector. The control device irradiates the sample with the electron beam prior to irradiating the sample with a focused ion beam, recognizes an alignment mark provided in the sample in the image data by the electron beam, and performs positioning of an irradiation region of the sample using the alignment mark.

Abstract: A focused ion beam system includes a focused ion beam irradiation mechanism which irradiates a sample, on which a protective film is formed, with a focused ion beam from above the sample, a processing control unit which performs a removal process on both sides of a region to be a thin piece portion of the sample by the focused ion beam and sequentially forms observation surfaces parallel to an irradiation direction of the focused ion beam so as to achieve the thin piece portion, and an observation surface image generation unit which generates an observation surface image. The processing control unit terminates the removal process when a height of the protective film in the irradiation direction of the focused ion beam becomes a predetermined threshold value or less in the observation surface image.

Abstract: A composite charged particle beam apparatus includes a FIB column for irradiating a thin sample with a FIB and a GIB column for irradiating the thin sample with a GIB. The thin sample is placed on a sample stage, and a tilt unit tilts the thin sample about a tilt axis of the sample stage, the tilt axis being orthogonal to the FIB irradiation axis and being located inside a plane formed by the FIB irradiation axis and the GIB irradiation axis. A tilt sample holder is mounted on the sample stage and fixes the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to the GIB irradiation axis and the azimuth angle of the GIB column can be changed by rotation of the sample stage.

Abstract: A charged particle beam apparatus including a column irradiating a sample with a charged particle beam, a detector detecting a secondary particle emitted from the sample, an image data generating section generating image data indicating two-dimensional distribution of an amount of the secondary particle detected by the detector, and a controller that respectively sets first and second position adjustment irradiation frames for first and second beam condition on a surface of the sample in the image data, form a first and second irradiation traces by respectively irradiating the first and second position adjustment irradiation frames with the charged particle beams of the first and second beam conditions, correct a position of the second processing irradiation frame, based on a position displacement amount between a predetermined position of the first irradiation trace and a predetermined position of the second irradiation trace.

Abstract: A focused ion beam system includes a focused ion beam irradiation mechanism which irradiates a sample, on which a protective film is formed, with a focused ion beam from above the sample, a processing control unit which performs a removal process on both sides of a region to be a thin piece portion of the sample by the focused ion beam and sequentially forms observation surfaces parallel to an irradiation direction of the focused ion beam so as to achieve the thin piece portion, and an observation surface image generation unit which generates an observation surface image. The processing control unit terminates the removal process when a height of the protective film in the irradiation direction of the focused ion beam becomes a predetermined threshold value or less in the observation surface image.

Abstract: A composite charged particle beam apparatus includes: a FIB column irradiating a thin sample with FIB; a GIB column irradiating the thin sample with GIB; a sample stage on which the thin sample is placed; a first tilt unit for tilting the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an FIB irradiation axis and being located inside a first plane formed by the FIB irradiation axis and a GIB irradiation axis; and a second tilt unit for tilting the thin sample about an axis which is orthogonal to the FIB irradiation axis and the first tilt axis.