Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.

Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.

Abstract: The invention aims at reducing the movement of an operator to improve the operability. A vacuum chamber door is provided on the front side of a vacuum chamber, and sample holders are connected to the vacuum chamber door through a rotation shaft and a disk. An ion source is detachably mounted on the right side of the vacuum chamber, and a control panel is provided on the left side of the vacuum chamber. The vacuum chamber door is supported by a linearly reciprocally-moving mechanism so as to be drawn away from the vacuum chamber. An operation surface of the vacuum chamber door and an operation surface of the control panel are disposed substantially in a common plane.

Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.

Abstract: An ion beam processing apparatus which processes specimens held by a specimen holder in a vacuum vessel by irradiating the specimen with an ion beam. The apparatus includes a raising/lowering device for raising and lowering the specimen holder. When replacing the processed specimen by an unprocessed specimen, the specimen holder is raised and lowered by the raising/lowering device to effect specimen replacement. Due to this arrangement, specimen replacement can be performed automatically without opening the vacuum vessel to atmospheric air thereby increasing productivity.