Abstract: A vertical transistor structure includes a substrate, a source, a first gate, a first insulating layer, a second gate, a gate insulating layer, a drain, a second insulating layer, and a semiconductor channel layer. The source is configured on the substrate. The first gate is configured on the source and has at least one first through hole. The first insulating layer is between the first gate and the source. The second gate is configured on the first gate and has at least one second through hole. The gate insulating layer is between the first and second gates and has at least one third through hole. The first, second, and third through holes are communicated with one another. The drain is configured on the second gate. The second insulating layer is configured between the second gate and the drain. The semiconductor channel layer fills the first, second, and third through holes.

Abstract: A vertical thin film transistor and a method for manufacturing the same and a display device including the vertical thin film transistor and a method for manufacturing the same are disclosed. The vertical thin film transistor is applied to a substrate. In the present invention, a gate layer of the vertical thin film transistor is formed to have a plurality of concentric annular structures and the adjacent concentric annular structures are linked. By the concentric annular structures of the gate electrode layer, resistance to stress and an on-state current of the vertical thin film transistor can be increased.

Abstract: An organic light emitting diode device is disclosed. The organic light emitting diode device includes a substrate, a first electrode layer, a first insulating layer, at least one controlling electrode layer, a second insulating layer, at least one light emitting layer, a third insulating layer, and a second electrode layer. The first electrode layer is formed on the substrate and includes a first area and a second area adjacent to the first area. The first insulating layer, the controlling electrode layer, and the second insulating layer are sequentially formed on the first area. The light emitting layer is formed on the second area. The second electrode layer is formed on the light emitting layer. In the present invention, the controlling electrode layer controls a recombination region of electron-hole pair so as to achieve an objective of adjusting a color temperature.

Abstract: An organic light emitting diode device is disclosed. The organic light emitting diode device includes a substrate, a first electrode layer, a first insulating layer, at least one controlling electrode layer, a second insulating layer, at least one light emitting layer, a third insulating layer, and a second electrode layer. The first electrode layer is formed on the substrate and includes a first area and a second area adjacent to the first area. The first insulating layer, the controlling electrode layer, and the second insulating layer are sequentially formed on the first area. The light emitting layer is formed on the second area. The second electrode layer is formed on the light emitting layer. In the present invention, the controlling electrode layer controls a recombination region of electron-hole pair so as to achieve an objective of adjusting a color temperature.

Abstract: A cholesteric liquid crystal display device is disclosed. The cholesteric liquid crystal display device includes a substrate, a light absorbing layer, and a cholesteric liquid crystal layer. The cholesteric liquid crystal layer includes plural rows of left-handed cholesteric liquid crystals and plural rows of right-handed cholesteric liquid crystals which are arranged alternately. The left-handed cholesteric liquid crystals and the right-handed cholesteric liquid crystals respectively reflect left-handed light and right-handed light in the cholesteric liquid crystal display device of the present invention, whereby both eyes of an observer can see different images and thus a 3D effect is formed.

Abstract: A vertical transistor structure includes a substrate, a source, a first gate, a first insulating layer, a second gate, a gate insulating layer, a drain, a second insulating layer, and a semiconductor channel layer. The source is configured on the substrate. The first gate is configured on the source and has at least one first through hole. The first insulating layer is between the first gate and the source. The second gate is configured on the first gate and has at least one second through hole. The gate insulating layer is between the first and second gates and has at least one third through hole. The first, second, and third through holes are communicated with one another. The drain is configured on the second gate. The second insulating layer is configured between the second gate and the drain. The semiconductor channel layer fills the first, second, and third through holes.

Abstract: A vertical thin film transistor and a method for manufacturing the same and a display device including the vertical thin film transistor and a method for manufacturing the same are disclosed. The vertical thin film transistor is applied to a substrate. In the present invention, a gate layer of the vertical thin film transistor is formed to have a plurality of concentric annular structures and the adjacent concentric annular structures are linked. By the concentric annular structures of the gate electrode layer, resistance to stress and an on-state current of the vertical thin film transistor can be increased.