Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Abstract: A plasma processing apparatus 1 includes a central inlet unit that introduces a processing gas containing at least one of an Ar gas, a He gas and an etching gas toward a central portion of a wafer W; a peripheral inlet unit 61 that introduces the processing gas toward a periphery portion thereof; a flow rate adjusting unit that adjusts a flow rate of the processing gas introduced toward the central portion thereof from the central inlet unit 55 and a flow rate of the processing gas introduced toward the periphery portion thereof from the peripheral inlet unit 61; and a controller 49 that controls the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the He gas to the Ar gas contained in the processing gas is equal to or higher than a preset value.

Abstract: There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Abstract: A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line.

Abstract: There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

Abstract: There is provided a manufacturing method for a microlens array including a multiple number of microlenses protruded in a substantially hemispherical shape from a surface. The manufacturing method includes forming a resist layer for forming a shape of the microlenses on an organic film layer serving as a material layer of the microlenses; and etching the formed resist layer and the organic film layer by using a mixed gas including hydrogen-containing molecules and fluorine-containing molecules.