Abstract: A dehumidifying element includes a plurality of sheets that have moisture adsorption and desorption properties and that are stacked on top of each another. At least some of the sheets each have an irregular shape. The sheets each contain a hygroscopic agent having properties of a re-moistening-type glue that exhibits adherence when adsorbing moisture and that solidifies when being dried. The sheets are bonded to each other by the hygroscopic agent.

Abstract: The signal transmission paths are transmission path pairs 22, 24 located spaced apart in the arrangement direction of the signal transmission paths 22, 24, the transmission path pairs 22, 24 have two types of pairs, straight pairs 22 and cross pairs 24, the straight pairs 22 and the cross pairs 24 are alternately disposed in the arrangement direction, the signal transmission paths arranged in the arrangement direction form signal transmission path rows, a plurality of the signal transmission path rows are provided, and of two adjacent signal transmission path rows, at least a part of the transmission path pairs 22, 24 of one signal transmission path row in the height direction is offset in the arrangement direction with respect to the transmission path pairs 22, 24 of the other signal transmission path row.

Abstract: In an electrical connector wherein signal transmission paths 53 have signal connecting portions 53 C soldered to signal circuit units on a circuit board, ground members 54, 55 have ground connecting portions 54C, 55C soldered to ground circuit units on the circuit board, and the ground connecting portions 54C, 55C are positioned in the arrangement direction of the signal transmission paths 53 between the signal connecting portions 53C of adjacent signal transmission paths, a width range WG between the opposite end locations of the ground connecting portions 54C, 55C of the ground members 54, 55 in the width direction, which is parallel to the mounting surface of the circuit board and perpendicular to the arrangement direction, extends beyond the width range WS of the signal connecting portions 53C of the signal transmission paths 53.

Abstract: A method of obtaining a shared prediction model is provided. The method includes: obtaining a prediction model as a neural network; converting each negative numerical value in a plurality of parameters included in the prediction model to a positive numerical value to obtain a converted prediction model; and sharing the converted prediction model by a secret sharing method to obtain shared prediction models while concealing an input data.

Abstract: A pipe joint includes: a sealing member, having an annular shape, which is provided between the outer circumferential surface of a spigot and an inner circumferential surface of a socket; a pushing ring to push the sealing member into the socket, the pushing ring being fitted onto the spigot; and a separation preventive member configured to engage with the spigot protrusion part in a pipe-axial direction to prevent a separation of the spigot from the socket. The separation preventive member is provided between an inner circumferential surface of the pushing ring and the outer circumferential surface of the spigot. The sealing member is provided along an outer circumferential surface of the spigot protrusion part and includes a compression part. The compression part is compressed in a pipe-radial and is located, in the socket, upstream of the spigot protrusion part in an insertion direction in which the spigot is inserted.

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a control part configured to control the solid-state imaging element. The pixel cells each include an avalanche photodiode, a floating diffusion part configured to accumulate electric charges, a transfer transistor connecting a cathode of the avalanche photodiode and the floating diffusion part, and a reset transistor for resetting electric charges accumulated in the floating diffusion part. The control part controls the reset transistor to discharge electric charges exceeding a predetermined electric charge amount, of electric charges accumulated in the floating diffusion part from the cathode of the avalanche photodiode via the transfer transistor.

Abstract: An imaging device including a semiconductor substrate that includes a first impurity region; a photoelectric converter that is coupled to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal coupled to the first impurity region; voltage supply circuitry coupled to the second terminal; a first transistor including the first impurity region as a source or a drain; and control circuitry. The control circuitry is programmed to cause the voltage supply circuitry to supply a first voltage in a first period, and to cause the voltage supply circuitry to supply a second voltage different from the first voltage in a second period continuous to the first period, the first transistor being in on-state in the first period, the first transistor being in off-state in the second period.

Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.

Abstract: An inference apparatus makes an inference with respect to a phenomenon, the inference apparatus includes: a question acquirer configured to acquire a question related to the phenomenon; a question classifier configured to classify whether the question is a qualitative question or a quantitative question; a sensor classifier configured to classify whether sensor data is acquirable or not when the question is the quantitative question; a determiner configured to determine the sensor data as data to be used for the inference when the sensor data is acquirable and configured to determine input data by a user as the data to be used for the inference when the sensor data is unacquirable; and an inferrer configured to make the inference corresponding to the phenomenon using the data determined by the determiner.

Abstract: An imaging device includes: one or more pixels, each of the one or more pixels including a photoelectric converter including a first electrode, a second electrode, a photoelectric conversion layer that converts incident light into a signal charge, and a blocking layer; and a charge accumulation region that is coupled to the second electrode, and that accumulates the signal charge. An energy barrier of the blocking layer against migration of a charge having an opposite polarity to a polarity of the signal charge from the second electrode to the photoelectric conversion layer is larger than or equal to 1.8 eV, and an energy barrier of the blocking layer against migration of the charge from the photoelectric conversion layer to the second electrode is smaller than or equal to 1.6 eV.

Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

Abstract: An imaging device including: a semiconductor substrate having a first and second surface opposite to the first surface; a microlens located closer to the first surface than the second surface; a first photoelectric converter located between the first surface and the microlens, where the first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges; and a signal detecting section located in the semiconductor substrate, the signal detecting section being configured to output a signal corresponding to the electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer and above the signal detecting section.

Abstract: An imaging device includes a semiconductor substrate having a first surface; a microlens located above the first surface of the semiconductor substrate; and one or more photoelectric converters located between the first surface of the semiconductor substrate and the microlens, each of the one or more photoelectric converters including a first electrode, a second electrode located closer to the microlens than the first electrode is, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges, wherein a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer of a first photoelectric converter, the first photoelectric converter being located closest to the first surface of the semiconductor substrate among the one or more photoelectric converters.

Abstract: An electronic prepared slide includes: an image sensor that has a light receiving surface and receives, on the light receiving surface, light that has passed through a specimen disposed above the light receiving surface; and a removable nonvolatile transparent film that is disposed on the light receiving surface and seals the light receiving surface.

Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

Abstract: The first terminals have contact arm portions extending in a rectilinear manner in the direction of connector plugging and unplugging; the second terminals have convex contact point portions contactable with an intermediate portion of the contact arm portions in the same direction. When the stub portions of the contact arm portions are divided into a free end side range and a proximal end side range such that the center point of said stub portions in the direction of plugging and unplugging forms a boundary, in the arranged state of the first terminals, impedance at arbitrary locations in the direction of plugging and unplugging within the free end side range is larger than impedance at arbitrary locations in the plugging direction within the proximal end side range.

Abstract: An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.

Abstract: In an information processing method, a query including a first encrypted feature value provided with confidential information unique to a user is received. The first encrypted feature value is generated by encrypting a first feature value calculated from privacy data of the user by using inner product encryption. A plurality of inner product values are acquired by computing an inner product of the first encrypted feature value and each of a plurality of second encrypted feature values. Privacy data of a plurality of pieces of privacy data having an inner product value of the first encrypted feature value and a second encrypted feature value with an encrypted reference feature value calculated from the privacy data being equal to or smaller than a predetermined threshold is transmitted. A secret key of the user is identified by using the confidential information when an unauthorized access is detected, and identification information is outputted.

Abstract: The first terminals have contact arm portions extending in a rectilinear manner in the direction of connector plugging and unplugging; the second terminals have convex contact point portions contactable with an intermediate portion of the contact arm portions in the same direction. When the stub portions of the contact arm portions are divided into a free end side range and a proximal end side range such that the center point of said stub portions in the direction of plugging and unplugging forms a boundary, in the arranged state of the first terminals, impedance at arbitrary locations in the direction of plugging and unplugging within the free end side range is larger than impedance at arbitrary locations in the plugging direction within the proximal end side range.