Abstract: A substrate processing apparatus that dries a liquid adhering to a substrate by using a processing fluid in a supercritical state, includes: a processing container in which the substrate is accommodated; a plurality of pipes configured to allow the processing fluid to flow to and from the processing container therethrough; a first fluid heating device configured to heat a first pipe that supplies the processing fluid to an interior of the processing container among the plurality of pipes; and a second fluid heating device configured to heat a second pipe that discharges the processing fluid from the interior of the processing container among the plurality of pipes.

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

Abstract: A substrate processing apparatus is configured to dry a substrate by replacing a liquid film formed on a top surface of the substrate, which is horizontally held, with a supercritical fluid. The substrate processing apparatus includes a pressure vessel, a cover body and a supporting body. The pressure vessel has therein a drying chamber for the substrate. The cover body is configured to close an opening of the drying chamber. The supporting body is configured to support the substrate horizontally within the drying chamber. The supporting body is fixed to the drying chamber.

Abstract: A substrate processing apparatus includes multiple first substrate processing devices, one or more second substrate processing devices and a transfer unit. Each of the multiple first substrate processing devices is configured to process a substrate one by one. The one or more second substrate processing devices are configured to simultaneously process multiple substrates, which are processed in the multiple first substrate processing devices. The transfer unit is configured to simultaneously carry the multiple substrates, which are processed in the multiple first substrate processing devices, into a same second substrate processing device.

Abstract: A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

Abstract: A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.

Abstract: A resin composition includes an insulating filler having a specific gravity of 6.0 or higher; and a resin having a polar group, in which a content of the insulating filler having a specific gravity of 6.0 or higher is 50% by volume or more with respect to a total solid content of the resin composition.

Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

Abstract: A substrate processing apparatus includes a transfer block in which a transfer device configured to transfer a substrate is placed, and a processing block provided adjacent to the transfer block. The processing block includes a liquid film forming unit configured to form a liquid film on a top surface of the substrate which is held horizontally, and a drying unit configured to replace the liquid film with a supercritical fluid to dry the substrate. The drying unit includes a pressure vessel having therein a drying chamber for the substrate, a cover body configured to close an opening of the drying chamber, and a supporting body configured to support the substrate horizontally in the drying chamber. The supporting body is fixed to the drying chamber. The transfer device advances into the drying chamber through the opening of the drying chamber while holding horizontally the substrate having the liquid film thereon.

Abstract: A substrate processing apparatus is configured to dry a substrate by replacing a liquid film formed on a top surface of the substrate, which is horizontally held, with a supercritical fluid. The substrate processing apparatus includes a pressure vessel, a cover body and a supporting body. The pressure vessel has therein a drying chamber for the substrate. The cover body is configured to close an opening of the drying chamber. The supporting body is configured to support the substrate horizontally within the drying chamber. The supporting body is fixed to the drying chamber.

Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

Abstract: A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holder, a top plate portion, a gas supply unit, and an arm. The substrate holder holds a substrate. The top plate is installed to face the substrate held on the substrate holder, and has a through hole formed therethrough at a position facing the center of the substrate. The gas supply supplies an atmosphere adjustment gas to a space between the substrate holder and the top plate. The processing liquid nozzle ejects a liquid to the substrate. The arm holds the processing liquid nozzle and moves the processing liquid nozzle between a processing position where the processing liquid is ejected from the processing liquid nozzle through the through hole and a standby position outside the substrate.

Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

Abstract: A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.

Abstract: A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holder, a top plate portion, a gas supply unit, and an arm. The substrate holder holds a substrate. The top plate is installed to face the substrate held on the substrate holder, and has a through hole formed therethrough at a position facing the center of the substrate. The gas supply supplies an atmosphere adjustment gas to a space between the substrate holder and the top plate. The processing liquid nozzle ejects a liquid to the substrate. The arm holds the processing liquid nozzle and moves the processing liquid nozzle between a processing position where the processing liquid is ejected from the processing liquid nozzle through the through hole and a standby position outside the substrate.

Abstract: A substrate processing apparatus according to the present disclosure includes: a substrate processing unit; a partition wall; and a liquid supply source. The substrate processing unit includes a substrate holder and performs a liquid processing on a substrate. The partition wall serves as a partition wall between a first space from a carry-in/out port through which the substrate is carried in/out to the substrate processing unit, and a second space other than the first space. The liquid supply source is provided in the second space and supplies a processing liquid to the substrate.