Abstract: An evaluation device includes: a processing container that has an intake port and an exhaust port; a microorganism supply device that floats microorganisms in the air inside the processing container; a light source that irradiates the microorganisms floating in the air inside the processing container with ultraviolet rays while the intake port and the exhaust port are in a state of being closed; and a microorganism recovery device that is connected to the exhaust port. The microorganism recovery device discharges air that has a volume larger than the capacity of the inside of the processing container through the exhaust port while introducing air that does not contain microorganisms to be evaluated into the inside of the processing container through the intake port after the irradiation with the ultraviolet rays and recovers the microorganisms contained in the air that is discharged.

Abstract: An evaluation device includes: a processing container that has an intake port and an exhaust port; a microorganism supply device that floats microorganisms in the air inside the processing container; a light source that irradiates the microorganisms floating in the air inside the processing container with ultraviolet rays while the intake port and the exhaust port are in a state of being closed; and a microorganism recovery device that is connected to the exhaust port. The microorganism recovery device discharges air that has a volume larger than the capacity of the inside of the processing container through the exhaust port while introducing air that does not contain microorganisms to be evaluated into the inside of the processing container through the intake port after the irradiation with the ultraviolet rays and recovers the microorganisms contained in the air that is discharged.

Abstract: A transistor that offers a high dielectric breakdown voltage of a gate insulating film with limited reduction of the current flowing between drain and source electrodes. The transistor has a semiconductor layer, a gate insulating film on the semiconductor layer, a gate electrode on the gate insulating film, and a source electrode and a drain electrode disposed on the semiconductor layer with the gate electrode therebetween. The concentration of the impurities contained in the gate insulating film is on a downward gradient starting at the surface of the gate insulating film on the semiconductor layer side and ending at the surface of the gate insulating film on the gate electrode side.